63results about How to "Balance injection" patented technology

The invention discloses a NiO composite film and a quantum dot light-emitting device and the preparation and application thereof, which utilizes an M: NiO / NiO composite film structure, an M: NiO film layer of NiO doped by M metal and an M: NiO / NiO structure formed composite material film with NiO composition gradient composed by the NiO film layer, wherein M metal can be any metal of Li, Mg and Cu or an alloy. The M mole ratio in the M metal doped NiO film layer ranges between 1-5 mol %. The invention can not only solve the problem of hole injection, but also improves the balance of carrier injection in the device with the result being the improvement in the performance and stability of the device and the solution to the problem of short life of the existing quantum dot light-emitting device. In addition to the cathode using vacuum evaporation, all the function layers, including the inorganic hole composite layer, use the solution spin coating method for the film preparation. The materials can be obtained easily, the method is simple and the cost is low.

The invention relates to an OLED display panel. The OLED display panel comprises a first electrode and a second electrode which are oppositely arranged and a laminate arranged between the first electrode and the second electrode, wherein the laminate at least comprises a first auxiliary light emitting layer and a light emitting layer which are sequentially arranged from the first electrode; the first auxiliary light emitting layer selects a host-guest doped form, a radialene compound is doped in a host material, hole injection rate is improved by utilizing stronger hole injection capacity of the radialene compound, voltage of a device is reduced, further light emitting efficiency is improved, and a horizontal leakage current phenomenon is reduced.

The invention relates to a fluorescent blue light guest material and its preparation method and use and especially relates to a triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material and its preparation method and use. The triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material solves the problem that because of large difference of an electron donor and an acceptor, when the electron donor is increased, guest emission wavelength produces red shift so that stable and efficient blue guest luminescence cannot be realized. The blue light guest material has a structural formula shown in the description. The preparation method comprises 1, preparing PXZPhBr, PXZPhBr, PTZPhBr and DMACPhBr, 2, mixing the products obtained through the step 1 and tetrahydrofuran, adding n-butyllithium and diphenylphosphinous chloride into the mixture, adding hydrogen peroxide into the mixture, carrying out stirring and carrying out chromatography and recrystallization. The triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material is used for preparation of a thermal excitation delayed fluorescent electroluminescent device. The material utilizes short-axis modification strategy, effectively keeps a matrix triplet state energy level, has a donor-acceptor (D-A)-type molecular structure and balances carrier injection and transmission. The preparation method belongs to the field of fluorescent material preparation.

The invention relates to an nc-Si based luminescent device based on a controllable asymmetric quantum well structure doping with voltage barrier and a preparation method thereof, which belongs to the technical field of nano-electronics and nano-photoelectronic device material. The luminescent device is deposited with an amorphous carborundum thin film doping with boron as a cavity barrier layer on a semiconductor substrate; the cavity barrier layer is deposited with an nc-Si film which is generated by the anneal of an amorphous silicon film and is used as a luminescent active layer; the luminescent active layer is deposited with an amorphous silicon dioxide thin film doping with phosphor which is used as an electronic barrier layer; the electronic barrier layer is deposited with a conductive film which is left with an optical window and used as the cathode of the luminescent device, while the back side of the semiconductor substrate is deposited with a conductive film which is used as the anode of the luminescent device. The technical process of the invention relates to that a multi-layer film with the quantum well structure is prepared; then annealing and crystallization are processed and the electrodes of the device are prepared. The luminescent device has the advantages of high efficient and balanced current carrier injection structure and the Si / SiO2 luminescent system, which provides the possibility of the realization of a high efficient Si-based luminescent device.

The invention provides an anthracene-containing compound, a synthesis method thereof, and an organic electroluminescent device, and relates to the technical field of organic photoelectric materials. In the invention, different ligands are connected to a main structure formed by connecting anthracene and acridine, thus regulating molecular weight, [pi]-conjugation degree and electrophilicity of thematerial, enhancing charge transmission capability, balancing carrier injection and increasing glass transition temperature. The compound is not liable to crystallize and has good film forming performance. The synthesis method is simple and easy to carry out. The compound can be used for producing the organic electroluminescent device, especially as a luminescent layer main body and an electron transfer layer material in the organic electroluminescent device. The organic electroluminescent device has high luminous efficiency and long service life.

