The present invention provides a
diffusion furnace, comprising: a
reaction chamber extending along a first direction, the
reaction chamber having an exhaust end, a plurality of wafers capable of being sequentially arranged along the first direction, the surfaces of the wafers extending along a second direction, the second direction being perpendicular to the first direction or forming an
acute angle with the first direction; the gas pipelines penetrate through the side wall of the
reaction chamber so as to introduce external reaction gas into the reaction chamber, the gas channels are distributed from the exhaust end in the first direction, and an acute included angle is formed between the axis of each gas channel and the second direction. The reaction gas sprayed from the gas channel can directly reach the center of the
wafer through the inclined design of the gas channel, so that the problem that the two sides are thick and the middle is thin in the
deposition process is solved, due to the exhaust effect of the exhaust end, the reaction gas reaches the middle of the
wafer and diffuses towards the two sides, meanwhile,
diffusion of the gas is accelerated through rotation of the
wafer boat, and the deposition efficiency is improved. Therefore, the thickness of the film layer deposited at the center and the edge of the surface of the single wafer is more uniform, and the product yield is improved.