Method for improving ohmic contact of ZnO film

Abstract

The invention discloses a method for improving the ohmic contact of a ZnO film, which comprises the following steps of: utilizing a hydrogen plasma to treat an electrode contact area of the ZnO film before a metal electrode is deposited; and then depositing a double-layer metal electrode in the electrode contact area of the ZnO film treated by the hydrogen plasma to form the ohmic contact. The treatment of the hydrogen plasma causes hydrogen to be diffused into the ZnO film, which improves the carrier concentration of the ZnO film in the contact area, and reduces the resistivity of the ZnO film in the contact area so as to remarkably reduce the contact resistance of the ZnO film and metal and improve the ohmic contact characteristics thereof. In addition, in MS technology, sputtered particles have higher energy, so ZnO / Ti interfacial atoms can be fully mixed, and the adhesion of the Ti / Au contact on the ZnO film can be improved. The ohmic contact with good adhesion and low contact resistance can be obtained by the method, and a foundation is laid for realizing ZnO film electronic devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the ohmic contact of a ZnO thin film. Background technique [0002] ZnO is an important II-VI wide bandgap and direct bandgap semiconductor material. At room temperature, its bandgap width is 3.37eV, and the exciton binding energy is 60meV. It is considered to be another new type after ZnSe and GaN. Optoelectronic materials are the best candidate materials for short-wavelength light-emitting diodes (LEDs) and semiconductor lasers. They have a wide range of uses in high-tech fields such as information storage and display, optical communications, semiconductor white light lighting, medicine, and biology. They are the current semiconductor material science and device research hotspots. [0003] At present, people have been able to use methods such as molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) and magnetron sputtering ...

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Problems solved by technology

[0005] At present, the commonly used methods to improve the ohmic contact of ZnO include rapid thermal annealing, Al doping, etc., but these methods can reduce the contact resistance to a certain extent, but thermal annealing will cause the instability of the performance of ZnO devices, and only the contact area The process of Al doping is relatively complicated

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