Group-III nitride p-type ohmic electrode structure with low contact resistance
A technology of low contact resistance and electrode structure, applied in the direction of circuits, electrical components, laser components, etc., can solve problems such as low solid solubility, limited tunneling effect, and limited concentration, achieve high tunneling probability characteristics, and improve ohm Contact characteristics and the effect of reducing contact resistivity
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[0022] The present invention will be described in further detail below in conjunction with accompanying drawing:
[0023] see figure 1 As shown, as the first embodiment of the present invention, the electrode structure is a regular hexagonal spider web shape, including two concentric regular hexagonal line bodies 110, connecting three pairs of opposite corners of the regular hexagonal line bodies The three positive diagonal lines (120, 130, 140), the welding wire electrode part 150 located at the geometric center of the electrode structure or the intersection of any electrode pattern line body, there are two groups of the three groups of opposite sides of the regular hexagonal line body They are respectively consistent with the first crystal orientation and the second crystal orientation of the III-group nitride, and the remaining group is consistent with the equivalent crystal orientation of the first crystal orientation and the second crystal orientation of the III-group ni...
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