The invention discloses a triphenylamine substituted-vinyl modified phenanthroimidazole compound, a preparation method thereof and an application of the compound as an electroluminescent device. The structural general formula of the compound is shown in a formula (I), wherein R is hydrogen or phenyl. According to the invention, excellent characteristics of phenanthroimidazole materials and triphenylamine substituted-vinyl are adopted, meanwhile, a donor and a receptor are connected through the vinyl, and the pi electron ionization region can be effectively improved, so that carrier injection and transmission are more balanced, then fluorescence quantum efficiency is improved, and high-fluorescence quantum efficiency of a solid-state thin film under an aggregation state is achieved; and meanwhile, blue-green light can be efficiently emitted in an organic solvent, and organic luminescent small molecules with good carrier transmission capability and high fluorescence quantum yield under aaggregation state are synthesized. The compound provided by the invention can be used as a luminescent material to be widely applied to organic luminescent devices, in particular to the stable and efficient organic electroluminescent devices.

The invention discloses a device for improving the luminous efficiency of a silicon nitride-based thin-film light-emitting diode and a preparation method of the device, and belongs to the technical field of semiconductor luminescent devices. The preparation method mainly comprises the following steps: a p-Si layer is used as a hole-injection layer, and an ultrathin noncrystalline silicon thin film is deposited on the hole-injection layer; a silicon nitride-based thin film is deposited on the ultrathin noncrystalline silicon thin film to serve as a light-emitting active layer; the ultrathin noncrystalline silicon thin film is placed in an annealing furnace to be subjected to dehydrogenation annealing and steady state high temperature annealing in sequence, so that the ultrathin noncrystalline silicon thin film is converted into a nanometer silicon thin film; then, an AZO transparent conducting thin film provided with an optical window is deposited on the silicon nitride-based light-emitting active layer. The device for improving the luminous efficiency of the silicon nitride-based thin-film light-emitting diode and the preparation method of the device mainly have the advantages that ultrathin nanometer silicon is used as a hole blocking layer in the device to effectively restrain hole carriers from being injected excessively, therefore, balanced injection of electrons and holes is promoted, and the luminous efficiency of the device is improved. The preparation process is simple, good in controllability, and compatible with a current microelectronic process.

The embodiments of the present invention provide an organic electroluminescent device, a manufacturing method thereof and an electronic equipment. The organic electroluminescent device comprises: an anode layer, a hole transport layer, a first light emitting layer, a second light emitting layer, an electron transport layer, and a cathode layer stacked in sequence; wherein the first light emitting layer and the second light emitting layer comprise a same substrate material; the first light emitting layer and / or the second light emitting layer are doped such that a hole mobility of the first light emitting layer is equal to an electron mobility of the second light emitting layer. In the embodiments of the present invention, two light emitting layers with the same substrate material are applied, which can realize a balanced injection for electrons and holes, thereby improving the efficiency and lifetime of the organic electroluminescent device.

The invention discloses a bipolar small molecular light-emitting material based on an aromatic heterocyclo-2-S,S-dioxydibenzothiophene unit, and a preparation method and application thereof. The preparation method comprises the following step: performing Suzuki coupling reaction on an aromatic heterocyclo-2-S,S-dioxydibenzothiophene monomer and a borate monomer containing an Ar structure to obtain the bipolar small molecular light-emitting material based on an aromatic heterocyclo-2-S,S-dioxydibenzothiophene unit. The bipolar small molecular light-emitting material disclosed by the invention has solubility, film forming property and film morphology stability, also has favorable electron and hole transmission performance, and can balance carrier injection and transmission to realize effective compounding of more excitons; a light-emitting layer based on the material can avoid the phenomenon of mixing with a hole / electron transmission layer interface, thereby improving the light-emitting efficiency of a device; and the light-emitting layer based on the material dose not need to be subjected to annealing treatment during preparation of the electroluminescent device, thereby ensuring that the preparation process is simple.

