46results about How to "Improve quantum conversion efficiency" patented technology

The invention relates to a BiVO4 nano photoelectrode and application thereof in the aspect of hydrogen production from water splitting, which can increase photocurrent and greatly improve the efficiency of quantum conversion. The BiVO4 nano photoelectrode comprises a BiVO4 nano-pore thin film, and BiVO4 is doped with metal cation, wherein the metal cation is one or a mixture with an arbitrary proportion of more than two of Sr<2+>, Ba<2+>, Cr<6+> and W<6+> by arbitrary proportion. As an improvement of the invention, the surface of the BiVO4 nano-pore thin film is also modified with a catalyst, wherein the catalyst is one or a mixture with an arbitrary proportion of more than two of the oxides of the hydroxides of Rh, W, Mo, Co, Fe, Mn and Ni. Compared with a pure BiVO4 electrode, the quantum conversion efficiency of the invention is greatly increased and reaches 70 percent within a wavelength range of 360-450nm, and a photoresponse range is broadened to 510nm.

The invention provides an organic dye which uses five-membered heterocyclic ring, derivatives thereof and a dye-sensitized solar cell prepared by the organic dye. The dye uses the five-membered heterocyclic ring or the derivatives thereof as a Pi unit, uses substituted triarylamine as an electron donor, uses cyanoacetic acid structure as an electron acceptor, and belongs to molecule of D-Pi-A structure. The dye molecule belongs to pure organic compounds, the structure of the materials is simple and is easy to be obtained; expensive materials of metal of Ru and purifying agent of polydextrose do not need to use, the compound yield is higher, so the total yield is between 40 percent and 70 percent; besides, the performance of spectral absorption and molar extinction coefficient and the like of the dye are excellent; and the peak value of the spectral absorption is over 550nm at the most, the molar extinction coefficient is over 48000M<-1>cm<-1>, the peak value and the coefficient are more than the Ru dye, therefore, the dye has wider absorption range to the sunlight. The dye-sensitized solar cell prepared by the organic dye has the maximum of quantum conversion efficiency of 97 percent and the highest photoelectric conversion efficiency of more than 8.0 percent.

The invention relates to the production of light-amplifying optical material. Liquid reactant is atomized into droplets using a high velocity gas. The droplets are subsequently introduced into a flame. Reactants are oxidized in the flame and condensed by forming small particles. At least a fraction of said particles is collected and fused to form optical waveguide material, which is subsequently drawn to form an optical waveguide. According to the invention, the velocity of the atomizing gas stream is in the order of the velocity of sound. The high velocity enhances atomization and increases reaction rates in the flame. The residence times are reduced to such a degree that unwanted phase transformations in the produced particles are substantially minimized. Consequently, very homogeneous material is produced. Especially, in the production of erbium-doped silica, low percentage of clustered erbium ions is achieved.

An all solid state mid-infrared optical parametric oscillator comprises a 1.5 mum narrow linewidth laser diode (hereinafter referred to as LD) with pigtail output, a focusing coupling system, a first plane mirror, Er:YAG laser crystal, a saturable absorber Cr:ZnSe, a polarizer, a quartz plate etalon, a second plane mirror, MgO:PPLN nonlinear periodically poled crystal and a third plane mirror which are successively arranged along the laser output direction of the laser diode; a calcium fluoride etalon and a flat-concave cavity mirror are successively arranged along the reflected light direction of the second plane mirror. The pumping source of the invention is passively Q adjusted 1.6 mum pulse laser, the structure of the whole system is simpler and more compact, the power density of 1.6 mum laser in the cavity can be used, the converting efficiency and the output power of the whole QPM-OPO system is improved, the working wavelength of the whole system is controlled at the wave band safe to human eyes, the tunable output of the all solid state mid-infrared optical parametric oscillator is realized.

The invention belongs to the technical field of solar cell and relates to an organic dye using a multi-heterocyclic derivant as a conjugate unit and a dye-sensitized solar cell made from the dye. The dye uses a plurality of heterocyclic derivants as a pi unit and belongs to a molecule with a D-pi-A structure. The dye has wide absorption spectrum and high photoelectric conversion efficiency and has application prospect in the solar cell through substituting for a noble metal dye. The dye molecule belongs to a pure organic compound; compared with the prior ruthenium dye, the organic dye does not need to use expensive metal ruthenium as a raw material and glucan as a purifying agent; additionally, the synthesis yield is high (the total yield is more than 40 percent); therefore, the organic dye has the advantages of low cost and simple production; in addition, the absorption spectrum of the dye exceeds 550 nm and the molar extinction coefficient exceeds 45000 M-1cm-1, which are far larger than the absorption spectrum and the molar extinction coefficient of the ruthenium dye; therefore, the organic has wider absorption range to solar ray. The dye-sensitized solar cell prepared from the dye has high quanta conversion efficiency (IPCE); the maximum of the quanta conversion efficiency exceeds 95 percent (nm); and the photoelectric conversion efficiency is more than 8.0 percent and exceeds that of other most pure organic dye-sensitized solar cells.

