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45results about How to "Improve exit efficiency" patented technology
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Light guide plate, light guide plate assembly, and surface illuminating device and liquid crystal display device using these
ActiveCN101473167AImprove utilization efficiencyUniform injectionMechanical apparatusPoint-like light sourceNon symmetricLiquid-crystal display
A light guide plate, comprising a light exiting surface and a light entering end, has a shape in which its thickness perpendicular to the light exiting surface increases gradually as it is away from the light entering end and has scattering particles scattered therein. A light guide plate assembly comprises this guide plate, and a prism sheet in which a plurality of prisms are arranged in parallel with the apex angles of the prisms arranged facing the light exiting surface. A surface illuminating device comprises a light guide plate or a light guide plate assembly, and a liquid crystal display device comprises the surface illuminating device. The scattering particles scatter light entering at the light entering end and propagating through the inside and satisfy the following expression (1) and (2), and the apex angles of the prisms of the prism sheet satisfy the following expressions (3) and (4). (F is scattered sectional area, NP is particle density, LG is length of guide plate along incident direction, KC is correction coefficient, phi is apex angle of symmetric prism, and theta1 and theta2 are two apex angles divided by perpendicular of non-symmetric prism.) 1.1<=FNPLGKC<=8.2 ---(1) 0.005<=KC<=0.1 ---(2) 55 DEG<=theta<=80 DEG ---(3) 0 DEG<= theta1<= 15 DEG and 30 DEG<= theta2<= 45 DEG ---(4).
Owner:FUJIFILM CORP
Light guide plate, mold for forming light guide plate, and method for manufacturing a mold for forming light guide plate
InactiveCN101017217AImprove exit efficiencyOptical surface grinding machinesOptical light guidesOptoelectronicsLight guide
Owner:SEIKO EPSON CORP
Light guide plate, planar illuminator using the same and liquid crystal display apparatus
InactiveCN102116892AImprove utilization efficiencyUniform injectionPrismsMechanical apparatusLiquid-crystal displayLight guide
The invention provides a light guide plate, a planar illuminator using the same and a liquid crystal display apparatus. The light guide plate made of a transparent resin is used for converting light of light sources into planar light. The light guide plate comprises a light exit plane having a rectangular outer shape; four light entrance planes which are connected to four sides of the light exit plane and are substantially orthogonal to the light exit plane; and a backside which is planes opposed to the light exit plane and includes four inclined planes inclined to be farther from the light exit plane toward a center from the four light entrance planes, wherein a minimum thickness is in the four light entrance planes and a maximum thickness is in the center from the four light entrance planes.
Owner:FUJIFILM CORP
Light guide plate and manufacturing method thereof
InactiveCN102298169ASmall color differenceImprove exit efficiencyDiffusing elementsOptical light guidesLight guideLight emission
A light guide plate and manufacturing method thereof, the light guide plate manufacturing method mainly comprising: forming a light guide plate body (1); then forming a plurality of light scattering units (2) within the light guide plate body (1), the light scattering units (2) being arranged according to a specific rule. The light scattering units (2) can reduce light guide plate color differences, avoid the generation of a dead pixel, and improve light emission efficiency.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Semiconductor light emitting diode and manufacturing method thereof
ActiveCN106848013AImprove luminous efficiencyImprove light output efficiencyNanoopticsSemiconductor devicesElectrical conductorQuantum well
The invention discloses a semiconductor light emitting diode and manufacturing method thereof. The structure and the semiconductor light emitting diode manufactured by adopting the manufacturing method can improve the light emitting efficiency and the light emitting strength. To achieve the purpose, the semiconductor light emitting diode comprises a substrate, a buffering layer and a first semiconductor layer with a first conductivity type, and a multi-quantum well has an active layer of a V-shaped pit, a Al quantum dot / a AlN nanorod / a Ga quantum dot / a GaN nanorod with a multi-cycle, a second semiconductor layer of a second conductivity layer and a contact layer; the portion of V-shaped pits corresponding to the lower surface, the center and the upper surface of the quantum well of the active layer has the Al quantum dot / the AlN nanorod / the Ga quantum dot, and the thickness in each cycle is identical to that of the quantum well; the portion of the V-shaped pit of a barrier layer of the quantum well has a GaN nanorod, and the thickness of each cycle is identical to the barrier layer.