The invention discloses a fluorinated triphenylamine electro-material and an application thereof; according to the material, through the change of the positions and the numbers of hole transporting moieties of strong electron-withdrawing groups of fluorine or trifluoromethyl at periphery of triphenylamine, the energy of the highest occupied molecular orbital, the energy of the lowest unoccupied molecular orbital, the charge transport capacity, photophysical properties and thermal properties of the material are adjusted; thus balance between the injection and transport of holes and electrons is reached; most holes and electrons of the injected device are combined in a luminescent layer; therefore, the device structure is greatly simplified, and the device performance is improved. Meanwhile, through the modification of fluorine or trifluoromethyl, the luminescence property for blue and violet light of the material quite approaches the blue light chromaticity coordinate (CIE=(0.14, 0.08)) of the International Commission of Illumination (NTSC) the material also has a narrow spectrum full width at half maximum (FWHM); devices prepared by the material can not only effectively reduce device energy consumption, but also adjust the illuminant color of the device through radiation or energy transfer between a subject and an object.

The invention provides a non-PEDOT: PSS inverted series quantum dot light emitting device and a preparation method thereof. A second interface modification layer is arranged between a first hole injection layer and a second electron transport layer to form a connecting layer composite structure connected with two electroluminescent units in series. The interface modification layer is additionallyarranged between the hole injection layer of one electroluminescent unit and the electron transport layer of the other electroluminescent unit, and the hole injection layer / the interface modificationlayer / the electron transport layer form the composite connection structure serving as a connecting layer to be connected with the two electroluminescent units in series, so that the quantum dot light-emitting device is suitable for four colors of red, yellow, green and blue, and can effectively improve the light emitting efficiency, brightness and prolong the service life.

The invention discloses a white light organic electroluminescent device with a double-layer double-parent structure without a spacer layer, belonging to the technical field of organic electroluminescent devices. The device consists of a substrate, an anode, a hole transport layer, a luminescent layer, an electronic transport layer and a cathode. Between the hole transport layer and the electron transport layer, there are two dual-parent organic light-emitting layers, and the organic light-emitting dyes are doped in the dual-parent materials in the form of dopants. The dual-parent structure iscomposed of hole transport layer material and electron transport layer material. The doping ratio of hole transport layer material in the luminescent layer near the anode is larger than that in the luminescent layer near the cathode. As that luminescent lay adopts a double-layer double-parent structure without space layer, the interface potential barrier is reduced, the balance transmission of carrier and the uniform distribution of excitons in the luminescent lay are facilitated, and the high-efficiency white light emission with stable spectrum is easily realized.

The invention discloses a compound, a preparation method thereof and an organic light-emitting device. The compound is shown as a formula I in the specification, wherein the R group is a substituent group containing an atom N, O or S. The preparation method of the compound comprises a coupling step of performing a coupling reaction on a compound shown as a formula II and a compound shown as a formula III to obtain a compound shown as a formula I-1. The compound is taken as a main body material of an organic light-emitting layer of the organic light-emitting device. The material is stable in performance, and the external quantum efficiency of the organic light-emitting device can be increased, so that the light-emitting efficiency of the organic light-emitting device can be increased.

The invention discloses a core-shell quantum dot, a quantum dot light emitting diode, a quantum dot composition and a display device. The core-shell quantum dot comprises a quantum dot core, a first shell layer, a second shell layer and a third shell layer, wherein the first shell layer, the second shell layer and the third shell layer sequentially coat the quantum dot core from inside to outside,the quantum dot core is made of CdZnSe, the first shell layer is made of CdZnSeS, the second shell layer is made of ZnSeS, and the third shell layer is made of CdZnS. According to the core-shell quantum dot provided by the invention, separation of a hole wave function and an electron wave function is realized, the hole wave function is limited in the quantum dot core, the electron wave function is delocalized into the third shell layer, and the hole injection capability and the electron injection capability of the core-shell quantum dot can be respectively adjusted while the emission peak isin the blue light range, so that the injection of carriers is balanced.