The invention discloses a mono-crystalline silicon double-sided solar cell. A front texturing morphology structure (1), a front PN emitter junction (2), a front passivated anti-reflection medium layer (3) and a front electrode (4) are sequentially formed on the front of a mono-crystalline silicon substrate (100). A back texturing morphology structure (5), a back surface field (6), a back passivated anti-reflection medium layer (7) and a back electrode (8) are sequentially formed on the back of the mono-crystalline silicon substrate. The solar cell is characterized in that the back texturing morphology structure (5) is a platform type texture surface, and platform structures (5a) are distributed on the mono-crystalline silicon substrate in a scattered, or tiled, or partially scattered, partially tiled, partially connected and partially overlapped way. The invention further discloses a preparation method of the mono-crystalline silicon double-sided solar cell. The minority carrier surface recombination and optical absorption characteristics of the double-sided solar cell are optimized, and the efficiency of quantum conversion is improved.

The invention discloses a preparation method for an anatase titanium dioxide nanocrystalline mesoporous microsphere. A butyl titanate alcoholic solution is prepared from butyl titanate and alcohol; a gelatin solution is prepared by gelatin and acetic acid; the gelatin solution is slowly dropped into the butyl titanate alcoholic solution to obtain a sol solution; then the sol solution is aged and dried to obtain dry gel; the dry gel is put into distilled water for boiling; after filtration cleaning is executed, the product is cleaned through the alcohol and then is dried to obtain the anatase TiO2 nanocrystalline mesoporous microsphere. The preparation technology disclosed by the invention is simple and favorable for large-scale popularization and application, and a used solvent is safe and environment-friendly.

The invention discloses an organic light emitting display panel and an organic light emitting display device. The organic light emitting display panel comprises a substrate, and a first electrode, a first transmission layer, an organic light emitting layer, a second transmission layer and a second electrode sequentially arranged on the substrate, wherein the organic light emitting layer comprises a blue light-emitting layer and a sapphire light-emitting layer. The wavelength scope of the blue light emitted by the blue light-emitting layer is 460nm-490nm, and the wavelength scope of the sapphire light emitted by the sapphire light-emitting layer is 425nm-455nm. The organic light emitting display panel further comprises a chroma adjustment layer which is arranged on one side of the second electrode away from the substrate, and the chroma adjustment layer is used for adjusting the light emitted from the second electrode. A blue light-emitting layer and a sapphire light-emitting layer improve the light extracting rate of the organic light emitting display panel and prolong the service lifetime of the organic light emitting layer. The display effect of the organic light emitting display panel is improved.

The invention provides a back-illuminated CMOS image sensor and a formation method thereof. The back-illuminated CMOS image sensor includes a front-end structure with a photodiode as well as an auxiliary structure and a dielectric layer which are located at the front surface of the front-end structure, wherein the auxiliary structure is surrounded by the front-end structure and the dielectric layer, and the refraction rate of the auxiliary structure is lower than the refraction rates of the front-end structure and the dielectric layer. With the back-illuminated CMOS image sensor of the invention adopted, after incident light passes through the photodiode, parts of the incident light, which are subjected to total reflection, are increased, and can enter the photodiode again, and therefore, photons absorbed by the photodiode can be effectively increased, and quantum conversion efficiency can be improved.

The technical scheme of the invention discloses an image sensor and a formation method thereof. The image sensor comprises a semiconductor substrate, a shallow groove isolation structure, a device structure and a reflecting layer, wherein the semiconductor substrate is divided into a plurality of regions, a photoelectric device is formed in the semiconductor substrate at each region, each region of the semiconductor substrate is provided with a protruding surface, the width of the protruding surface is adaptive to the size of the photoelectric device, the shallow groove isolation structure isformed in the semiconductor substrate and is arranged among the photoelectric devices, the device structure is arranged on the semiconductor substrate and in the semiconductor substrate, the reflecting layer is formed on the semiconductor substrate with the protruding surfaces, and the shallow groove isolation structure and the device structure are exposed. With the image sensor disclosed by the technical scheme, the quantum conversion efficiency of the image sensor is improved.