57results about How to "Promotes lateral growth" patented technology

A method of fabricating a low temperature poly-silicon (LTPS). A plurality of semiconductor heat sinks are formed over a substrate. A buffer layer and an amorphous silicon layer are formed over the substrate and the semiconductor heat sinks. Following that, a laser crystallization process is performed to transform the amorphous silicon layer into a poly-silicon layer.

A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layer includes a first portion over the mask layer and second portions in the gaps, wherein the III-V compound semiconductor layer overlies a buffer / nucleation layer.

A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.

Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).

The invention provides a timed and circulating AM (arbuscular mycorrhizal) fungus expanding propagation and functional experiment device and relates to culture of soil microorganisms. The device is provided with an incubator cover, an incubator, a culture medium, a space for adding an isotope and the like, a hypha chamber, a water drainage tank cover, a water drainage tank, a filter pump, a plant growth chamber, a nozzle regulation and control hook and a nylon net, wherein the incubator cover covers the incubator, the incubator is divided into the hypha chamber and the plant growth chamber by virtue of a longitudinal net, the culture medium and the space for adding the isotope and the like are placed in the hypha chamber, and a water drainage hole is formed in the bottom of the incubator; the water drainage tank is arranged at the bottom of the incubator, the water drainage tank cover covers the water drainage tank, the filter pump is arranged in the water drainage tank, the nozzle regulation and control hook and the nylon net are arranged in the plant growth chamber, an atomizing nozzle is formed in the nozzle regulation and control hook, the atomizing nozzle and the filter pump are connected by virtue of a PVC hose, and a plant fixing device is arranged on the top of the plant growth chamber.

There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

An epitaxial layer of silicon (Si) or silicon-germanium (SiGe) extends over the edge of silicon trench isolation (STI), thereby increasing the effective width of an active silicon region (RX) bordered by the STI. The RX region may have a <100> crystal orientation. An effective width of an FET device formed in the RX region may be increased, therefore performance may be improved with same density. Isolation may not be degraded since RX-to-RX distance is same at bottom. Junction capacitance may be reduced since part of the RX is on STI.

The invention relates to an epitaxial growth method for a GaN-based LED (Light Emitting Diode) epitaxial active area basic structure, and aims at improving the current conditions of poor quality and low luminous efficacy of ordinary epitaxial growth crystals. The method comprises the following steps that: (1) a layer of SiO2 is deposited on a substrate covered with a GaN layer in a PECVD (Plasma Enhanced Chemical Vapor Deposition) way, then, a layer of Ni thin film is formed on the SiO2 through vapor deposition, and an Ni nano island is prepared through rapid thermal annealing; (2) the Ni nano island is used as a mask for etching the SiO2 and the GaN layer, the Ni thin film is removed after the etching completion, and GaN nano pillars with SiO2 pattern masks on the tops are obtained; and (3) the GaN transversely and epitaxially grows on the GaN nano pillars with the SiO2 pattern masks on the tops, and the GaN grows in the lateral direction on the side wall of each nano pillar to form a cavity; and crystal lattices of the SiO2 and the GaN are unmatched, so the GaN can transversely grow through crossing the SiO2 pattern masks, the SiO2 is finally covered, the GaN further grows 1 to 2[mu]m after the completion of the transverse epitaxial growth, and the active area basic structure is obtained. The epitaxial growth method provided by the invention has the advantages that the internal and external quantum effects can be simultaneously improved, so that the light efficiency of a GaN-based LED can be improved.

The invention belongs to the technical field of manufacturing of gallium-nitride-based films and gallium-nitride-based devices and provides a gallium-nitride-based film on a graphene-modified patterned metal substrate and a preparation method of the gallium-nitride-based film on the graphene-modified patterned metal substrate. Patterned metal is used as the substrate; a catalytic metal layer is prepared on the metal substrate through a magnetron sputtering method firstly; and then, an electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition method is adopted to sequentially conduct nitrogen plasma cleaning on the catalytic metal layer, prepare a graphene layer, prepare an AlxGayIn1-x-yN buffering layer and prepare AlxGayIn1-x-yN epitaxial layer. The gallium-nitride-based film which is low in dislocation density and high in crystalline quality can be prepared on a low-cost non-monocrystal metal substrate. The prepared gallium-nitride-based film can be directly used as a template substrate and the like of the gallium-nitride-based devices and has a broad application prospect.

An epitaxial layer of silicon (Si) or silicon-germanium (SiGe) extends over the edge of silicon trench isolation (STI), thereby increasing the effective width of an active silicon region (RX) bordered by the STI. The RX region may have a <100> crystal orientation. An effective width of an FET device formed in the RX region may be increased, therefore performance may be improved with same density. Isolation may not be degraded since RX-to-RX distance is same at bottom. Junction capacitance may be reduced since part of the RX is on STI.