The invention discloses a nano material, a preparation method thereof and a quantum dot light emitting diode. The nano material has a core-shell structure, and the core of the nano material comprises ZnO nano particles and metal elements doped in the ZnO nano particles; and the shell of the nanometer material comprises a metal oxide. By doping other metal elements in the zinc oxide nanoparticles and wrapping a layer of metal oxide shell, the energy level structure and the electron transmission efficiency of the whole nano material can be adjusted, so that the energy levels of the quantum dots and the nano material in the device are more matched, and the quantum dots and the nano material are more uniform. Transfer of electrons in the quantum dot light-emitting layer to the electron transport layer is reduced, and the electron-hole recombination efficiency of the quantum dot light-emitting layer is improved; electron hole injection of the device is more balanced, charge accumulation of the quantum dot light-emitting layer is reduced, Auger recombination is inhibited, and the radiative recombination efficiency of electron holes is improved; therefore, the zinc oxide nanoparticles are more stable, and the overall stability of the device is improved.

The invention relates to a photoelectric material and a preparation method thereof, particularly to a fluorenyl aromatic phosphine oxide photoelectric material and a preparation method thereof, and aims at solving the problem that carrier injection transmission is unbalanced caused by the fact that aromatic hydrocarbon or arylamine functional groups with large conjugated structures are introduced into a fluorine system. The method includes preparing 2-bromine-(9,9-bis-(diphenylphosphine oxide) ) fluorine; and mixing the 2-bromine-(9,9-bis-(diphenylphosphine oxide) ) fluorine, tetrakis (triphenylphosphine) palladium, tetrabutylammonium bromide and borate and dissolving in tetrahydrofuran, adding in NaOH solution, and obtaining the photoelectric material after reaction, extraction, drying and column chromatography; or mixing the 2-bromine-(9,9-bis-(diphenylphosphine oxide) ) fluorine, carbazole, potassium carbonate, copper iodide and 18-crown-6-ether, adding in a high-temperature solvent, and obtaining the photoelectric material after reaction, extraction, drying and column chromatography. The power efficiency of the photoelectric material prepared through the method can reach 2.19lm / W when the material is used for preparing blue-ray fluorescent devices.

The invention discloses a bis(N-phenyl)-3-carbazole substituted phenanthroimidazole compound, a preparation method thereof and application of the compound serving as an electroluminescent device. Thecompound has a molecular structure shown as a formula (I) shown in the specification. The preparation method comprises the following steps: carrying out a one-pot reaction on 4-bromobenzaldehyde, p-bromoaniline and 9,10-phenanthrenequinone to prepare 4,4-bisbromo-phenanthroimidazole; adding N-phenyl-3-carbazole boric acid, and carrying out a Suzuki reaction under the action of a catalyst tetrakis(triphenylphosphine) palladium, so as to obtain the bis(N-phenyl)-3-carbazole substituted phenanthroimidazole compound. The preparation method is simple and convenient, and large-scale batch preparation can be realized; the compound shown in the formula (I) has good carrier transport capacity, high fluorescence quantum yield in an aggregation state and high blue light color purity, and can be widely applied to organic light-emitting devices, especially stable and efficient dark blue organic light-emitting devices as a light-emitting material.

The invention belongs to the technical field of display, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode; a material layer composed of organic molecules is arranged between the anode and the quantum dot light-emitting layer, and the organic molecules contain electron withdrawing groups. The material layer composed of the electron withdrawing group-containing organic molecules can reduce the hole injection barrier from the anode to the quantum dot material, thereby improving the hole injection efficiency of the device, enabling the injection of holes and electrons to be more balanced, and finally improving the performance of the device.

The invention provides a transparent OLED alloy cathode, a manufacturing method thereof and a transparent OLED device. The alloy cathode is Ag and Al alloy, the mass ratio of Ag to Al is 75-80% to 25-20%, the best thickness of the Ag and Al alloy is 75 nm, and Ag and Al adopt a vacuum melting method to be melted in a quartz glass tube in a vacuum condition and are naturally cooled to form the alloy. The Ag and Al alloy cathode of the invention can improve the electron injection capability of the cathode, the performance is better than a single metal cathode OLED device, and the cathode can be applied to the transparent OLED; and the Ag and Al alloy can be evaporated through only one tungsten boat, while the operation difficulty is reduced, the film thickness is easier to be controlled, and the device structure is optimized.