Owner:JIANGSU BAO PU LAY SEMICON
Semiconductor chip and method for producing a semiconductor chip
A semiconductor chip (1) is specified comprising a carrier (3) and comprising a semiconductor body (2), which comprises a semiconductor layer sequence having an active region (21) provided for generating radiation, wherein: the carrier has a first carrier area (31) facing the semiconductor body (2) and a second carrier area (32) remote from the semiconductor body (2), the semiconductor body (2) is cohesively fixed to the carrier (3) by means of a connecting layer (4), and plurality of reflective or scattering elements (40, 7) are formed between the second carrier area (32) and the active region (21). A method for producing a semiconductor chip is furthermore specified.
Owner:OSRAM OPTO SEMICONDUCTORS GMBH & CO OHG
Spatial coherent X-ray source of surface-transmitting array structure
PendingCN109473329AImprove exit efficiencyImprove throughputCathode ray concentrating/focusing/directingSoft x rayArray data structure
The invention provides a spatial coherent X-ray source, and the X-ray source comprises a cathode, an electron beam gathering device and a transmitting anode target. The cathode comprises a surface-transmitting type electron emitter, and the surface-transmitting type electron emitter, the electron beam gathering device and the transmitting anode target are sequentially disposed on a coaxial opticalpath. The surface-transmitting type electron emitter has a transmitting plane which is perpendicular to the optical axis and used for transmitting a first electron beam. The electron beam gathering device is used for receiving and gathering the first electron beam emitted by the transmitting plane to obtain a second electron beam, and transmitting the second electron beam to the transmitting anode target to bombard the transmitting anode target. The transmitting anode target is opposite to the cathode, and is used for generating X-rays under the bombardment of the second electron beam, and enabling the X-rays to pass through the transmitting anode target. According to the invention, the X-ray source can meet the requirements of the high throughput, large view field and high-quality imageobtaining of the X-ray source in an X-ray interference imaging system.
Owner:SHENZHEN UNIV
Encapsulating cover plate and application thereof in organic electroluminescence device
ActiveCN104409657AImprove exit efficiencyImprove viewing angleOLED manufacture/treatment processesSolid-state devicesRefractive indexEngineering
The invention belongs to the technical field of panel display, and discloses an encapsulating cover plate and application thereof in an organic electroluminescence device. The encapsulating cover plate uses a piece of photosensitive glass with photoinduced refractive index change or a transparent substrate provided with a transparent photosensitive material, interference pattern irradiation enables the photosensitive glass with photoinduced refractive index change or the transparent substrate provided with the transparent photosensitive material to present blended distribution of high and low refractive indexes, an original total reflection structure of the photosensitive glass or the transparent substrate is destroyed, and the light originally lost because of total reflection is reused after the light is reflected on the encapsulating cover plate, so that the dispersion effect of emergent light is improved, the emergent efficiency of the light and the angle of view are improved, and meanwhile, an effect of antireflection is achieved on the light in the external environment to a certain degree.
Owner:GUANGZHOU GOVISIONOX TECH CO LTD
Split-screen exit method and device, storage medium, and electronic device
ActiveCN108958629AImprove exit efficiencySimplified split screen exit operationInput/output processes for data processingComputer scienceScreen method
Owner:GUANGDONG OPPO MOBILE TELECOMM CORP LTD
LED chip structure of graphene structure and manufacturing method thereof
InactiveCN104300052AAlleviate problems such as horizontal expansion difficultiesAvoid epitaxial growthSemiconductor devicesQuantum efficiencyDoped graphene
The invention discloses an LED chip structure of a graphene structure and a manufacturing method of the LED chip structure. A nucleating layer, a non-doped GaN layer, an N-type doped GaN layer and an InGaN / GaN multiple-quantum-well structure are formed on a substrate in an epitaxial mode; after the multiple-quantum-well structure grows in the epitaxial mode, growth is stopped, and a P-type doped graphene layer is adopted for replacing a P-type GaN epitaxial layer; a P electrode is manufactured on the P-type doped graphene layer, the N-type doped GaN layer is formed through etching and an N electrode is manufactured on the N-type doped GaN layer; the P electrode is correspondingly arranged on the P-type doped graphene layer; an epitaxial wafer is etched, and the N electrode is manufactured on the N-type doped GaN layer. Through the LED chip structure of the graphene structure and the manufacturing method of the LED chip structure, maldistribution of In groups caused by P-GaN growing after the InGaN / GaN multiple-quantum-well structure through temperature rise can be avoided, and wavelength homogeneity can be improved easily; epitaxial growth of the P-GaN is avoided, cost is reduced, and productivity is improved; an ultrathin graphene layer high in light transmission and conductivity is adopted as a P-type current expanding layer, the light outgoing efficiency can be effectively improved, and the external quantum efficiency can be improved.
