Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for making quantum dot color film

一种量子点、红色量子点的技术,应用在量子点彩膜的制备领域,能够解决量子点层图形化、制程繁琐、不能大规模生产等问题,达到降低难度和成本、提高生产效率、降低成本的效果

Active Publication Date: 2016-01-13
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF8 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the patent CN102944943A and the patent US20150002788A1 both proposed a technical solution to replace the color filter film (ColorFilter) with a patterned quantum dot layer to achieve the purpose of color display, but these patents did not carry out the method of patterning the quantum dot layer. illustrate
[0004] When making quantum dot patterns in existing quantum dot display devices, usually red, green, and blue quantum dot materials are mixed with red, green, and blue quantum dot photoresists correspondingly, and then exposed and developed to form Quantum dot graphics, but this method requires red, green, and blue quantum dots to be mixed with red, green, and blue quantum dot photoresists in advance, and three photolithography processes are required, which is cumbersome and requires at least Simultaneously develop red and green quantum dot photoresist, the development of quantum dot photoresist is difficult
In addition to the above methods, quantum dot graphics can also be produced by transfer printing, screen printing, etc., but the resolution of the quantum dot graphics obtained by the transfer printing method is not high, the edges of the graphics are jagged, and the quantum dot layer and the matrix Adhesion needs to be improved; while the method of inkjet printing to form a patterned quantum dot layer has high requirements on inkjet printing equipment, how to ensure the stability of inkjet ink droplets and printing accuracy still has technical barriers, and it still cannot be mass-produced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making quantum dot color film
  • Method for making quantum dot color film
  • Method for making quantum dot color film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0035] see Figure 1-8 , the invention provides a kind of preparation method of quantum dot color film, comprises the following steps:

[0036] Step 1, such as figure 2 As shown, a substrate 1 is provided, and the substrate 1 includes several blue sub-pixel regions, green sub-pixel regions, and red sub-pixel regions; a layer of transparent organic photoresist material is coated on the substrate 1 to form a transparent organic Photoresist layer 2;

[0037] Specifically, the step 1 also includes, before coating a layer of transparent organic photoresist material, forming a black matrix 5 on the substrate 1 through a photolithography process; the black matrix 5 divides the blue sub-pixel area , the green sub-pixel area, and the red sub-pixel ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for making a quantum dot color film. The method for making the quantum dot color film comprises photoetching transparent organic photoresistive material to form a blue sub-pixel portion of a quantum dot color film, making a transparent organic photoresistive layer hydrophobic, coating a green quantum dot curing glue and a red quantum dot photoresist on corresponding areas in order with the help of hydrophobicity to obtain a green quantum dot curing glue layer and a red quantum dot photoresist layer on the same in order, photoetching a portion of red quantum dot photoresist layer to obtain a green sub-pixel portion and a red sub-pixel portion of the quantum dot color film. Compared with a conventional method for making a quantum dot color film, one photoetching process can be reduced, the making process can be greatly simplified, the cost can be reduced, the production efficiency can be raised, only one kind of quantum pot photoetching glue needs developing, and the difficulty and cost of development are reduced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a preparation method of a quantum dot color film. Background technique [0002] With the continuous development of display technology, people have higher and higher requirements for display quality of display devices. Quantum dots (Quantum Dots, referred to as QDs) are usually spherical or quasi-spherical semiconductor nanoparticles composed of II-VI or III-V group elements, and the particle size is generally between a few nanometers and tens of nanometers. Because the particle size of QDs is smaller than or close to the exciton Bohr radius of the corresponding bulk material, a quantum confinement effect will be generated, and its energy level structure will change from the quasi-continuous structure of the bulk material to the discrete structure of the quantum dot material, resulting in QDs showing special properties of stimulated emission of light. As the size of QDs decreas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1335
CPCG03F7/0007G02B5/201G02B5/207G02F1/133514G02F1/133516G02F2202/36G02F1/133512
Inventor 梁宇恒
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products