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Making method for non image element remote infrared upper transformation imaging device with reflector

A manufacturing method, far-infrared technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems that have not been found in the same or similar literature reports, so as to improve photon emission efficiency, improve imaging efficiency, The effect of high-efficiency far-infrared imaging

Inactive Publication Date: 2007-11-28
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

[0004] In further searches, no literature reports identical or similar to the subject of the present invention have been found

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  • Making method for non image element remote infrared upper transformation imaging device with reflector

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Embodiment Construction

[0014] The embodiments of the present invention are described in detail below: this embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation methods and processes are provided, but the protection scope of the present invention is not limited to the following embodiments.

[0015] (1) It is determined that the pixelless far-infrared up-conversion imaging device with mirrors is obtained by integrating gallium arsenide homojunction far-infrared detectors in series with gallium arsenide and aluminum gallium arsenide light-emitting diodes. Add DBR reflectors to the top and bottom of the LEDs. Determine that the DBR mirror to be grown is a periodic structure of alternately grown GaAs layers and AlGaAs layers. According to the characteristics of the DBR mirror, since the emission wavelength of the GaAs and AlGaAs light-emitting diodes is about 880nm, therefore Both the GaAs layer and the AlGaAs layer should be 220nm t...

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Abstract

The invention discloses a transform image-forming device on no image element far infrared with the reflector and manufacturing method, which comprises the following steps: (1) determining that the detector type is a gallium arsenide homojunction far infrared detector and DBR reflector at the top and the bottom of the lighting diode is the cyclical structure of gallium arsenide layer and aluminum gallium arsenic layer; (2) optimizing the parameter of the top and bottom DBR reflector and the lighting diode according to the standing wave effect with the electromagnetic wave vector resolution method; (3) developing the gallium arsenide homojunction far infrared detector with the molecular beam epitaxy device and developing the top DBR reflector, gallium arsenide and aluminum gallium arsenic lighting diode, the bottom DBR reflector sequentially on the basis, getting the transform image-forming device on no image element far infrared with the reflector. The invention improves the efficiency of far infrared transform image-forming, which lays the groundwork for the general application of the mature semiconductor transform image-forming.

Description

technical field [0001] The invention relates to a method in the technical field of semiconductor photodetection, in particular to a method for manufacturing a pixelless far-infrared up-conversion imaging device with a mirror. Background technique [0002] Far-infrared detection imaging has broad application prospects in astrophysics, biomedicine, and new material exploration. Due to technical difficulties in far-infrared imaging, expensive far-infrared detectors, and complex readout circuits, far-infrared detection imaging is only used for special purposes. Through the integrated structure of the low-cost gallium arsenide homojunction far-infrared detector and the gallium arsenide and aluminum gallium arsenide light-emitting diode, under the far-infrared light radiation, the resistance of the detector decreases, causing the voltage on the light-emitting diode to increase, making the light emitting diode The diode emits near-infrared light that can be detected by a silicon c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 沈文忠武乐可郝惠莲
Owner SHANGHAI JIAO TONG UNIV
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