Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

41 results about "Ternary semiconductors" patented technology

Ternary semiconductors. Abstract. The group of the ternary compounds, which includes the chalcopyrite and many other less well known ordered and disordered semiconductors, has a number of physical properties, which are not found in the simpler binary semiconductors.

Making colloidal ternary nanocrystals

A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core / shell nanocrystals; and annealing the core / shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition.
Owner:EASTMAN KODAK CO

Device containing non-blinking quantum dots

An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core / shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core / shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.
Owner:NANOCO TECH LTD

Ternary semiconductor quantum dot/graphene functional composite material and preparation method thereof

The invention relates to a ternary semiconductor quantum dot / graphene functional composite material. The molecular formula of the ternary semiconductor quantum dot is CdSexTe<1-x>, CdSxSe<1-x> or ZnxCd<1-x>S, wherein x is more than or equal to 0.2 and less than or equal to 0.8, and a product is obtained by adopting the following steps: 1) preparing ternary semiconductor quantum dots; 2) performing surface function modification to the ternary semiconductor quantum dots; and 3) preparation of the ternary semiconductor quantum dot / graphene functional composite material: adding a cross-linking agent into a water dispersion solution for oxidizing graphene, then adding surface-functionally modified ternary semiconductor quantum dots, and reacting to obtain the ternary semiconductor quantum dot / oxidized graphene composite material, performing hydrazine hydrate reduction to obtain the ternary semiconductor quantum dot / graphene functional composite material. The functional composite material is wide in spectral response range, and the light absorption range of the graphene-based composite material can be effectively extended.
Owner:WUHAN UNIV OF TECH

Simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules

The invention relates to a simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules, namely a preparation method of copper-indium-sulfur ternary semiconductor nano particles. The preparation method comprises the steps of: dissolving a copper salt and an indium salt in a certain amount of water, adding a proper amount of mercaptan acid, adjusting pH to a certain range, then adding a sulfur source, uniformly stirring, transferring the obtained solution into a hydrothermal reaction kettle, and carrying out hydrothermal reaction at a certain temperature; and cooling obtained colloidal solution to room temperature, and carrying out centrifugal settling to copper the copper-indium-sulfur semiconductor nano particles. The obtained copper-indium-sulfur semiconductor nano particles are divided into a chalcopyrite phase and a wurtzite phase, wherein the chalcopyrite granules are near-spherical and have granular size of 10-30 nm; and the wurtzite phase is of an irregular shape and a hexagonal laminated structure, and the size of the hexagonal laminated structure is 100-200 nm.
Owner:INST OF PROCESS ENG CHINESE ACAD OF SCI

Bi-metal sulfur group ternary semiconductor nanoparticle and preparation method thereof

The invention provides a bi-metal sulfur group ternary semiconductor nanoparticle, a biocompatible bi-metal sulfur group ternary semiconductor nanoparticle and a preparation method thereof. The general formula of the bi-metal sulfur group ternary semiconductor nanoparticle is AxByCz, wherein A is an IB group metal element, such as Cu and Ag, and 0<x<=3; B is one of a transition metal element of a 3d electronic layer, an IIIA-IVA group metal element and a lanthanide, such as Mn, Fe, Ni, Ga, In, Ag, Sn and Gd, and 0<y<=2; C is a VIA group metal element, such as S, Se and Te, and 1<=z<=2. The preparation method is simple to operate, easy to popularize and high in yield; and the bi-metal sulfur group ternary semiconductor nanoparticle can be used for biomedicine aspects of photoacoustic imaging, magnetic resonance imaging and photothermal therapy and the like after being modified by high polymer materials having biocompatibility.
Owner:SUZHOU UNIV

Photochromic powder, photochromic film, photochromic glass and preparation method thereof

The invention is applicable to the technical field of glass, and provides a photochromic powder, a photochromic film, a photochromic glass and a preparation method thereof. The photochromic powder includes tungsten oxide, oxalic acid, titanium oxide and zinc oxide. The photochromic powder provided by the invention employs titanium oxide, zinc oxide and tungsten oxide to form a trinary semiconductor; through the interband synergistic effect, the trinary semiconductor is more vulnerable to sun light excitation for generation of electron-hole pairs, so as to greatly improve discolouration performance.
Owner:信义超薄玻璃(东莞)有限公司

