36results about How to "Change charge distribution" patented technology

The invention discloses a semiconductor device and its terminal. The semiconductor device includes an active area and a terminal area. The semiconductor device includes a first column area, a second column area and a first dielectric column area located in the active area. and a first termination within the termination region, the first termination comprising a third stud region, a fourth stud region and a second dielectric stud region, wherein both the first stud region and the third stud region have a first doping type, Both the second column region and the fourth column region have the second doping type, the width of the third column region is smaller than the width of the first column region, the width of the fourth column region is greater than or equal to the width of the second column region, and the width of the second dielectric column region is greater than Or equal to the width of the first dielectric stud region. The structure of the present invention modulates the spatial distribution of negative charges in the terminal region on the basis of realizing negative charges in the terminal region during blocking, realizes a more uniform electric field distribution in the terminal region, and finally improves the withstand voltage of the device terminal.

The invention discloses a laterally diffused MOSFET (LDMOS). Compared with the conventional MDMOS, the laterally diffused MOSFET is characterized in that: a p-type ion implantation zone (20) is added at the bottom and / or side wall of one side, close to the drain (182) in the n-well (12), of the isolation structure (13) between the source (181) and the drain (182). By adoption of the added p-type ion implantation zone (20), the appearances of the electric charge distribution and the depletion region are changed, the breakdown voltage (BV) of LDMOS device is improved, the Rdson of LDMOS device is basically free from influence and a better balance between BV and Rdson is realized.

The invention relates to a coumarin-based relay responsive fluorescent molecular probe and a preparation method and an application thereof and belongs to the technical field of fluorescent chemical sensing materials. The preparation method comprises the following steps of: by taking 4-methylum-belliferyl as a fluorescent group, substituting hydroxyl hydrogen on a site C-7 on 4-methylum-belliferyl by chloroacetyl chloride to form an intermediate compound R; and then performing a substituting reaction on the compound R and 2-methyl pyridinamine as well to combine to prepare the fluorescent molecular probe material. The fluorescent molecular probe prepared by the method has strong blue fluorescent emission. Charge distribution of the probe molecular structure is changed in the presence of Fe<3+>. The blue fluorescence is quenched. After further adding phosphate anions, the fluorescence of the probe is recovered by means of the supplementary effect of metal ions and negative charges, so that the relay identifying detection on Fe3<+> and phosphate anions in a same system is realized, detection and recognition under 100% water soluble condition are realized, and change of the fluorescent signal is macroscopic.

The invention provides an n-type organic semiconductor material containing oblique aromatic naphthalene diimide units, which can be used for organic thin film field effect transistors. This material changes the characteristics of the previous linear naphthalene diimine molecule, which connects the six-membered carboxylate imide ring to the 1, 8 and 4, 5 positions of the naphthalene ring, and changes it to the 1, 2 and 4 positions connected to the naphthalene ring. The 5 and 6 positions form a five-membered ring and a slash type, which can change the charge distribution and electronic energy level of the material molecule. This structure is conducive to the introduction of polymerizable groups at the 3 and 7 positions of the naphthalene ring to synthesize polymers containing oblique aromatic naphthalene diimide units.

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a substrate; an ion-doped region formed in the substrate; an electrically deep trench isolation ring formed in the substrate and Surrounding the outside of the ion-doped region and insulated from the ion-doped region in the substrate; and a top electrode and a bottom electrode, the top electrode being formed on the top surface of the substrate and electrically connected to the top surface of the electrical deep trench isolation ring, the bottom electrode is formed on the bottom surface of the substrate and connected to the bottom surface of the electrical deep trench isolation ring, and the top electrode and The non-zero potential difference between the bottom electrodes can charge the electric deep trench isolation ring to change the charge distribution in the ion-doped region. The technical scheme of the invention can realize precise control of the ion doping concentration and depth in the ion doping region, thereby meeting the high requirements of advanced semiconductor devices.

The invention relates to a method for efficiently removing heavy metal pollutants based on zero-valent iron fluoride. The zero-valent iron fluoride is characterized in that part of the hydroxyl groups on the surface of the zero-valent iron are replaced by fluorine or fluorine-containing groups, and by sulfonic acid surfactant groups. Usage method: add the above-mentioned zero-valent iron fluoride into the water body polluted by heavy metals to remove heavy metals. The zero-valent iron fluoride provided by the invention has good transmission capacity, high electron selectivity and high utilization rate, and has the advantages of high pollutant removal efficiency, simple operation and high cost efficiency when used for the removal of heavy metal pollutants.

The invention relates to a preparation method of an X-type molecular sieve / LDHs composite adsorbent for separating methane and nitrogen through pressure swing adsorption. The preparation method comprises the following steps: performing reaction and modification on an X-type molecular sieve and an anionic surfactant or anionic polyelectrolyte under a hydrothermal condition to make the surface of the X-type molecular sieve have negative charges, and compounding the X-type molecular sieve with LDHs to form a composite material according to the principle that anions between layers of LDHs can be plugged in a replacing manner. The preparation method has the beneficial effects that the X-type molecular sieve which is modified by the anions and is provided with the negative charges is plugged between the layers of LDHs, so that the adsorption function of the X-type molecular sieve is realized; furthermore, under the electrostatic effect between the X-type molecular sieve and LDHs laminate, the charge distribution of the X-type molecular sieve is changed, so that the adsorption effect of the X-type molecular sieve for N2 in a PSA process is greatly enhanced.