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Oxide/metal core-shell structure quantum dot and preparation method and application thereof

An oxide shell, quantum dot technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, electrical components, etc., can solve the problems of complex process, unfavorable industrial production, poor process continuity, etc. Improve luminous efficiency, realize thin-film LED devices, and promote the effect of lateral growth

Pending Publication Date: 2018-02-23
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are complicated in technology, poor in continuity of operation, and unfavorable for suitability for industrialized production

Method used

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  • Oxide/metal core-shell structure quantum dot and preparation method and application thereof
  • Oxide/metal core-shell structure quantum dot and preparation method and application thereof
  • Oxide/metal core-shell structure quantum dot and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A preparation method of oxide / metal core-shell structure quantum dots, comprising the following steps:

[0035] (1) Substrate treatment: Put the P-type substrate into deionized water, and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the P-type substrate, and then wash it with hydrochloric acid, acetone, and ethanol in sequence to remove the surface organic matter. Blow dry with high-purity dry nitrogen, and place the P-type substrate in a vacuum chamber with a vacuum degree of 8.6×10 -8 Pa, annealing at 700°C for 30 minutes to remove residual carbides on the substrate surface to obtain a clean and flat surface;

[0036] (2) Preparation of metal ultra-thin film: under high vacuum conditions with a temperature of 250°C, the vacuum degree is 4×10 -6 Pa, adopting thermal evaporation to deposit a 3nm thick Pt ultrathin film on the P-type substrate processed through step (1);

[0037] (3) Preparation of metal quant...

Embodiment 2

[0041]A preparation method of oxide / metal core-shell structure quantum dots, comprising the following steps:

[0042] (1) Substrate treatment: Put the substrate into deionized water, ultrasonically clean it at room temperature for 5 minutes, remove the dirt particles on the surface of the substrate, and then wash it with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter, and dry it with high-purity Blow dry with nitrogen, place the substrate in a vacuum chamber with a vacuum degree of 8.7×10 -8 Pa, annealing at 750°C for 50 minutes to remove residual carbides on the substrate surface to obtain a clean and flat surface;

[0043] (2) Preparation of metal ultra-thin film: under high vacuum conditions with a temperature of 450°C, the vacuum degree is 9.8×10 -7 Pa, adopt thermal evaporation method to deposit a layer of 3nm thick Ag ultrathin film on the substrate processed through step (1);

[0044] (3) Preparation of metal quantum dots: under h...

Embodiment 3

[0047] A preparation method of oxide / metal core-shell structure quantum dots, comprising the following steps:

[0048] (1) Substrate treatment: Put the substrate into deionized water, ultrasonically clean it at room temperature for 5 minutes, remove the dirt particles on the surface of the substrate, and then wash it with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter, and dry it with high-purity Blow dry with nitrogen, place the substrate in a vacuum chamber with a vacuum degree of 7.6×10 -8 Pa, annealing at 1000°C for 100 minutes to remove residual carbides on the surface of the substrate to obtain a clean and flat surface;

[0049] (2) Preparation of metal ultra-thin film: under high vacuum conditions with a temperature of 500°C, the vacuum degree is 9×10 -7 Pa, adopt thermal evaporation to deposit a layer of 10nm thick Mn ultra-thin film on the substrate processed through step (1);

[0050] (3) Preparation of metal quantum dots: unde...

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Abstract

The invention discloses an oxide / metal core-shell structure quantum dot. The quantum dot comprise a substrate, a metal quantum dot core and a metal oxide shell layer, wherein the substrate, the metalquantum dot core and the metal oxide shell layer are sequentially arranged from bottom to top, and the metal oxide shell layer wraps a metal quantum dot. The invention further discloses the oxide / metal core-shell structure quantum dot and application. The prepared oxide / metal core-shell structure quantum dot has the advantages of being controllable in size, good in distribution uniformity and thelike. A preparation method has the advantages of being simple in growth process and low in cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to an oxide / metal core-shell quantum dot and its preparation method and application. Background technique [0002] As a new type of solid-state lighting source and green light source, light diode (LED) has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02H01L33/06B82Y20/00B82Y30/00B82Y40/00
CPCH01L33/06C09K11/02B82Y20/00B82Y30/00B82Y40/00Y02P70/50
Inventor 杨为家赵志诚陈岩刘铭全刘俊杰刘均炎何鑫唐秀凤
Owner WUYI UNIV
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