Owner:华芯半导体科技有限公司
Luminous diplay panel and its mfg. method
InactiveCN1519794AAnti-woundAvoid breakingElectroluminescent light sourcesSolid-state devicesAdhesiveMicro lens array
A light emitting display panel (12), comprises a transparent substrate (1) equipped with a light emitting element (5) on a first surface (1a) thereof, a second surface (1b) of the transparent substrate defining a display surface; and a microlens array (9) is disposed above the second surface of the transparent substrate (1). A method of manufacturing the light emitting display panel (12) comprises the step of adhering the microlens array (9) to the second surface (1b) of the transparent substrate (1) via adhesive (10).
Owner:SEIKO EPSON CORP
Backlight module device based on polarization light source
InactiveCN1862340AImprove utilization efficiencyImprove exit efficiencyNon-linear opticsLiquid-crystal displayOptical thin film
The present invention relates to a backlight module device based on polarization light source. Its structure includes the following several portions: base plate, polarization light source placed on said base plate and optical film placed on said polarization light source. It can be used as backlight illumination light source in liquid crystal display.
Owner:HUAZHONG UNIV OF SCI & TECH
Split screen exiting method and device, storage medium and electronic device
ActiveCN108920086ASimplify logoutImprove exit efficiencyInput/output processes for data processingComputer engineeringElectron device
The embodiment of the invention discloses a split screen exiting method and device, a storage medium and an electronic device. The split screen exiting method comprises the steps that in a split screen display state, the operation of moving a first split screen display window and a second split screen display window of a user is detected; according to the detected moving operation, the first splitscreen display window and the second split screen display window are moved; when it is detected that the first split screen display window and the second split screen display window are partially overlapped, window overlapping information between the first split screen display window and the second split screen display window is acquired; when the window overlapping information meets preset splitscreen exiting conditions, the split screen display state is exited. The split screen exiting efficiency can be improved by adopting the scheme.
Owner:GUANGDONG OPPO MOBILE TELECOMM CORP LTD
LED light-emitting structure and light-emitting spike with same
InactiveCN111256048ALower the altitudeIncrease design marginTraffic signalsRoad signsLight energyEngineering
The invention discloses an LED light-emitting structure and a spike with the same. The LED light-emitting structure comprises a transparent shell (1), an LED luminous body (2) with a light condensingelement, a separation body (3) and an air layer (4), the LED luminous body (2) is packaged in the transparent shell (1) through the separation body (3), light emitted by the LED luminous body (2) is mainly condensed by the condensing element, incident by an inner inclined surface (1b), refracted by a side wall with a certain thickness, emitted by an outer inclined surface (1a), emitted in the horizontal direction, mainly emitted in the upward direction and supplemented by emitted in the horizontal direction, and the LED luminous body (2) emits light in the horizontal direction to generate a local structure capable of generating upward displacement. The horizontal emergent light intensity ratio is high, the light energy utilization rate is high, the structural design allowance delta H and the power supply design allowance are improved, the structural strength is high, the forming process of the shell is facilitated, the light emitting intensity ratio in the horizontal direction and theupward direction are reasonably distributed so as to be more suitable for different emphasis points of vehicles and pedestrians, and the diversified requirements of roads are well met.
Owner:方显峰
Red light-emitting diode and preparation method
InactiveCN102751404AImprove exit efficiencyImproved reverse current characteristicsSemiconductor devicesChemical treatmentAluminium gallium indium phosphide
The invention relates to a red light-emitting diode. The red light-emitting diode comprises a GaAs substrate; an AlAs base layer is arranged on the GaAs substrate; a distributed bragg reflector is arranged on the AlAs foundation base layer; a n type restriction layer is arranged on the distributed bragg reflector, a multiple quantum well active region forming a core light emitting region of the light-emitting diode is arranged on the n-type restriction layer, and a p type restriction layer is arranged on the multiple quantum well active region; a P type window layer and a P type cap layer are arranged on the p type restriction layer, and the structure of the red light-emitting diode is formed through the interconnection of the layer structures. For the red light-emitting diode, an air interlayer is formed between the aluminium gallium indium phosphide distributed bragg reflector and the GaAs substrate so that the light penetrating through the bragg reflector are effectively reflected out, and the efficiency of light emergence is improved; and one-step chemical treatment is carried out on a cutting surface of a chip in the corrosion process, semiconductor residues remained on the cutting surface of the chip are etched off, and the reverse current characteristic in the electric current-voltage characteristics of the chip of the light-emitting diode is improved.