The invention discloses a trianiline thiofluorene unit-based blue light conjugated polymer, and a preparation method and application thereof. Thiofluorene has a large band gap, so that great reductionof the highest occupied molecular orbital energy level of a polymer is easily caused by introducing the thiofluorene into the polymer; therefore, the injection and transmission balance of holes in anelectroluminescent device are affected. In order to find a balance point in the two aspects of injection and transmission of electrons / holes, the trianiline thiofluorene unit is designed and prepared; the trianiline thiofluorene unit has good hole transmission performance, so that the problem caused by introducing a thiofluorene unit into the main chain of the polymer can be effectively solved. Moreover, a long alkyl chain exists on the trianiline thiofluorene unit, so that the trianiline thiofluorene unit has good solubility; the conjugated polymer which is prepared through a Suzuki polymerization reaction is suitable for performing solution processing and printing displaying. The trianiline thiofluorene unit-based blue light conjugated polymer disclosed by the invention can be used fora light-emitting layer of an organic light emitting diode.

The invention belongs to the field of photoelectric devices, and discloses a rare earth electrogenerated dark blue light device. The device sequentially comprises a top electrode, an electron transport layer, a light emitting layer, a hole transport layer and a bottom electrode from top to bottom, wherein the light emitting layer is made of an Eu-based perovskite type material, and in the Eu-basedperovskite type material, an Eu element occupies a B site in a perovskite ABX3 structure and does not contain Pb; the electron transport layer and the hole transport layer are used for localizing electrons or holes in the light-emitting layer and adjusting injection balance of the electrons and the holes. According to the invention, the Eu-based perovskite type material (such as CsEuBr3) is usedas a luminescent layer material to construct the rare earth electrogenerated dark blue light device, and the material is an inorganic material, so that the material is good in stability, not easy to age and long in service life, the existing display color gamut can be widened, and the technical problems of poor OLED stability, easy aging and easy blue light color distortion are solved.

The invention provides a preparation method of an MXn film. The method includes the following steps that: MXm powder is provided, the MXm powder is dispersed in a solvent, so that a MXm dispersion canbe obtained; (NH4)2X is added to the MXm dispersion, and an obtained mixture is stirred or subjected to ultrasonic treatment until a clear mixed solution is obtained; the mixed solution is heated andstirred, so that a polysulfide precursor solution can be obtained, and a film layer is deposited by means of a solution treatment method; and after the film layer is annealed at 80 to 120 DEG C, thefilm layer is subjected to heating treatment in a reducing or inert atmosphere at 250 to 300 DEG C, so that the MXn film can be obtained. According to the method of the invention, X in the MXm, (NH4)2X, and MX n is at least one material selected from S and Se; and M in the MXm and MXn is a material selected from Mo, W, V, Nb and Ta; the value of m in the MXm is larger than or equal to 2 and is smaller than or equal to 3; and the value of n in the MXn is larger than or equal to 2 and is smaller than 3; and n is smaller than or equal to m.

The invention provides a purine derivative and an organic electroluminescence device thereof, and relates to the technical field of organic photo-electricity materials. Different ligands are connectedon a purine main body structure, molecular weight, pi conjugated degree, energy gap width and eletrophilicity of materials are adjusted, the purine derivative is high in luminescence efficiency, electronic transmission capacity is enhanced, carrier injection can be effectively balanced, the purine derivative is good in film forming property and not easily crystallized, and a synthetic method is simple and easy to operated. The materials can be used for preparation of the organic electroluminescence device and particularly serve as a luminescent layer and an electron transfer layer of the organic electroluminescence device, and the organic electroluminescence device of the purine derivative has the advantages of high luminescence efficiency and long service life.