Method and Apparatus for Light Absorption and Charged Carrier Transport

Embodiments of the invention pertain to the use of alloyed semiconductor nanocrystals for use in solar cells. The use of alloyed semiconductor nanocrystals offers materials that have a flexible stoichiometry. The alloyed semiconductor may be a ternary semiconductor alloy, such as AxB1-xC or AB1-yCy, or a quaternary semiconductor alloy, such as AxByC1-x-yD, AxB1-xCyD1-y or ABxCyD1-x-y (where A, B, C, and D are different elements). In general, alloys with more than four elements can be used as well, although it can be much harder to control the synthesis and quality of such materials. Embodiments of the invention pertain to solar cells having a layer incorporating two or more organic materials such that percolated paths for one or both molecular species are created. Specific embodiments of the invention pertain to a method for fabricating nanostructured bulk heterojunction that facilitates both efficient exciton diffusion and charge transport. Embodiments of the subject invention pertain to a solar cell having an architecture that allows for efficient harvesting of solar energy. The organic solar cell architecture can incorporate a host / guest (or matrix / dopant) material system that utilizes the long diffusion lengths for triplet excitons without compromising light absorption efficiency.
Owner:UNIV OF FLORIDA RES FOUNDATION INC

Y-doped pseudo-ternary semi-conductive cooling material and preparation method therefor

The invention discloses a Y-doped pseudo-ternary semi-conductive cooling material and a preparation method therefor, and relates to a semi-conductive cooling material and a preparation method therefor. The purpose of the present invention is to solve the problem that the existing Bi2Te3 based semi-conductive cooling material is easy to split during cutting process. The formula of the Y-doped pseudo-ternary semi-conductive cooling material is: (Bi2Te3)(1-2x)(Sb2Te3)x(Bi2Se3)x-Y, wherein x is 0.04-0.06 in the formula. The preparation method comprises the following steps: weighing yttrium powder,tellurium powder, bismuth powder, antimony powder and selenium powder as raw materials; performing mechanical alloying on raw materials and performing sample vacuum high-temperature sintering; and finally performing hot pressing molding. Mechanical property of the prepared Y-doped pseudo-ternary semi-conductive cooling material is greatly improved, the problem that it is easy to split is solved,Y-doped concentration is 1% and ZT value of the material at 300K is 0.73 when performing hot pressing molding under 200 degrees. The method is suitable for preparing the semi-conductive cooling material.
Owner:HARBIN NORMAL UNIVERSITY

Fe-Si-Al ternary amorphous thin film with adjustable band gap width and preparation method of thin film

The invention discloses a Fe-Si-Al ternary amorphous thin film with adjustable band gap width and a preparation method of the thin film, belonging to the technical field of semiconductor materials. The thin film comprises the following formula: Fe(1-x-y)SixAly, wherein x is not lower than 50at.% and not higher than 70at.%; y is not lower than 1at.% and not higher than 11at.%; when the total amount of (x+y) is changed to 75at.% from 60at.%, the band gap width of the thin film can be adjusted to 0.65eV from 0.45eV; and the structure of the thin film is an amorphous structure. The film has the following advantages that (1), the Fe(1-x-y)SixAly thin film is a ternary amorphous thin film with adjustable band gap width from 0.45 eV to 0.65eV; Al not only affects the band gap width, but also increases the amorphous forming ability by increasing a component element film; (2), the total amount of (Si+Al) in the film can be conveniently adjusted by changing the quantity of Fe4Alz alloy sheets and the z value in a combined sputtering target to obtain different band gap widths; (3), the thin film is kept amorphous, so that the uniformity of the components and performances can be ensured, and the problems such as lattice mismatch, and multi-phase mixing and the like in the amorphous thin film preparation are effectively avoided. The Fe-Si-Al ternary amorphous thin film with adjustable band gap width provided by the invention is suitable for manufacturing narrow band-gap semiconductor apparatuses such as an infrared detector.
Owner:DALIAN UNIV OF TECH

Preparation method for group I-III-VI tri-element semiconductor nanocrystalline light-emitting film

The invention relates to a preparation method for a group I-III-VI tri-element semiconductor nanocrystalline light-emitting film. The employed technical scheme comprises: mixing a monovalent metal salt of group I elements, a trivalent chlorinated salt of group III elements, a capping agent, a surface coating agent and a nonpolar high-boiling-point solvent, so as to obtain a mixed precursor solution; under the protection of an inert gas, heating the mixed precursor solution from room temperature to 60-180 DEG C, so as to form a clear transparent solution; adding an oleylamine solution of a group VI element, so as to obtain a group I-III-VI tri-element semiconductor nanocrystalline solution; adding a polar solvent, performing centrifugation purifying; and then adding a composition A and a composition B of an LED pouring sealant, so as to obtain the group I-III-VI tri-element semiconductor nanocrystalline light-emitting film. The preparation process is green and environment-friendly, the preparation method is simple, and the prepared semiconductor nanocrystalline light-emitting film has excellent fluorescence performances of quantum dots and good machining performance of an epoxy resin AB glue substrate, and is applicable to solid-state lighting LED.
Owner:LIAONING UNIVERSITY

