74results about How to "Reduce processing defects" patented technology

A semiconductor package includes a connection structure including a first insulation layer, a second insulation layer, first and second wiring layers, and first and second connection vias. A core structure including a core member is on the first insulation layer. A first through-hole passes through the core member. Passive components are on the first insulation layer in the first through-hole and connected to the first wiring layer through the first connection via. A first encapsulant covers at least a portion of the passive components. A second through-hole passes through the core structure and the first insulation layer. A semiconductor chip is on the second insulation layer in the second through-hole and is connected to the second wiring layer through the second connection via. A second encapsulant covers at least a portion of the semiconductor chip.

An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

A p-type base layer is selectively formed on a surface of an n-type drift layer; an n-type source layer is selectively formed on a surface of the p-type base layer; and a p-type contact layer is formed to be in contact with the selectively-formed n-type source layer. A p-type counter layer is formed to be in contact with the n-type source layer, so as to overlap the p-type contact layer, so as to be separated from an interface where the p-type base layer and the gate oxide film are in contact with each other, and to be shallower than the p-type base layer. Accordingly, switching destruction caused by process defects in an insulated gate semiconductor device is reduced.

A pulse oscillating type solid laser unit that has a laser unit body whose exciting source is a laser diode that emits light in a principal energy absorbing spectrum of a solid laser activated media, and characterized by that prior to radiating laser light outside the laser unit body as a calibrating operation of a pulse laser output value, specified several varieties of rectangle pulse current values are conducted to a laser diode inside the pulse oscillating type solid laser unit so as to pulse-oscillate the laser unit body, a mean laser output value in each rectangle pulse current value is measured by the use of a laser output measuring instrument arranged inside the laser unit body so as to obtain a mean laser output value data, and in case that the laser output light is radiated outside the laser unit body, a pulse current value linear-predicted based on an obtained mean output value data is conducted to the laser diode so as to obtain a desired pulse laser output value.

The invention relates to a water cooling copper crucible directional freezing method for a superhigh-temperature Nb-Si alloy, relates to a metal directional freezing method, in particular to a directional freezing method for the superhigh-temperature Nb-Si alloy, and aims at solving the problems of the existing directional freezing method that the metal is easy to be contaminated, the directional freezing efficiency is low, the structure form is not easy to adjust and the comprehensive mechanical property of the alloy is poor. The directional freezing method comprises the following main steps that 1. the interior of a furnace is provided with a loading rod and backing material, a water cooling copper crucible is arranged outside of the loading rod and the backing material, and an induction coil is arranged outside of the water cooling copper crucible; 2. the furnace is vaccumized firstly and then argon is introduced; 3. after the loading rod and the backing material are sent into the induction range of the induction coil, and single-phase alternating current is introduced to the induction coil so as to move the loading rod and the backing material downwards; and 4. when the material transmitting rod is moved downward and reaches the preset length, the material transmitting rod stops moving downward and the power applied to the induction coil is stopped. The method is applicable to preparing the superhigh-temperature Nb-Si alloy.

Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target according to claim 1 or claim 2, wherein a relative density of the target is 99% or higher, an average crystal grain size is 50 µm or less, and a crystal grain size range is 5 to 200 µm. The present invention aims to inhibit abnormal grain growth in the tungsten target by reducing the amount of iron in the tungsten sintered compact sputtering target.