The invention discloses a light-emitting diode (LED) epitaxial wafer growing on an Si patterned substrate and a preparation process of the LED epitaxial wafer. The preparation process includes the following steps of using the Si patterned substrate and selecting a crystal face (111) as a crystal orientation, wherein a plurality of pattern projections with the same shapes are distributed on the crystal face (111); subsequently, sequentially growing an AlN buffer layer, an AlGaN step buffer layer, an u-GaN layer, an n-GaN layer, an InGaN / GaN quantum well layer and a p-GaN layer on the Si patterned substrate; finally, manufacturing a cavity in the top of each pattern projection. According to the LED epitaxial wafer growing on the Si patterned substrate and the preparation process of the LED epitaxial wafer, Si is used as the substrate, meanwhile, horizontal epitaxial growth of a thin film is promoted by combining the pattern substrate and the cavities, crystal qualities are improved, the stress condition is effectively relieved so as to solve the crack problem and avoid difficulties of light absorption of the Si patterned substrate, and the obtained LED epitaxial wafer is good in photoelectric property, high in crystalline quality, and applicable to LED devices.

Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.

The invention belongs to the technical field of photocatalytic thin film manufacturing, and provides a photocatalytic thin film on a foam metal-graphene composite substrate and a preparation method. Concretely, the preparation method comprises the steps of taking a foam metal-graphene composite material as a substrate, firstly using an electron cyclotron resonance-plasma enhancing metal organic matter CVD (chemical vapor deposition) method to successively perform nitrogen treatment of the foam metal-graphene composite substrate, preparation of a GaxZnl-xNxO1-x buffer layer and preparation of an n-type GaxZn1-xNxO1-x layer, then using a thermal polymerization method to prepare a p-type g-C3N4 layer, and finally using a magnetron sputtering method to prepare a precious metal nanometer granular layer. The prepared photocatalytic thin film has a very good visible light photocatalysis effect, can be used for photolyzing water to produce hydrogen, degrading organic pollutant in waste water,removing harmful gas and purifying air, and has a broad application prospect.

The invention mainly relates to the technical field of tea tree planting, and discloses a method for sowing and raising seedlings of tea trees, including: seed freezing, seed enzymolysis, seed fermentation, seed germination, and seed planting; the method is simple and easy to operate, and the germination rate of tea tree seeds reaches 68.3%, the germination time is shortened to 14-15 days, and the germination time of seeds after sowing is shortened to 10-11 days, which significantly improves the planting efficiency of tea tree seeds and saves planting costs by 7.3%; first freeze the tea tree seeds to stimulate the seeds The vitality of the germ, inhibits the activity of dormant substances, relieves seed dormancy, and accelerates seed germination; enzymatic hydrolysis of seeds after freezing destroys the structure of the seed shell, increases the permeability of the seed shell, promotes the entry of water and nutrients into the seed shell, and provides the nutrients needed for germ growth. Nutrients, improve seed germination rate.

The invention discloses a rapid loquat seedling culture method. The method comprises the following steps: selecting a high-quality wild peach tree with good two-year growth potential; cutting a section, which is 12 to 15 cm in length and contains three integrated buds, from the branch towards south in March to April of the same year to serve as a cuttage strip; after performing sterilization and rooting liquid soaking treatment, adopting the cuttage strip at two stages of container cultivation and seedling soil cultivation to perform seedling culture. The root of the cuttage strip is stimulated by a water flow impact method, so that the quick growth of the root can be promoted, the cultivation time in a culture solution is prolonged, stress resistance is enhanced and the root system of seedlings is thickened; meanwhile, the seedlings with strong growth potential can be integrally transplanted to seedling soil, the water and fertilizer management of the seedling soil is strictly controlled, the gaps of the seedling soil are increased, the water storage and water seepage capabilities of the seedling soil are improved, the utilization ratio of the fertilizer is increased, the final-period management difficulty is reduced, the seedling culture cycle is shortened, high-quality nursery stocks are obtained through uniform management, the survival rate after transplanting reaches 98.6% or above, fruit settling is easy and the economic benefit is significant.

The invention provides a lithium metal negative electrode which comprises a substrate and a composite interface layer arranged on the substrate, the substrate is made of lithium metal, and the composite interface layer is made of lithium tin alloy and lithium nitride. The lithium metal negative electrode can inhibit the growth of lithium dendrites. The invention also provides a preparation methodof the lithium metal negative electrode and a lithium-ion battery.

A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.