Owner:天津中环新光科技有限公司 +1
Preparation method and application of transparent electrode of ultraviolet light-emitting diode
ActiveCN107706278AImprove extraction efficiencyImprove exit efficiencyFrom chemically reactive gasesSemiconductor devicesOrganic chemicalsIndium
The invention discloses a metal organic chemical vapor deposition (MOCVD) preparation method a transparent electrode used for an ultraviolet LED. The preparation method is characterized in that a functional adjusting layer is firstly grown in situ before a deposited and doped indium tin oxide (ITO) serves as a main body layer. The invention also discloses how to grow the functional adjusting layerand the main body layer in situ, the functional adjusting layer and the main body layer are grown in sequence on the surface of an ultraviolet LED epitaxial wafer as a growth substrate material. Themethod comprises the following steps: growing a substrate for pretreatment; introducing one of an indium source and a tin source or a mixed source of the indium source and the tin source into the surface of the nitride-based ultraviolet LED epitaxial water to form the functional adjusting layer; and introducing an indium source, a tin source and an oxygen source onto the functional adjusting layerto grow an ITO film so as to form the main body layer. The ITO transparent conducting film provided by the invention applied onto the nitride-based ultraviolet LED device has the advantages of low positive working voltage, extremely high reliability and efficient light extraction efficiency, and the application of the ultraviolet photoelectric device can be greatly promoted.
Owner:SUN YAT SEN UNIV
A light guide component for a betavoltaic isotope battery
InactiveCN108877980AIncrease optical emission powerImprove exit efficiencyRadiation electrical energyFilm structureHigh reflectivity
The invention provides a light guide component for a betavoltaic isotope battery. The light guide component comprises a reflection film layer, a light-emitting material layer, a side surface high-reflectivity layer and a transmission film layer. The reflection film layer is close to an isotope battery radiation source; the transmission film layer is close to an isotope battery transducer; the light-emitting material layer is in the shape of a thin sheet; the reflection film layer is located on the upper surface of the light-emitting material layer; the side surface high-reflectivity layer is located at the side surface of the light-emitting material layer; the transmission film layer is located at the lower surface of the light-emitting material layer. The high-reflectivity layer, the sidesurface high-reflectivity layer and the transmission film layer all have a thickness less than 4 [mu]m. The reflection film layer, the side surface high-reflectivity layer and the transmission film layer are single-layer materials or film structures consisting of multi-layer materials. The light guide component integrates a light-emitting material and light guide means for a betavoltaic isotope battery, so that light from radioluminescence materials is emitted from one side in a directed manner with high efficiency and the light emission power per unit area of the light-emitting materials isincreased while the size of the light-emitting materials is not increased.
Owner:INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
Fluid sterilizing device
ActiveCN106362175AImprove exit efficiencyEasy to inactivateLavatory sanitoryRadiationMicro columnUltraviolet lights
The invention discloses a fluid sterilizing device. The fluid sterilizing device comprises a sterilizing unit. The sterilizing unit comprises an ultraviolet light guiding body, a first reflection piece for reflecting ultraviolet light towards the ultraviolet light guiding body and an ultraviolet generating device arranged between the ultraviolet light guiding body and the first reflection piece, and a plurality of micro-pore channels for fluid to pass through are formed in the ultraviolet light guiding body. The fluid is refined into tiny micro-columns through micro-pore columns, macroscopical fluid is divided into microcosmic columns, the microcosmic columns receive ultraviolet irradiation, ultraviolet light directly acts on bacteria in the fluid, the required dose is much smaller than the dose adopted during macroscopic illuminating, and the sterilizing efficiency is improved; as the micro-pore channels are formed in the ultraviolet light guiding body, the area of outlet light towards the micro-pore channels can be increased, the outgoing efficiency of ultraviolet light is improved, the bacteria in the fluid rapidly absorb more ultraviolet light and are damaged, the sterilizing efficiency is improved, and as the first reflection piece is arranged, the using rate of ultraviolet light is increased.
