Quickly-opened floating island device and manufacturing method thereof

Abstract

The invention relates to a quickly-opened floating island device and a manufacturing method thereof in the technical field of semiconductors, the quickly-opened floating island device comprises a surface layer, a bottom layer and a drift region, the drift region comprises a plurality of groups of substrate layers and a plurality of groups of floating island layers, one group of floating island layers is arranged between every two groups of substrate layers, or one group of substrate layers is arranged between every two groups of floating island layers, and the surface layer is arranged between the surface layer and the bottom layer. A heavily-doped inversion region is arranged in the floating island layer, so that the floating island device has the advantage of eliminating the obstruction of space charges to current, and the problem that the conduction capability of the floating island device with an opposite type of doping region in a drift region cannot be recovered under relatively low bias voltage is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fast-turn-on floating island device and a manufacturing method thereof. Background technique [0002] In recent years, more and more attention has been paid to energy saving and emission reduction in the world, which puts forward higher requirements for loss control and efficiency improvement of large power electronic equipment. As an important part of power electronic equipment, semiconductor power devices have received extensive attention from the industry. . [0003] Breakdown voltage is an important indicator of semiconductor power devices, which indicates the maximum voltage that the device can withstand. Floating island device (or floating junction device) refers to a special power device, in which there is Directly connected, and the doping type is opposite to that of the drift region, at the moment when the floating island device doped as N-type in the drift reg...

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Problems solved by technology

[0003] Breakdown voltage is an important indicator of semiconductor power devices, which indicates the maximum voltage that the device can withstand. Floating island device (or floating junction device) refers to a special power device, in which there is Directly connected, and the doping type is opposite to that of the drift region, at the moment when the floating island device doped as N-type in the drift region changes from the blocking state to the conducting state, due to the P-type doping region inside the drift region and the electrode Without a direct connection, hole carriers cannot enter the P-type doped region, resulting in negative charges remaining in the P-type doped region, while a large number of positive charges are attracted to the N-type drift region, occupying the space charge. The full drift region causes the energy band to bend, thereby hindering the flow of electron carriers, that is, the floating island device with a floating doped region in the drift region cannot complete the conduction recovery at low voltage

In this case, only when the bias voltage is large enough, the charge can conduct through the drift region, but when the bias voltage is low, there is a problem that the conduction ability cannot be restored

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