The invention discloses a method for cultivating caulis spatholobi in a short period. The method comprises the steps that S1, management in the first year comprises the steps of land selection, land preparation and base fertilizer application, field planting, pulling branches to a tree, weeding, topdressing and water management; and S2, management in the second year and the fourth year comprises pruning, intertillage and topdressing, water management and medicinal material harvesting, wherein a selected land is a planting land under a hillside forest or a dense forest valley, pulling the branches to the tree is performed 3-6 months after field planting, or when newly-grown branches grow to 1-2 m, the branches are wound around arbor trunks, and the water management is to keep the soil of the planting land moist, and the humidity is 50%-70%. The method can solve the problems of loose plant shape, a plurality of branches, slow rattan stem transverse growth and the like in the artificial cultivation process of the caulis spatholobi, and achieves the purposes of shortening the production cycle of caulis spatholobi medicinal materials and improving the yield of the medicinal materials.

The invention relates to the technical field of ginger planting and discloses a high mountain planting method of ginger. The method comprises the steps of seeding in autumn, top application in spring, illumination adjustment, top application in summer and harvest in autumn; the method is simple, the obtained ginger is green and ecological, safe and healthy and abundant in nutrient, the yield of the ginger can reach 4732 kg per mu, and the yield and the quality of the ginger are obviously improved, so that the economic income of farmers is increased by 18.2%; after the ginger is harvested in autumn, the soil is subjected to fertilization and deep harrowing, seed ginger is sowed on the soil under woods, and the seeding depth is larger; meanwhile, the soil surface is covered with fallen leaves, so that the soil temperature can be improved, and freezing injury of the seed ginger in winter is avoided; meanwhile, as the temperature rises in spring, the seed ginger gradually sprouts and comes up out of the ground, the seed ginger can adapt to the temperature and humidity of high mountains completely, a conventional planting method that high temperature stratification is firstly conducted and then planting is conducted is avoided, the adaptive capacity of bud seedlings to the high mountain environment is improved, so that the survival rate reaches 98.4%, the planting efficiency of the ginger is obviously improved, and the planting cost is saved.

The invention discloses an LED epitaxial growth method, which sequentially comprises the steps of processing a substrate, growing a low-temperature nucleation layer GaN, growing a high-temperature GaNbuffer layer, growing an undoped u-GaN layer, growing an N2 and H2 mixed atmosphere low-temperature AlInGaN:Zn layer, growing an H2 atmosphere medium-temperature InGaN:Si layer, growing an N2 atmosphere high-temperature GaN:Mg layer, growing a light-emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer, growing a P-type GaN contact layer and cooling. Through introducing the structure of the N2 and H2 mixed atmosphere low-temperature AlInGaN:Zn layer, the H2 atmosphere medium-temperature InGaN:Si layer and the N2 atmosphere high-temperature GaN:Mg layer, the method disclosedby the invention improves the electron hole pairs in a light-emitting area of a quantum well, enhances the light-emitting radiation efficiency, improves the light-emitting efficiency of the LED and reduces the warpage of the epitaxial wafer.

The invention belongs to the field of seedling growing technologies for watermelons, and particularly discloses a seedling growing method for enhancing the sweetness of watermelons. The particular seedling growing method includes (1), treating watermelon seeds; (2), sowing the seeds and then carrying out seedling growing management. The seedling growing method has the advantages that the cell metabolic capacity of the seeds can be effectively improved, the seedling emergence rate can be obviously increased, growth and development of watermelon seedlings can be accelerated, the disease resistance and the drought resistance of the watermelon seedlings can be effectively enhanced, and the seedling growing method is favorable for cultivating strong seedlings; supplemental lighting treatment is carried out in seedling growing periods, nutrient solution is applied to roots in the seedling growing periods, small environments favorable for growth of the watermelon seedlings can be created, accordingly, chlorophyll a and the total contents of chlorophyll can be effectively increased, and the photosynthetic capacity can be enhanced; the watermelon seedlings have sufficiently robust functional leaves without damage due to diseases and insect pests, transverse growth of stems of the seedlings and biomass accumulation can be promoted, the robustness of the seedlings can be improved, the nutrient absorption and utilization capacity of transplanted seedlings can be effectively enhanced, synthesis of nutrient substances can be promoted, and accordingly the watermelons are high in organic nutrient accumulation, yield and sugar content.

