449results about How to "Improve operating characteristics" patented technology

A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes. The non-volatile memory device may improve erase operation characteristics by suppressing back tunneling of electrons by substituting a charge blocking layer interposed between a gate electrode and a charge storage layer with an air gap, and a method for fabricating the non-volatile memory device.

A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

A serpentine device having a proximal end and a distal end comprising a series of discs arrayed in succession and on center along a common, neutral axis, wherein the discs comprise a first and second surface; and at least one flexible interconnect extending between and connecting each disc to any succeeding disc according to a pre-determined connection configuration, wherein the interconnects are indirectly connected to one another through the discs and configured to provide torsional and bending support to each of the discs connected thereto under an applied load, thus achieving a continuum of flexibility along an entire length of the serpentine device, as well as to facilitate the torquability of the serpentine device. The serpentine device may further comprise a bendable member and at least one transfer element configured to perform one or more transfer functions, namely the transfer of energy, work, fluid, electricity, light energy, sound energy, matter, etc. from one location to another location, and particularly from a source to one or more of the discs of the serpentine device. An actuation system is also featured, which is configured to selectively actuate the discs in a pre-determined direction in three-dimensional space.

To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles.

A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.

A semiconductor memory device with a clock synchronization circuit capable of performing a desired phase/frequency locking operation, without the jitter peaking phenomenon and the pattern jitter of an oscillation control voltage signal using injection locking. The device includes a phase-locked loop that detects a phase/frequency difference between a feedback clock signal and a reference clock signal to generate an oscillation control voltage signal corresponding to the detected phase/frequency difference, and generates the feedback clock signal corresponding to the oscillation control voltage signal. An injection locking oscillation unit sets up a free running frequency in response to the oscillation control voltage signal and generates an internal clock signal which is synchronized with the reference clock signal.

Apparatus for producing an object by sequentially forming thin layers of a construction material one on top of the other responsive to data defining the object, the apparatus comprising: a plurality of printing heads each having a surface formed with a plurality of output orifices and controllable to dispense the construction material through each orifice independently of the other orifices; a shuttle to which the printing heads are mounted; a support surface; and a controller adapted to control the shuttle to move back and forth over the support surface and as the shuttle moves to control the printing heads to dispense the construction material through each of their respective orifices responsive to the data to form a first layer on the support surface and thereafter, sequentially the other layers; wherein each printing head is dismountable from the shuttle and replaceable independently of the other printing heads.

A liquid-cooled battery, in particular in the form of an energy store for an electrical drive in a motor vehicle is provided. The battery has a plurality of storage cells 2 and at least one volume 4 which makes thermally conductive contact with the storage cells 2 and through which a cooling medium can flow. Each of the storage cells 2 has a safety valve 12 which opens the storage cell when a predetermined media pressure in it is exceeded, and connects the volume of the storage cell to the surrounding area. The safety valve 12 is arranged in the storage cell 2 and the storage cell 2 is arranged with respect to the volume 4 through which the cooling medium can flow such that a connection is produced between the volume 4 through which the cooling medium can flow, and the interior of the storage cell 2 if the safety valve 2 is operated.

A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.

A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.

A lighting system and components are described for a lighting assembly, including a socket having a socket body and an electrical connector with a seat in the socket to seal around a light source. The socket is preferably configured to be independent of the mounting arrangement for the lighting assembly. An insulator is also disclosed for a lamp such as a fluorescent lamp having a body which protects the contact on the lamp so as to form a recessed lamp conductor. The combination of a socket and lamp insulator is also disclosed for providing a socket and insulator assembly for reducing the possibility of injury or damage due to high open circuit voltage, environmental effects and the like. Additionally, a lighting assembly is disclosed incorporating the insulator, socket and mounting arrangements.

Systems and associated methods for planning and control of a fleet of unmanned vehicles in missions that are coordinated temporally and spatially by geo-location, direction, vehicle orientation, altitude above sea level, and depth below sea level. The unmanned vehicles' transit routes may be fully autonomous, semi-autonomous, or under direct operator control using off board control systems. Means are provided for intervention and transit changes during mission execution. Means are provided to collect, centralize and analyze mission data collected on the set of participating unmanned vehicles.

A method and apparatus for fuel reforming using the exhaust gases from internal combustion engines and high temperature combustion processes in which a fuel for reforming and steam mixture is introduced into a tube bundle having a plurality of heat exchange tubes and heat from the exhaust gases is transferred into the heat exchange tubes, thereby increasing the temperature of the mixture. The heated mixture is reformed by contact with a reforming catalyst external to, but proximate to the exit of, the tube bundle, forming a reformed fuel. To remove substantially all of the heat from the exhaust gases, a plurality of tube bundles and associated reforming catalyst arranged in series are provided.

A semiconductor package substrate is provided. The package substrate includes a mold base and an interposer block embedded in the mold base, said interposer block having a plurality of vertical conductive lines therein. A metallization layer is formed on the surface of the interposer block or the mold base, said metallization layer being electrically connected to at least one of the vertical conductive lines. A semiconductor chip may be mounted on or embedded in the mold base.