Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving ohm of p-type gallium nitride

A technology of gallium nitride and gallium nitride layer, which is applied in the field of semiconductor material growth and device preparation, can solve the problems of difficult to achieve high-quality p-type gallium nitride ohmic contact and low hole concentration, achieve low ohmic contact, simplify Process, the effect of realizing ohmic contact

Inactive Publication Date: 2020-07-24
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the ionization energy of the magnesium acceptor impurity in p-type GaN is as high as 200meV, and the impurities or defects in GaN will compensate the magnesium acceptor, the hole concentration is low, and in addition, the work function of p-type GaN is lacking. High metal, making it difficult to achieve high-quality p-type GaN ohmic contacts

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving ohm of p-type gallium nitride
  • Method for improving ohm of p-type gallium nitride
  • Method for improving ohm of p-type gallium nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0048] Step S1: Infuse ammonia gas, and turn on the gallium source. A 50nm low-temperature gallium nitride buffer layer 2 is grown on a sapphire substrate 1 by metalorganic chemical vapor deposition method, and the growth temperature is 550°C.

[0049] Step S2: growing a high-temperature unintentionally doped gallium nitride layer 3 of 1000 nm on the low-temperature gallium nitride buffer layer 2 by using metalorganic chemical vapor deposition, and the growth temperature is 1100° C.

[0050] Step S3: growing a moderately magnesium-doped p-type gallium nitride layer 4 on the unintentionally doped gallium nitride layer, the thickness of which is 500 nm, wherein the concentration of magnesium acceptor impurities is about 1×10 19 em -3 .

[0051] Step S4: grow a heavily magnesium-doped p-type gallium nitride layer 5 with a thickness of about 20 nm on the moderately magnesium-doped p-type gallium nitride layer 4, and control the carbon impurity concentration of the layer by adjus...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for improving ohm of p-type gallium nitride. The method comprises the steps of 1 growing a low-temperature gallium nitride buffer layer on a substrate; 2 growing a high-temperature unintentionally-doped gallium nitride layer on the low-temperature gallium nitride buffer layer; 3 growing moderate magnesium-doped p-type gallium nitride on the high-temperature unintentionally-doped gallium nitride layer; and step growing heavily-doped magnesium p-type gallium nitride on the moderate magnesium-doped p-type gallium nitride. By adjusting the epitaxial growth conditions of the heavily-doped magnesium p-type gallium nitride and controlling the concentration of carbon impurities in the layer, the specific contact resistivity can be effectively reduced, and the ohmiccontact of the p-type gallium nitride is improved.

Description

technical field [0001] The disclosure relates to the field of semiconductor material growth and device preparation, and in particular to a method for improving p-type gallium nitride ohms. Background technique [0002] Gallium nitride material systems have shown excellent performance in the fields of optoelectronic and microelectronic devices such as solid-state light-emitting diodes, blue / green lasers, high electron mobility transistors and solar cells. Among them, gallium nitride-based lasers have the advantages of adjustable wavelength, high efficiency, small size, and controllable time and space, and have important application value in the fields of submarine communication, laser mine detection, laser display, laser micro-projection, and laser lighting. [0003] How to obtain a good p-type GaN ohmic contact is an important basis for the wide application of GaN-based devices. For example, the working voltage of GaN-based lasers is directly related to the p-type ohmic cont...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/042
CPCH01S5/0421H01S5/0425H01S5/3013H01S5/3086H01S2304/04
Inventor 梁锋赵德刚刘宗顺朱建军陈平杨静
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com