The invention discloses a cutting seedling-growing method of pachira macrocarpa. The cutting seedling-growing method comprises the following operating steps: (1) from June to August in each year, selecting current-year top shoots with the length of 16-20cm as cuttings, completely immersing the cuttings into a soaking solution, then taking out the cuttings and performing ultrasonic treatment to the cuttings; (2) cutting the cuttings obtained after the ultrasonic treatment into a seedling-growing substrate; (3) at 8 am, watering each cutting once every two days; (4) sufficiently irradiating seedling-growing pots outdoors from 9 am to 11 am, continuing irradiating the seedling-growing pots outdoors from 3 pm to 7 pm, then transferring the seedling-growing pots indoors, spraying the cuttings with a nutrient solution, and then continuing irradiating the seedling-growing pots by using purple light. According to the cutting seedling-growing method of the pachira macrocarpa, provided by the invention, the survival rate of the cuttings is high, the seedling-growing period is relatively short, seedlings grow well, and expanded rhizomes can be formed on the bases of the seedlings, the seedling stems are beautiful and easy to bend, and the modeling performance of the seedlings is superior to that of the seedlings obtained in a sowing propagation way.

The invention discloses a method for oblique and horizontal dwarfing culture of papaya. The method comprises steps including stock plant selection, seed collection, seedling culture, field planting, management after field planting, disease and pest control and the like and is characterized in that field planting is started when 6-7 leaves grow out during culture of seedlings, and oblique pulling is started when 22-25 leaves of a plant grow out after 1-2 months of field planting; the oblique pulling method comprises steps as follows: a wood stick or bamboo stick is obliquely inserted in the position about 80-100 cm away from the plant, a rope is taken, one end of the rope is tied to the position, where 18-20 leaves grow out, of the upper part of a papaya seedling, the other end of the rope is tied to the wood stick or bamboo stick, the rope is forcibly and obliquely pulled, and the plant is inclined to get close to the ground. According to the method, the fruit set percentage and the number of commodity fruits can be increased, the fruiting life is prolonged, and the yield of the papaya is increased; the height of the plant can be effectively reduced, and the working efficiency of operation in a farming season is improved; the production risk can be reduced by reducing the plant height.

The invention discloses a cultivation method of selenium-enriched millettia speciosa champ. According to the cultivation method, direct dibble seeding or vertical seedling transplantation is not adopted, seedlings are grown for 12 months to 18 months first and then transplanted after roots of the seedlings are initially formed, the roots of the transplanted seedlings are all transversely and radially placed in nutrient soil with the depth of 12cm, a hard bottom layer prevents the roots from growing downwards, a water and fertilizer conserving tillage layer promotes transverse growth of the roots, and the ground temperature of the tillage layer within the depth range of 15cm is high and promotes growth and expansion of the roots, so that the yield is increased, the quality is improved and the production value is increased; one week after transplantation, a selenium-enriched nutrient solution is sprayed once every month, and the obtained millettia speciosa champ is rich in selenium.

The invention relates to a planting method of red orange. The planting method includes: (1), selecting and preparing land; (2), pressing branches for propagation; (3), digging planting pits; (4), planting; (5), managing young trees; (6), managing fruiting trees; (7), preventing and controlling disease and pest; (8), harvesting at proper time. A position, where epidermis is removed, of each branch is wrapped by mud, bone powder and a rooting agent in the mud are conducive to branch rooting, and rice vinegar plays a role in sterilizing and disinfecting, so that red orange seedlings maintain excellent performance that mother plants have; iron wires are used to bind trunks of the young trees, so that transverse growth of the red orange trees is facilitated, cultivation time of the red orange trees is reduced, and fruit yield of the red orange trees is increased; nitrogen fertilizer and phosphorus fertilizer for promoting shooting and sodium humate are proper in proportion, so that branch shoots are promoted to grow transversely; nitrogen fertilizer and phosphorus fertilizer for strengthening shoots and sodium humate are proper in proportion, so that the branch shoots can be promoted to grow more thickly and strongly; artificial pollination is performed after flower thinning, so that fruit setting rate of the red orange is increased.

The invention discloses an oxide / metal core-shell structure quantum dot. The quantum dot comprise a substrate, a metal quantum dot core and a metal oxide shell layer, wherein the substrate, the metalquantum dot core and the metal oxide shell layer are sequentially arranged from bottom to top, and the metal oxide shell layer wraps a metal quantum dot. The invention further discloses the oxide / metal core-shell structure quantum dot and application. The prepared oxide / metal core-shell structure quantum dot has the advantages of being controllable in size, good in distribution uniformity and thelike. A preparation method has the advantages of being simple in growth process and low in cost.

The invention discloses a crossed tapered quantum dot. The crossed tapered quantum dot comprises a substrate and a crossed tapered quantum dot body which are arrayed in sequence from bottom to top. The invention further discloses a preparation method and application of the crossed tapered quantum dot. The crossed tapered quantum dot prepared by the preparation method has the characteristics of controllable size, good distribution uniformity and the like; the preparation method has the advantages of simple growth technology and low cost.