Owner:MAANSHAN JASON SEMICON CO LTD
Display panel and preparation method thereof
ActiveCN114220930AImprove the display effectImprove exit efficiencySolid-state devicesSemiconductor/solid-state device manufacturingEngineeringMaterials science
The invention relates to a display panel and a preparation method thereof. The display panel comprises an array substrate, a pixel limiting layer located on the array substrate and a light-emitting functional layer located on the side, away from the array substrate, of the pixel limiting layer, the pixel limiting layer comprises a plurality of pixel openings arranged in an array mode, and the light-emitting functional layer comprises a plurality of light-emitting elements. The light-emitting element comprises a first electrode, a light-emitting structure located on the first electrode and a second electrode located on the light-emitting structure, the second electrode is located on the side, away from the array substrate, of the first electrode, the first electrode is exposed out of the pixel openings, the pixel limiting layer further comprises a step-shaped groove located between every two adjacent pixel openings, and the step-shaped groove is located between every two adjacent pixel openings. The step-shaped groove is arranged in a gradually-shrinking mode in the direction towards the array substrate. According to the display panel, the light emitting efficiency is improved, and the display effect is improved.
Owner:CHANGSHA HKC OPTOELECTRONICS CO LTD +1
Micron-scale LED display device and manufacturing method capable of realizing light effect extraction and color conversion
ActiveCN108257949BSolving Optical Crosstalk ProblemsLarge luminous areaSolid-state devicesIdentification meansLED displayQuantum dot
Owner:FUZHOU UNIV
Light guide plate, light guide plate assembly, and surface illuminating device and liquid crystal display device using these
ActiveCN101473167BImprove utilization efficiencyUniform injectionMechanical apparatusPoint-like light sourceLiquid-crystal displayNon symmetric
A light guide plate, comprising a light exiting surface and a light entering end, has a shape in which its thickness perpendicular to the light exiting surface increases gradually as it is away from the light entering end and has scattering particles scattered therein. A light guide plate assembly comprises this guide plate, and a prism sheet in which a plurality of prisms are arranged in parallel with the apex angles of the prisms arranged facing the light exiting surface. A surface illuminating device comprises a light guide plate or a light guide plate assembly, and a liquid crystal display device comprises the surface illuminating device. The scattering particles scatter light entering at the light entering end and propagating through the inside and satisfy the following expression (1) and (2), and the apex angles of the prisms of the prism sheet satisfy the following expressions (3) and (4). (F is scattered sectional area, NP is particle density, LG is length of guide plate along incident direction, KC is correction coefficient, phi is apex angle of symmetric prism, and theta1 and theta2 are two apex angles divided by perpendicular of non-symmetric prism.) 1.1<=FNPLGKC<=8.2 --- (1), 0.005<=KC<=0.1 --- (2), 55 DEG<=theta<=80 DEG --- (3), 0 DEG<= theta1<= 15 DEG and 30 DEG<= theta2<= 45 DEG --- (4).
Owner:FUJIFILM CORP
Key light guide device and method and aerosol generating device
PendingCN112490038AImprove user experienceUniform luminous effectElectric switchesLight guideFluorescence
The invention relates to the field of aerosol generating devices, and particularly discloses a key light guide device and method and an aerosol generating device. A transparent support and a first light source are arranged in a shell, and a light guide piece and a key are arranged in a mounting hole in the shell, so that the first light source in the shell emits light and then passes through the support; the support absorbs light based on the fluorescent substance and the transparent material and then refracts and reflects the light, the light guide piece can absorb the corresponding light based on self-illumination of the support, the light guide piece emits light to illuminate an annular area formed by the side face of the key, and a user can rapidly find the key located in the center ofthe light guide piece based on observation of the annular light guide piece. The position of the key is prevented from being mistakenly touched and found in the dark, and the use experience of a useris improved. The light is uniformly diffused based on the fluorescent substance in the support, and the bracket emits uniform light into the light guide piece, so that the light guide piece is more uniform in light emitting effect, the lighting effect is improved, and the light source utilization rate is increased.
