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P-GaN ohmic contact electrode and preparation method and application thereof

A technology of ohmic contact electrodes and p-gan, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc. It can solve the problems that it is difficult to increase the hole concentration of p-GaN materials, and it is difficult to achieve ohmic contact than contact resistivity. , to achieve the effect of improving electrical properties and reducing specific contact resistivity

Pending Publication Date: 2020-02-21
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large work function of the p-GaN material (7.5eV), there is no suitable metal to form an excellent ohmic contact; the hole concentration of the Mg-doped p-GaN material is difficult to increase, and the ohmic contact ratio of the p-GaN material has always been higher than the contact resistivity. It is difficult to achieve 10 of n-GaN material -6 ~10 -8 cm 2 s level

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  • P-GaN ohmic contact electrode and preparation method and application thereof
  • P-GaN ohmic contact electrode and preparation method and application thereof

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preparation example Construction

[0039] see figure 2 , a method for preparing a p-GaN ohmic contact electrode according to an embodiment of the present invention, comprising the following steps:

[0040] 1) Clean the p-GaN material by standard cleaning organic and inorganic cleaning process. After cleaning, N 2 blow dry;

[0041] 2) Depositing Mg metal on the p-GaN material cleaned in step 1), and performing high-temperature annealing treatment to obtain a sample after high-temperature annealing treatment;

[0042] 3) After the high-temperature annealing sample is cleaned by HCl and HF, the residual Mg metal on the surface is removed, and a highly doped p-GaN region is formed under the Mg metal region, that is, a p-GaN heavily doped layer;

[0043] 4) In the highly doped p-GaN region, deposit the bottom contact metal and the upper cap metal in sequence, and perform annealing treatment to form a good ohmic contact.

[0044] Preferably, the deposition method of Mg metal in step 2) is thermal evaporation, elec...

Embodiment 1

[0049] A method for preparing a p-GaN ohmic contact electrode according to an embodiment of the present invention includes the following steps:

[0050] 1) Spin-coat a layer of AZ5214 photoresist on the surface of the p-GaN material after cleaning, bake the p-GaN sample with the spin-coated photoresist at 95°C for 90 seconds, and use the designed mask plate for ultraviolet lithography Expose for 4s, develop for 30s to remove the exposed photoresist, leaving a window for depositing Mg metal;

[0051] 2) Place the p-GaN sample after photolithography in the electron beam evaporation equipment, and pump the background vacuum to 5×10 -4 After Pa, 10 nm of Mg metal was deposited on the surface of the sample, and the deposition method was thermal evaporation. Take out the p-GaN sample that has been deposited, soak it in N-methylpyrrolidone (NMP) solution, and put it in a water bath at 120°C for 5 minutes, and then ultrasonically peel off the metal outside the exposed area to obtain ...

Embodiment 2

[0058] A method for preparing a p-GaN ohmic contact electrode according to an embodiment of the present invention includes the following steps:

[0059] 1) Place the cleaned p-GaN material in plasma-enhanced vapor-phase chemical deposition (PECVD), and deposit a layer of 20nm SiO on its surface 2 ;

[0060] 2) Containing SiO 2 Spin-coat a layer of AZ5214 photoresist on the surface of the p-GaN material, bake the p-GaN sample with the spin-coated photoresist at 95°C for 90 seconds, use the designed mask to expose to ultraviolet lithography for 4s, and develop 30s to remove the exposed photoresist;

[0061] 3) Harden the photolithographic sample on a hot plate at 120°C for 120 seconds, soak in 5:1 BOE buffer for 30 seconds to remove the exposed SiO 2 , open the Mg metal deposition window;

[0062] 4) The p-GaN sample containing the Mg metal window was placed in the sputtering process, and the background vacuum was evacuated to 5×10 -4 After Pa, deposit 1 nm of Mg metal on t...

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Abstract

The invention discloses a p-GaN ohmic contact electrode and a preparation method and an application thereof. The p-GaN ohmic contact electrode comprises a p-GaN material layer which is provided with aheavily doped p-GaN layer. A bottom contact metal layer is formed on the heavily doped p-GaN layer. An upper cap metal layer is formed on the bottom contact metal layer. In the heavily doped p-GaN layer, the doping concentration of Mg is greater than or equal to 1*10<20>cm<-3>. The p-GaN ohmic contact electrode provided by the invention has the ohmic contact characteristic of low specific contactresistivity.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and devices, in particular to a p-GaN ohmic contact electrode and its preparation method and application. Background technique [0002] The first generation of Si and Ge semiconductors brought mankind into the information age, and at the same time drove the intelligence and informatization of electronic systems. The second-generation semiconductors (GaAs, InP, MCT, etc.) have brought us optoelectronic devices, power electronic devices, radio frequency electronic devices, and space radiation-resistant devices, which have triggered revolutions in information fields such as wireless communications and optical communications. [0003] The third-generation semiconductor GaN has excellent semiconductor characteristics such as wide bandgap, high breakdown, and high frequency; compared with Si-based semiconductors, the breakdown field strength of GaN materials is more than 10 times higher,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/45H01L21/28H01L31/0224H01L33/40H01S5/042
CPCH01L29/452H01L29/401H01L21/28H01L31/0224H01L33/40H01S5/0425
Inventor 王玮王宏兴张明辉问峰林芳陈根强
Owner XI AN JIAOTONG UNIV
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