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Image sensor and method of forming same

A technology of image sensor and photosensitive area, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of optical crosstalk and low quantum conversion efficiency, and achieve the effect of increasing reflection and increasing quantum conversion efficiency

Inactive Publication Date: 2018-03-27
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

[0006] However, the existing CMOS image sensors have the disadvantages of low quantum conversion efficiency and serious optical crosstalk.

Method used

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  • Image sensor and method of forming same

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Embodiment Construction

[0030] Image sensors have many problems, such as low quantum conversion efficiency and serious optical crosstalk.

[0031] Now combining a CMOS image sensor, analyze the reason why the quantum conversion efficiency of the CMOS image sensor is low and the optical crosstalk is serious:

[0032] figure 1It is a schematic diagram of the structure of a CMOS image sensor.

[0033] Please refer to figure 1 , the CMOS image sensor includes: a substrate 100, the substrate 100 includes an opposite first surface and a second surface, the substrate includes a plurality of discrete photosensitive regions M, and the photosensitive region M substrate 100 There is a photodiode 110, the first surface of the substrate 100 has a gate structure 121; the dielectric layer 120 located on the first surface of the substrate 100 and the surface of the gate structure 121 has an electrical connection structure in the dielectric layer 120 150 , the electrical connection structure 150 is electrically co...

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Abstract

The invention provides an image sensor and a method of forming the same. The image sensor includes a substrate having first and second surfaces opposite to each other; and a dielectric structure on the first side of the substrate. The substrate includes a plurality of discrete photosensitive regions and isolation regions surrounding the respective photosensitive regions, and each photosensitive region including a central region and a peripheral region surrounding the central region. The dielectric structure has reflective structures therein. The reflective structures are not in contact with the substrate. The reflective structures include reflective layers in the dielectric structure at the central regions and reflective frames located in the dielectric structure. The distance between eachreflective layer and the first surface is a first interval. The reflective frames are located in the isolation regions and the peripheral regions, or extend from the isolation regions to the peripheral regions. The distance between each reflective frame and the first surface is a second interval, and the second interval is smaller than the second interval. The image sensor can improve the quantumconversion efficiency and reduce the optical crosstalk.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] With the continuous improvement of semiconductor technology, the image sensor (Image Sensor), as a basic device for information acquisition, has been more and more widely used in modern society. [0003] According to different components, the image sensor can be divided into two categories: CCD (Charge Coupled Device, Charge Coupled Device) image sensor and CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor element) image sensor. With the development of semiconductor technology, the performance of CMOS transistors has gradually improved, and the resolution has gradually surpassed that of CCD image sensors. The CMOS image sensor has the characteristics of high integration, low power consumption, high speed, and low cost. [0004] CMOS image sensor is a typical so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14629H01L27/14685
Inventor 丁琦陈世杰穆钰平黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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