The invention belongs to the technical field of photoelectric display devices, and particularly relates to a thiazole-based organic electroluminescent material and a preparation method thereof. The thiazole-based organic electroluminescent material provided by the invention has a structure as shown in a formula (I). The invention also provides a preparation method of the thiazole-based organic electroluminescent material. The method comprises the step of subjecting a compound as shown in the formula (II), 3,10-dibromo-14-(3-(5-phenyl-1,3,10-oxadiazol-2-yl)phenyl)-14H-bis(S,S-dioxo-dibenzothiophene)pyrrole and 2-(3-(3,10-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-14H-bis(S,S-dioxo-dibenzothiophene)pyrrole-1, 5-phenyl-1,3,4-oxadiazole to a Suzuki coupling reaction so as to obtain a polymer as shown in a formula (I). The thiazole-based organic electroluminescent material and the preparation method thereof solve the technical problem that existing organic electroluminescent materialsare difficult to guarantee both hole and electron transport efficiency and are thus poor in electroluminescent efficiency.

The invention belongs to the technical field of electroluminescence materials, and discloses a heterocyclic nitrogen containing organic light-emitting material and application thereof. The heterocyclic nitrogen containing organic light-emitting material is characterized in that pyridine indole carboline is used as a main unit and is combined with other aromatic heterocycte with power supplying orbearing capacity, so that electric charge injection can be more balanced; the material is high in stability; in addition, the component is outstanding in solubleness, and easy to sublimate and process.

The invention discloses a bipolar small-molecular luminescent material based on a heteroaromatic ring-fused-3-S,S-dioxodibenzothiophene unit, and a preparation method and an application thereof. Through a Suzuki coupling reaction, electron donor units are connected to two sides of the heteroaromatic ring-fused-3-S,S-dioxodibenzothiophene unit to prepare the luminescent material. The bipolar small-molecular luminescent material has good solubility, film-forming property and thin film morphological stability and also has excellent electron and hole transport performances, so that the material can balance injection and transportation of carriers, more electrons and holes are effectively compounded to generate excitons, and a mixing phenomenon with the transportation layer interface between the electrons and the holes, thereby improving luminescent efficiency of a device. A luminous layer, based on the material, is free of annealing treatment during preparation of electroluminescent devices, so that the production process is simple.

The invention discloses a bipolar fluorescent material based on benzo five-membered heterocycle, a preparation method thereof and an organic electroluminescent device, the bipolar fluorescent material has the following structure: or in the structure, X and Y are independently selected from oxygen, sulfur, selenium, tellurium or nitrogen alkyl; R1-R4 are independently selected from hydrogen, deuterium or an alkyl chain; EG1-EG4 is an electrical group, and at least two of the EG1-EG4 are respectively selected from a fluorophore and an auxiliary group with polarity balanced with that of the fluorophore and are independently selected from hydrogen, deuterium or an alkyl chain. By introducing the auxiliary polar group, the unipolar characteristic of the material can be effectively improved, and charge injection is balanced. In addition, on the premise that the structure of a light-emitting area is not affected basically, the material structure is twisted, the material stacking effect is weakened, the aggregation quenching effect of a phosphor is reduced, the device stability and the adaptive doping concentration are improved, and regulation and control and yield improvement in the large-scale production process are facilitated.

The invention relates to a high-efficiency organic single-layer light-emitting diode and a preparation method thereof. The structure of the diode is sequentially provided with a glass substrate, a chlorinated indium tin oxide, a light-emitting layer, an electron injection layer and a metal cathode from bottom to top, wherein the organic single-layer light-emitting diode is not provided with a holetransport layer or an electron transport layer; and the light-emitting layer is a unique organic material of a device. Used chlorinated solvents are chloroform, chlorobenzene and dichlorobenzene separately. After the indium tin oxide is subjected to ultraviolet treatment through the chlorinated solvents, the work function is increased and the hole injection capacity is improved. The performance of the device of which the indium tin oxide is chlorinated by using the dichlorobenzene is the best, the maximum current efficiency is 33.48 candelas per ampere and the maximum power efficiency is 27.51 lumens per watt.