Owner:SHENZHEN JIYOU TECH CO LTD
LED chip modularized packaging method
ActiveCN105789389AAvoid damageAvoid absorptionSolid-state devicesSemiconductor devicesLead bondingEngineering
The invention provides an LED chip modularized packaging method comprising the steps that a packaging substrate is provided, and insulation processing is performed on the surface of the packaging substrate; a hole groove used for placing a chip is formed in the packaging substrate; a reflecting layer is electroplated on the bottom part and the side walls of the hole groove; solid crystal glue is coated on the bottom part of the hole groove; the chip is installed on solid crystal glue of the bottom part of the hole groove; silica gel is coated on the packaging substrate and a copper plate covers silica gel, and the copper plate is flattened; a lead hole is formed in the corresponding silica gel and the copper plate above the chip; conductive metal is filled in the lead hole and residual conductive metal on the surface of the copper plate is removed; welding holes are formed in the copper plate through the photolithography and etching technology; and welding balls are formed in the welding holes. Damage of high temperature of the conventional reflow welding technology to the chip can be avoided, the problem that lead bonding is not firm due to the welding technology can be solved and cost can be reduced, and thus the method is suitable for large-scale production.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Modular packaging method for led chips
ActiveCN105789389BAvoid damageAvoid absorptionSolid-state devicesSemiconductor devicesLead bondingEngineering
The invention provides a modular packaging method for LED chips, comprising: providing a packaging substrate, and insulating the surface of the packaging substrate; forming a hole for placing the chip in the packaging substrate; Plating the reflective layer on the wall; coating the crystal-bonding glue at the bottom of the hole; installing the chip on the crystal-bonding glue at the bottom of the hole; coating the silica gel on the packaging substrate, and covering the copper plate on the silica gel to flatten the copper plate ; Form lead holes in the silica gel and copper plates corresponding to the top of the chip; fill the lead holes with conductive metal, and remove excess conductive metal on the surface of the copper plate; form soldering openings in the copper plate through photolithography and etching processes; Welding balls are formed in the welding holes; the invention avoids the damage to the chip caused by the high temperature of the traditional reflow soldering process, solves the problem of weak wire bonding caused by the soldering process, reduces the cost, and is suitable for large-scale production.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
A resonant cavity and single photon source system for generating single photons
ActiveCN113067238BHigh purityImprove exit efficiencyOptical resonator shape and constructionActive medium shape and constructionResonant cavityGrating
The invention discloses a resonant cavity for generating single photons, which includes: a resonant cavity and a substrate, the resonant cavity includes an upper reflective layer, a lower reflective layer and a The sandwich structure formed by the grating layer, the upper reflective layer and the lower reflective layer adopt metal thin film or metal-like thin film, the grating layer is provided with a grating microstructure to form an optical microcavity, and the substrate is arranged in the resonant cavity The bottom of the substrate, the substrate is a truncated inverted cone substrate, and the surface of the substrate in contact with the lower reflective layer is provided with a two-dimensional superstructure for improving reflection efficiency; and includes the resonant cavity and the excitation light generation system A single-photon source system, the excitation light generation system emits the excitation photons generated by it into the resonant cavity, and the excitation photons are emitted from the resonant cavity after multiple reflections in the grating microstructure .
Owner:CHINA JILIANG UNIV
Preparation method and application of transparent electrode for ultraviolet light-emitting diode
ActiveCN107706278BEffectively scale outLower specific contact resistanceFrom chemically reactive gasesSemiconductor devicesPhysical chemistryIndium tin oxide
The invention discloses a metal organic chemical vapor deposition (MOCVD) preparation method a transparent electrode used for an ultraviolet LED. The preparation method is characterized in that a functional adjusting layer is firstly grown in situ before a deposited and doped indium tin oxide (ITO) serves as a main body layer. The invention also discloses how to grow the functional adjusting layerand the main body layer in situ, the functional adjusting layer and the main body layer are grown in sequence on the surface of an ultraviolet LED epitaxial wafer as a growth substrate material. Themethod comprises the following steps: growing a substrate for pretreatment; introducing one of an indium source and a tin source or a mixed source of the indium source and the tin source into the surface of the nitride-based ultraviolet LED epitaxial water to form the functional adjusting layer; and introducing an indium source, a tin source and an oxygen source onto the functional adjusting layerto grow an ITO film so as to form the main body layer. The ITO transparent conducting film provided by the invention applied onto the nitride-based ultraviolet LED device has the advantages of low positive working voltage, extremely high reliability and efficient light extraction efficiency, and the application of the ultraviolet photoelectric device can be greatly promoted.
