145results about How to "Reduce photolithography process" patented technology

The invention provides a method for making a quantum dot color film. The method for making the quantum dot color film comprises photoetching transparent organic photoresistive material to form a blue sub-pixel portion of a quantum dot color film, making a transparent organic photoresistive layer hydrophobic, coating a green quantum dot curing glue and a red quantum dot photoresist on corresponding areas in order with the help of hydrophobicity to obtain a green quantum dot curing glue layer and a red quantum dot photoresist layer on the same in order, photoetching a portion of red quantum dot photoresist layer to obtain a green sub-pixel portion and a red sub-pixel portion of the quantum dot color film. Compared with a conventional method for making a quantum dot color film, one photoetching process can be reduced, the making process can be greatly simplified, the cost can be reduced, the production efficiency can be raised, only one kind of quantum pot photoetching glue needs developing, and the difficulty and cost of development are reduced.

The invention discloses a method for manufacturing a color filter substrate. The method comprises the following steps of providing a substrate (10); forming a light shielding portion (12) on the substrate (10); forming a color filter, which comprises a colorful portion (14) and an opening portion (16), on the substrate (10); covering the substrate (10) by using a flat layer (18) which is filled in the opening portion (16); photoetching the flat layer (18); and forming a spacer (24) on the photoetched flat layer (18). A transparent light resistance layer is filled in the opening portion and serves as a white light resistor, and the surface of the transparent light resistance layer is flattened by using a photoetching technology. Compared with the prior art, the method for manufacturing the color filter substrate has the advantages that a white color resistor photoetching manufacture procedure is omitted, the transparent light resistance layer on the opening portion cannot be sunken, irregularity of the surface of the transparent light resistance layer is avoided, and the display quality of a manufactured liquid crystal display panel is improved.

The invention provides a three-dimensional nonvolatile memory array and a preparation method thereof, and belongs to the technical field of a nonvolatile memory in the manufacturing technology of super-large-scale integration. The three-dimensional nonvolatile memory array comprises a substrate and a bottom electrode / isolation medium stack structure; a deep groove is etched on the bottom electrode / isolation medium stack structure; a variable-resistance material and a top electrode layer are deposited on the side wall of the deep groove; the bottom electrode and the top electrode are crossed on the side wall of the deep groove; and a variable-resistance material is arranged between the cross points; each cross point forms a variable-resistance memory unit; all the variable-resistance memory units form a three-dimensional variable-resistance memory array; and the three-dimensional variable-resistance memories in the array are isolated by the isolation medium layer. The invention can improve the storage density of the variable-resistance memory, while simplifying the process and reducing the process cost.

The invention discloses a micro-hemispherical resonant gyroscope based on borosilicate glass annealing forming and a manufacturing method thereof. A silicon wafer serves as a substrate to form a silicon substrate. A cylindrical cavity and a center supporting column in the circle center of the cavity are etched on the upper surface of the silicon wafer. The center supporting column is connected with the center of a hemispherical harmonic oscillator to form a suspended structure. Meanwhile, eight flat-plate electrodes are evenly distributed around the hemispherical harmonic oscillator and on the periphery of the cylindrical cavity of the upper surface of the silicon wafer. The eight flat-plate electrodes are composed of four drive electrodes and four detection electrodes, all the drive electrodes, the detection electrodes and the hemispherical harmonic oscillator are not in contact and have same gaps, and the drive electrodes and the detection electrodes are sequentially distributed at intervals. The glass metal blowing type micro-hemispherical resonant gyroscope manufactured through the method has stable performance and a wider application range because of the advantages of being simple in structure, low in surface stress, high in symmetry and the like.

The invention provides a TFT (thin film transistor) backboard manufacturing method and a TFT backboard structure. The TFT backboard manufacturing method includes steps of 1, providing a substrate (20) with a grid electrode (21), an insulation layer (22) and a semiconductor layer (23); 2, continuously filming to sequentially form a second metal layer, a reflecting electrode layer and a conductive oxide layer on the substrate (20); 3, subjecting the second metal layer, the reflecting electrode layer and the conductive oxide layer to photoetching processing so as to pattern the same, respectively forming source / drain electrodes (253), reflecting electrodes (252) and pixel electrodes (251) and connecting the source / drain electrodes (253) with the semiconductor layer (23); 4, forming a protecting layer on the source / drain electrode (253), the reflecting electrodes (252) and the pixel electrodes (251); 5, forming a flat pixel definition layer (27) on the protecting layer (26); 6, forming a photoresistance spacer (28) on the flat pixel definition layer (27).

Disclosed is a display device provided with: a plurality of stripe-shaped data electrodes (3) which are formed on a first substrate (1) and which extend in the vertical direction; a plurality of scanning lines (11) and a plurality of reference signal lines (12) which are formed on the second substrate (2) and which extend in the horizontal direction; a plurality of pixel electrodes (10) which are formed on the second substrate (2) and which are arranged in the form of a matrix; a plurality of switching elements (T1) which are formed on the second substrate (2), turns on or off by means of the plurality of scanning lines (11), and is disposed between the plurality of reference signal lines (12) and the plurality of pixel electrodes (10); and an oxide semiconductor layer (22) which is disposed between a source electrode (21) and a drain electrode (20). The oxide semiconductor layer (22) is formed with the switching elements (T1) with an insulating layer (23) therebetween in the vicinity of a gate electrode (11a), and is provided with the pixel electrodes (10) which are connected to the source electrode (21) or the drain electrode (20). The source electrode (21) or the drain electrode (20) that is connected to the pixel electrode (10) is formed from the same material as the pixel electrode (10). The source electrode (21) and the drain electrode (20) are formed from a film which was formed at the same time.

It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

The invention provides a transflective liquid crystal device and an electronic apparatus using the same which do not cause a non-uniformity in the substrate gap, even though a layer-thickness adjusting layer is formed so that the layer thickness balance of a liquid crystal layer between a transmission display region and a reflection display region is optimized thereby. Below a counter electrode of a counter substrate of a transflective liquid crystal device, a color filter for transmission display, being thin and having a wide chromaticity region, is formed in a transmission display region, and a color filter for reflection display, being thick and having a narrow chromaticity region, is formed in a reflection display region. Further, the interval between a TFT array substrate and the counter substrate is adjusted by a columnar protrusion formed on the TFT array substrate, and a gap material is not dispersed between the TFT array substrate and the counter substrate.