The invention provides a manufacturing method for stepped silicon germanium source / drain structures, which includes firstly, providing a silicon substrate, wherein a grid structure, first gap walls on two sides of the grid structure and second gap walls on two sides of each first gap wall are formed on the silicon substrate, secondly, performing multiple times of ion implantation technology by different directions and depths to form a first amorphous state region in the silicon substrate on two sides of each second gap wall and form at least one second amorphous state region in the silicon substrate below the second gap walls, thirdly, removing the second gap walls, fourthly, removing the first amorphous state regions and the second amorphous state regions to form a stepped recess, and fifthly, forming a doped stepped silicon germanium source / drain structure in the stepped recess. Compared with the prior art, the manufacturing method for stepped silicon germanium source / drain structures can reduce etching procedures and lower control difficulty of the etching process.