The invention relates to the technical field of
semiconductor devices, in particular to a PIM device and a manufacturing method thereof, and the PIM device comprises a
copper-clad
ceramic substrate, and a three-phase rectification unit, a three-
phase inversion unit, a braking unit and a
temperature control detection NTC device which are arranged on the
copper-clad
ceramic substrate; the three-phase rectification unit comprises six
diode chips arranged on the
copper-clad
ceramic substrate and clip copper sheets corresponding to the six
diode chips one by one; the three-
phase inversion unit comprises six IGBT chips, six clip emitter copper sheets in one-to-one correspondence with the six IGBT chips, and six clip control
electrode copper sheets in one-to-one correspondence with the six IGBT chips. The braking unit comprises a
diode chip VII, an IGBT
chip VII, a clip copper sheet, a clip emitter copper sheet and a clip control
electrode copper sheet. According to the technical scheme, the PIM device is small and exquisite in structure and convenient to use, when the PIM device is applied to a related circuit, the circuit structure can be simplified, the PIM device is stable in performance based on the clip technology adopted by the PIM device, and the circuit using the PIM device is further safe and reliable.