The invention discloses a Fe-Cr-Si ternary amorphous thin film capable of modulating
band gap width and a preparation method thereof, and belongs to the technical field of
semiconductor materials. The Fe-Cr-Si ternary amorphous thin film has the following general formula: Fe3Cr1Six, wherein x is 8-18; along with increase of x from 8 to 18, the
band gap width increases from 0 eV to 0.65 eV; and the thin
film structure is amorphous. Compared with an ordinary binary
transition metal silicide thin film, the Fe-Cr-Si ternary amorphous thin film has the advantages as follows: 1, the Fe3Cr1Six thin film is a novel ternary
semiconductor amorphous thin film and can modulate the
band gap width within a relatively
large range of 0-0.65 eV; and under the action of Cr, the band
gap width can be affected and the amorphous forming capability of the thin film can be increased through addition of one element; 2, the proportion of Si in the Fe3Cr1Six thin film can be conveniently regulated only by changing the number of Fe3Cr1 alloys in a combined
sputtering target, thus obtaining different band gap widths; and 3, the Fe3Cr1Six thin film is amorphous, so that the uniformity of components and the performance can be ensured, and
lattice mismatch and multiphase mixing and other problems during preparation of a crystalline thin film are effectively avoided. Therefore, the Fe-Cr-Si ternary amorphous thin film is applicable to production of near
infrared detectors and other
semiconductor devices with
narrow band gaps.