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P-type monocrystalline silicon battery front film coating structure and preparation method thereof

A single crystal silicon cell, crystalline silicon technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as unfavorable electrical performance, affecting cell conversion efficiency, and large carrier recombination, achieving good tunneling effect, improving Voc and Isc, the effect of improving transformation efficiency

Pending Publication Date: 2019-05-21
SUZHOU TALESUN SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at the silver-silicon contact, the carrier recombination is relatively large, which is not conducive to the improvement of electrical performance and affects the conversion efficiency of the battery.

Method used

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  • P-type monocrystalline silicon battery front film coating structure and preparation method thereof
  • P-type monocrystalline silicon battery front film coating structure and preparation method thereof
  • P-type monocrystalline silicon battery front film coating structure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0041] A method for preparing a front coating structure of a P-type monocrystalline silicon cell, comprising the following steps:

[0042] (1) After texturing, diffusion, and etching, SiO is deposited on the front surface of the battery by thermal oxidation 2 layer with a thickness of 2 nm;

[0043] (2) back coating;

[0044](3) The mask method is selective. Deposit a P-doped polysilicon layer n-Si layer on the front of the battery, with a thickness of 20nm. The deposition method is PECVD. The pattern of the mask used must be consistent with the front silver electrode grid line of the subsequent screen printing The pattern of the pattern is complementary and consistent, ensuring that the pattern of the deposited polysilicon layer is consistent with the pattern of the front silver electrode grid line, so that the subsequent printing of the front silver electrode grid line can be overprinted in the pattern of the deposited polysilicon layer;

[0045] (4) Remove the battery fro...

Embodiment 2

[0050] A method for preparing a front coating structure of a P-type monocrystalline silicon cell, comprising the following steps:

[0051] (1) After texturing, diffusion, and etching, wet chemical method deposits SiO on the front surface of the battery 2 layer with a thickness of 1 nm;

[0052] (2) back coating;

[0053] (3) The mask method is selective. Deposit a P-doped polysilicon layer n-Si layer on the front of the battery with a thickness of 30nm. The deposition method is PECVD. The pattern of the mask used must be consistent with the front silver electrode grid line of the subsequent screen printing. The pattern of the pattern is complementary and consistent, ensuring that the pattern of the deposited polysilicon layer is consistent with the pattern of the silver electrode grid line, so that the subsequent printing of the front silver electrode line is overprinted in the pattern of the deposited polysilicon layer;

[0054] (4) Remove the battery front mask;

[0055] ...

Embodiment 3

[0059] A method for preparing a front coating structure of a P-type monocrystalline silicon cell, comprising the following steps:

[0060] (1) After texturing, diffusion, and etching, SiO is deposited on the front surface of the battery by thermal oxidation 2 layer with a thickness of 4 nm;

[0061] (2) back coating;

[0062] (3) Mask method Optionally, deposit a P-doped polysilicon layer n-Si layer on the front of the battery with a thickness of 10 nm, and the deposition method is LPCVD.

[0063] (4) Remove the battery front mask;

[0064] (5) Deposit a SiNx layer, 100nm, on the entire surface of the front, and the deposition method is PECVD;

[0065] (6) Screen print the front silver electrode grid to complete the battery production.

[0066] Among them, the side length of the battery is 157.75mm*157.75mm, and the diagonal diameter of the battery sheet is 210mm. There are 110 screen-printed front fine grids, each with a width and length of 0.032mm and 156.15mm, and a tot...

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Abstract

The invention belongs to the field of solar cells in the photovoltaic industry and particularly relates to a P-type monocrystalline silicon battery front film coating structure and a preparation method thereof. The method comprises the steps of texturing, diffusion, etching, front SiO<2> layer deposition, back film coating, front masking, front doped P polycrystalline silicon (n-Si) deposition, front mask removal, front SiN<x> layer deposition, silk-screen printing and metallization. According to the prepared P-type monocrystalline silicon battery front film coating structure, a layer of dopedP polycrystalline silicon is added to a front electrode pattern, the doped polycrystalline silicon layer can achieve a good tunneling effect on a battery front in combination with a thin oxidized layer, and holes in a battery are prevented from migrating to the front surface; and a front metal electrode makes contact with the doped polycrystalline silicon layer, the problem that surface recombination is high due to direct contact between the metal electrode and a silicon substrate is avoided, Voc and Isc of the battery are improved, and therefore the conversion efficiency of the battery is effectively improved.

Description

technical field [0001] The invention belongs to the solar battery industry in the photovoltaic industry, and specifically relates to a front coating structure of a P-type single crystal silicon battery and a preparation method thereof. Background technique [0002] The energy problem has always been an important factor that plagues my country's economic development. The depletion of fossil energy makes the research of new energy become particularly critical, especially the research of solar energy. Photovoltaic materials are the key content of solar energy research. Monocrystalline silicon has many advantages, such as relatively perfect crystal structure, less impurities, high purity, high minority carrier lifetime, and easy control of resistivity. It has become a leader in photovoltaic materials. Until now, monocrystalline silicon still occupies an important position in the photovoltaic industry with mature smelting technology, simple production methods and relatively high ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0236H01L31/0224H01L31/18
CPCY02E10/50Y02P70/50
Inventor 霍亭亭魏青竹倪志春连维飞胡党平
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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