Method for controlling uniformity of substrate oxide layer in manufacture procedure of shallow-channel insulation layer

Abstract

The invention discloses a method for controlling uniformity of a substrate oxide layer in a manufacture procedure of a shallow-channel insulation layer, which belongs to the technical field of technology of CMOS (complementary metal oxide semiconductor) semiconductor devices. The steps of the method are as follows: growing one more layer of thin film layer while growing a substrate silicon oxide layer, removing a substrate silicon nitride layer, measuring the thickness of the substrate silicon oxide layer after removing the substrate silicon nitride layer, taking the thickness as a front value, simultaneously setting a target value which is the thickness value of the substrate silicon oxide layer under an ideal condition, setting a modification value for the substrate silicon oxide layer in each batch, wherein the value range of the modification value is the difference range of the front value and the target value, and modifying and etching the substrate silicon oxide layer according to the modification value. The method adopting the technical scheme has the benefits that the problem of non-uniform thickness of the substrate oxide layers is improved, the manufacture cost of the semiconductor technology is saved, and the production-manufacturing time of a product is shortened.

Description

technical field [0001] The invention relates to the technical field of CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) semiconductor device technology, in particular to a method for controlling the uniformity of a substrate oxide layer in a shallow trench insulating layer manufacturing process. Background technique [0002] In the process of CMOS semiconductor devices, as the size of the device continues to shrink, the requirements for the process are getting higher and higher. The stability of wet etching is also becoming more and more important. [0003] In the current CMOS process, a shallow trench insulation (shallow trench isolation, STI) process is still widely used. like Figure 1.1-1.5 Shown is a block diagram of a typical STI process. first, Figure 1.1 shows the growth of substrate silicon oxide and substrate silicon nitride, followed by photolithography and dry etching to form as Figure 1.2 The STI pattern shown is form...

AI Technical Summary

Problems solved by technology

This approach solves the problem of uneven thickness of the oxide film before ion implantation, but because the oxide layer needs to be regrown, it must go through a diffusion process, which has a long cycle and high cost.

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