Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for forming ohmic contact of (100) oriented n-type single crystal diamond electrode

A single crystal diamond, ohmic contact technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high contact resistivity, difficult ohmic preparation, etc., to achieve lower specific contact resistivity, lower requirements, and good ohmic contact Effect

Active Publication Date: 2020-11-17
XI AN JIAOTONG UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a (100) orientation n-type single crystal diamond electrode ohmic contact forming method to solve the problems in the prior art that (100) orientation n-type single crystal diamond ohmic preparation is difficult and the specific contact resistivity is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for forming ohmic contact of (100) oriented n-type single crystal diamond electrode
  • A method for forming ohmic contact of (100) oriented n-type single crystal diamond electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as figure 1 , a (100) oriented n-type single crystal diamond electrode ohmic contact forming method, (100) oriented n-type single crystal diamond 1 is a self-supporting body material with a size of 3 × 3 × 0.3mm 3 , with a surface roughness of 1 nm. A 10nm-thick n-type diamond epitaxial thin layer 2 was epitaxially grown on its surface by MPCVD, and the growth conditions were: air pressure 100 Torr, gas flow rate 500 sccm, CH 4 / H 2 = 1%, PH 3 / CH 4 =0.1%, and the substrate temperature was 900°C. After the growth, the sample was placed in a 1:1 mixture of sulfuric acid and nitric acid, heated at 250 °C for 1 h to convert the surface hydrogen terminals into oxygen terminals, and annealed at 900 °C for 5 min to obtain a highly conductive diamond surface 3. Through photolithography, magnetron sputtering, and lift-off processes, W metal electrodes 4 are prepared on the high-conductivity diamond surface 3, and then annealed at 400° C. for 10 minutes in an argon atm...

Embodiment 2

[0033] Such as figure 1 , a (100) orientation n-type single crystal diamond electrode ohmic contact forming method, (100) orientation n-type single crystal diamond 1 is a single crystal thin film, the size is 10 × 10 × 0.001mm 3 , with a surface roughness of 2nm. The n-type diamond epitaxial thin layer 2 with a thickness of 100nm is epitaxially grown on its surface by MPCVD method, and the growth conditions are: air pressure 100Torr, gas flow rate 500sccm, CH 4 / H 2 = 1%, PH 3 / CH 4 = 1%, and the substrate temperature was 900°C. After the growth, the surface hydrogen terminals were transformed into oxygen terminals by ultraviolet ozone treatment, and annealed at 1100° C. for 5 minutes to obtain a highly conductive diamond surface 3 . Prepare Ti / Pt / Au metal electrodes 4 on the high-conductivity diamond surface 3 by photolithography, magnetron sputtering, and lift-off processes, and then anneal at 700° C. for 20 minutes in an argon atmosphere to form ohmic contacts.

Embodiment 3

[0035] Such as figure 1 , a (100) orientation n-type single crystal diamond electrode ohmic contact forming method, (100) orientation n-type single crystal diamond 1 is a self-supporting body material, the size is 5 × 5 × 0.5mm 3 , with a surface roughness of 2nm. A 50nm-thick n-type diamond epitaxial thin layer 2 was epitaxially grown on its surface by MPCVD method, and the growth conditions were: air pressure 100 Torr, gas flow rate 500 sccm, CH 4 / H 2 = 1%, PH 3 / CH 4=0.5%, and the substrate temperature was 900°C. After the growth, the sample was placed in a 1:1 mixture of sulfuric acid and nitric acid, heated at 250 °C for 1 h to convert the surface hydrogen terminals into oxygen terminals, and annealed at 1000 °C for 10 min to obtain a highly conductive diamond surface 3. Prepare Ti / Au metal electrodes 4 on the highly conductive diamond surface 3 by photolithography, magnetron sputtering, and lift-off processes, and then anneal at 550°C for 20 minutes in an argon atm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ohmic contact forming method for a (100) oriented n-type monocrystalline diamond electrode. The problems of difficulty in ohmic preparation of (100) oriented n-type monocrystalline diamond and high specific contact resistivity in the prior art are solved. The forming method comprises the following steps: S1, grinding and polishing the surface of (100)-oriented n-type monocrystalline diamond to obtain a smooth surface; S2, growing an n-type monocrystalline diamond epitaxial thin layer on the ground surface of the n-type monocrystalline diamond by utilizing an MPCVD method, and then converting a hydrogen terminal on the surface of the thin layer into an oxygen terminal by means of acid pickling or ultraviolet ozone treatment to obtain a sample A; S3, putting the oxidized sample A into an annealing furnace for annealing so as to separate out phosphorus on the surface of the thin layer and reconstruct carbon atoms to obtain a high-conductivity diamond surface; and S4, plating the high-conductivity diamond surface with a metal electrode, and putting the high-conductivity diamond surface in an annealing furnace for annealing to form ohmic contact.

Description

technical field [0001] The invention belongs to the technical field of electronic engineering, and in particular relates to a (100) orientation n-type single crystal diamond electrode ohmic contact forming method. Background technique [0002] The n-type doping technology of diamond semiconductors limits its wide application in electronic devices. Japan's Material and Materials Research Institute used microwave plasma chemical vapor deposition (MPCVD) to successfully achieve n-type doping of diamond single crystal thin films on the surface of single crystal diamond (111) using phosphorus atoms. On this basis, they quickly carried out the application of diamond p-n junction and p-i-n junction diodes in the field of light-emitting devices and power electronic devices. However, the (111) plane has the problem of difficult mechanical polishing, and its metal / diamond contact interface properties and the photoelectric properties of the film are worse than that of the (100) plane....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0054
Inventor 王宏兴刘璋成赵丹王娟邵国庆易文扬李奇王玮问峰
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com