Owner:SUN YAT SEN UNIV
Fluid Sterilization Device
ActiveCN106362175BImprove exit efficiencyEasy to inactivateLavatory sanitoryRadiationMicro columnUltraviolet lights
The invention discloses a fluid sterilizing device. The fluid sterilizing device comprises a sterilizing unit. The sterilizing unit comprises an ultraviolet light guiding body, a first reflection piece for reflecting ultraviolet light towards the ultraviolet light guiding body and an ultraviolet generating device arranged between the ultraviolet light guiding body and the first reflection piece, and a plurality of micro-pore channels for fluid to pass through are formed in the ultraviolet light guiding body. The fluid is refined into tiny micro-columns through micro-pore columns, macroscopical fluid is divided into microcosmic columns, the microcosmic columns receive ultraviolet irradiation, ultraviolet light directly acts on bacteria in the fluid, the required dose is much smaller than the dose adopted during macroscopic illuminating, and the sterilizing efficiency is improved; as the micro-pore channels are formed in the ultraviolet light guiding body, the area of outlet light towards the micro-pore channels can be increased, the outgoing efficiency of ultraviolet light is improved, the bacteria in the fluid rapidly absorb more ultraviolet light and are damaged, the sterilizing efficiency is improved, and as the first reflection piece is arranged, the using rate of ultraviolet light is increased.
Owner:MAANSHAN JASON SEMICON CO LTD
Split-screen exit method, device, storage medium and electronic equipment
ActiveCN108920086BSimplify logoutImprove exit efficiencyInput/output processes for data processingComputer hardwareComputer graphics (images)
The embodiment of the present application discloses a split-screen exit method, device, storage medium, and electronic equipment; the method includes: when in the split-screen display state, detecting that the user has targeted the first split-screen display window and the second split-screen display window move operation; move the first split-screen display window and the second split-screen display window according to the detected move operation; when the first split-screen display window and the second split-screen display window are detected When the windows partially overlap, obtain the window overlap information between the first split-screen display window and the second split-screen display window; when the window overlap information meets the preset split-screen exit condition, exit the split-screen display state . This solution can improve the efficiency of split-screen exit.
Owner:GUANGDONG OPPO MOBILE TELECOMM CORP LTD
A kind of semiconductor light-emitting diode and its manufacturing method
ActiveCN106848013BImprove luminous efficiencyImprove light output efficiencyNanoopticsSemiconductor devicesElectrical conductorQuantum well
The invention discloses a semiconductor light emitting diode and manufacturing method thereof. The structure and the semiconductor light emitting diode manufactured by adopting the manufacturing method can improve the light emitting efficiency and the light emitting strength. To achieve the purpose, the semiconductor light emitting diode comprises a substrate, a buffering layer and a first semiconductor layer with a first conductivity type, and a multi-quantum well has an active layer of a V-shaped pit, a Al quantum dot / a AlN nanorod / a Ga quantum dot / a GaN nanorod with a multi-cycle, a second semiconductor layer of a second conductivity layer and a contact layer; the portion of V-shaped pits corresponding to the lower surface, the center and the upper surface of the quantum well of the active layer has the Al quantum dot / the AlN nanorod / the Ga quantum dot, and the thickness in each cycle is identical to that of the quantum well; the portion of the V-shaped pit of a barrier layer of the quantum well has a GaN nanorod, and the thickness of each cycle is identical to the barrier layer.
Owner:JIANGSU BAO PU LAY SEMICON
Making method for non image element remote infrared upper transformation imaging device with reflector
InactiveCN101079455AEfficient far-infrared imagingImprove exit efficiencyFinal product manufactureSemiconductor devicesEffect lightFar infrared
The invention discloses a transform image-forming device on no image element far infrared with the reflector and manufacturing method, which comprises the following steps: (1) determining that the detector type is a gallium arsenide homojunction far infrared detector and DBR reflector at the top and the bottom of the lighting diode is the cyclical structure of gallium arsenide layer and aluminum gallium arsenic layer; (2) optimizing the parameter of the top and bottom DBR reflector and the lighting diode according to the standing wave effect with the electromagnetic wave vector resolution method; (3) developing the gallium arsenide homojunction far infrared detector with the molecular beam epitaxy device and developing the top DBR reflector, gallium arsenide and aluminum gallium arsenic lighting diode, the bottom DBR reflector sequentially on the basis, getting the transform image-forming device on no image element far infrared with the reflector. The invention improves the efficiency of far infrared transform image-forming, which lays the groundwork for the general application of the mature semiconductor transform image-forming.
Owner:SHANGHAI JIAO TONG UNIV
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