33results about How to "Enhanced tunneling effect" patented technology

The invention relates to the field of solar cells, and provides a single crystal silicon cell and a preparation method thereof. The preparation method comprises the following steps: sequentially adopting a texturing process, a diffusion process and an etching process to treat the silicon substrate; depositing SiO on the front side of the silicon substrate 2 1. Coating the back side to obtain a processed silicon substrate; using a mask method to selectively sputter silver on the first predetermined area on the front side of the processed silicon substrate to form sputtering pits deposited with a silver-silicon doped layer ; remove the mask on the front side of the processed silicon substrate; carry out screen printing on the silver-silicon doped layer to form silver electrode grid lines; use mask method to selectively remove the first preset on the front side of the processed silicon substrate A SiNx layer is deposited in areas other than the area; and the processed silicon substrate deposited with the SiNx layer is sintered. The invention avoids the problem of large carrier recombination caused by the direct contact between the silver electrode grid line and the silicon substrate, and improves the open-circuit voltage, short-circuit current and photoelectric conversion efficiency of the monocrystalline silicon battery.

The invention discloses a lattice mismatch solar cell containing a novel tunneling junction and a preparation method thereof. A Ge monocrystal is used as a substrate, and a GaInP nucleation layer, a GaInAs buffer layer, a lattice gradient buffer layer, a first novel tunneling junction, a GaInAs sub cell, a second novel tunneling junction and a GaInP sub cell are grown on the surface of the substrate sequentially from bottom to top. The first novel tunneling junction and the second novel tunneling junction include a layer of degenerate p-type gallium indium nitrogen arsenide (Ga<1-y>In<y>N<x>As<1-x>) and a layer of degenerate n-type gallium indium arsenide (Ga<1-z>In<z>As), the lattice constants of the two layers of materials are respectively consistent with the materials of the adjacent semiconductor layers or the mismatching degree is less than 3%, and the thickness of each layer is 5-100nm. The novel tunneling junction adopted in the invention has better conductivity and light transmission than general tunneling junctions. More importantly, as a rigid material, the novel tunneling junction can filter a lot of threading dislocation and mismatch dislocation, reduce non-radiative recombination, prolong the service life of minority carriers and improve the photoelectric conversion efficiency.

The present invention provides a non-volatile memory and a manufacturing method for the same. A floating gate structure of the non-volatile memory is located on one side of a word line structure, and includes a second gate dielectric layer and a second conductive layer in sequence from bottom to top. The second conductive layer has a first sharp portion, a second sharp portion, and a sharp depression portion located between the two sharp portions. An erasing gate structure is located above the floating gate structure, and includes a tunneling dielectric layer and a third conductive layer in sequence from bottom to top. The tunneling dielectric layer covers tip parts of the first and second sharp portions, and is filled into the sharp depression portion. The third conductive layer has a third sharp portion at a position corresponding to the sharp depression portion.

The present invention relates to a fast turn-on floating island device and its manufacturing method in the field of semiconductor technology, comprising a surface layer, a bottom layer and a drift region, the drift region includes several groups of substrate layers and several groups of floating island layers, and each group of substrate layers A group of floating island layers is arranged between the bottom layer, or a group of substrate layers is arranged between every two groups of floating island layers, and a heavily doped inversion region is arranged in the floating island layer, which has the advantage of eliminating the obstruction of space charge to current , to alleviate the problem that the floating island device with the opposite type doped region in the drift region cannot recover the conduction ability under a lower bias voltage.

The present invention provides a non-volatile memory and a manufacturing method for the same. In the non-volatile memory, a floating gate structure has a first sharp portion and a second sharp portion, and a corner formed by a side surface of the floating gate structure and a part of a top surface of the floating gate structure is not covered by a control gate structure. The corner is connected between the first sharp portion and one end of the second sharp portion. A tunneling dielectric layer of an erasing gate structure covers the first sharp portion, the second sharp portion, and a tip part of the corner.

The invention discloses a multi-claw drill suitable for loosening earth surface soil texture formed holes. The multi-claw drill comprises a drill bit body and a drill handle. Front claws are arranged on the front portion of the drill bit body, middle claws are arranged on the periphery of the middle of the drill bit body, and rear claws are arranged on the periphery of the drill bit body and close to the drill handle. The distance between the top end of the each rear claw and the axis of the drill bit body is larger than that between the top end of each middle claw and the axis of the drill bit body. The distance between the top end of each middle claw and the axis of the drill bit body is larger than that between the top end of each front claw to the axis of the drill bit body. The front claws, the middle claws and the rear claws are axially arranged on the drill bit body in a staggered mode. According to the multi-claw drill suitable for loosening the earth surface soil texture formed holes, the front claws have positioning and guiding functions in the drilling process, the middle claws have the heading hole-forming function, and the rear claws have the function of expanding the holes. The defect that a single-layer drill claw is only suitable for forming holes in surface layer hard rock and soil is overcome, due to the fact that the drill claws are layered and staggered, the heading performance of the drill claws is greatly improved, and construction quality and construction work efficiency are greatly improved in the construction work of slope support and hole forming of the loose earth surface soil texture.