Method for growing high-quality all-component adjustable ternary semiconductor alloy

The invention discloses a method for growing high-quality all-component adjustable ternary semiconductor alloy. The optimal growing temperature and atom beams of all atoms are determined according to components of all the atoms of the ternary semiconductor alloy, and therefore growing of the ternary semiconductor alloy is controlled and the all-component adjustable ternary semiconductor alloy which is good in crystalline quality and smooth in surface is obtained. The ternary semiconductor alloy has low background electron concentration and high electron mobility and has strong band edge lighting under the room temperature. The method fast determines the optimal growing condition of the ternary semiconductor alloy of any component, and therefore all-component growing is achieved. Growing at the highest growing temperature is ensured, a surfactant is formed in a metal-rich growing condition, and the atom transfer ability is enhanced. The components of the ternary semiconductor alloy are accurately controlled with the growing temperature and the corresponding atom beam condition.
Owner:PEKING UNIV

Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and preparation method thereof

The invention discloses a Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and a preparation method thereof, and belongs to the technical field of semiconductor materials. The Fe-Cr-Si ternary amorphous thin film has the following general formula: Fe3Cr1Six, wherein x is 8-18; along with increase of x from 8 to 18, the band gap width increases from 0 eV to 0.65 eV; and the thin film structure is amorphous. Compared with an ordinary binary transition metal silicide thin film, the Fe-Cr-Si ternary amorphous thin film has the advantages as follows: 1, the Fe3Cr1Six thin film is a novel ternary semiconductor amorphous thin film and can modulate the band gap width within a relatively large range of 0-0.65 eV; and under the action of Cr, the band gap width can be affected and the amorphous forming capability of the thin film can be increased through addition of one element; 2, the proportion of Si in the Fe3Cr1Six thin film can be conveniently regulated only by changing the number of Fe3Cr1 alloys in a combined sputtering target, thus obtaining different band gap widths; and 3, the Fe3Cr1Six thin film is amorphous, so that the uniformity of components and the performance can be ensured, and lattice mismatch and multiphase mixing and other problems during preparation of a crystalline thin film are effectively avoided. Therefore, the Fe-Cr-Si ternary amorphous thin film is applicable to production of near infrared detectors and other semiconductor devices with narrow band gaps.
Owner:DALIAN UNIV OF TECH

Ternary semiconductor PbSnS3 nano crystal and preparation method thereof

The invention relates to ternary semiconductor PbSnS3 nano crystal trithio tin lead and a physical preparation method thereof. The preparation method comprises the following steps: (1) washing a ball milling tank, drying, sealing a powder mixture of high-purity lead powder, tin powder and sulfur powder as raw materials inside the ball milling tank, and performing emptying treatment after the ball milling tank is sealed so as to prevent samples from being oxidized in reaction, wherein the particle size of the added powder is 100+ / -5nm; (2) mounting the ball milling tank on a ball mill for implementing ball milling, adjusting the rotation speed of the motor of the ball mill to be 1200r / minute, and implementing ball milling for more than 5 hours, thereby obtaining the ternary semiconductor nano crystal PbSnS3. The trithio tin lead nano crystal provided by the invention has the beneficial effects of being uniform in size, high in pure phase (no impurity) and good in crystallinity. In addition, compared with a chemical method which has the defects that harsh conditions (high temperature and high pressure) are needed, a reaction precursor is toxic and the like, the preparation method has remarkable advantages that the preparation process is simple, green and environment-friendly, large-scale production can be achieved, and the like.
Owner:WUHAN UNIV OF TECH

Ternary semiconductor laminated composite photoelectrode, and preparation method and application thereof

The invention discloses a ternary semiconductor laminated composite photoelectrode, and a preparation method and an application thereof. The photoelectrode has an effective substance with a chemical formula of TiO2 / ZnO / BiOCl. The preparation method for the photoelectrode comprises the following steps: preparing TiO2 nanowires on FTO through a hydrothermal method so as to obtain a sample substrate1, then preparing a ZnO seed crystal layer on the sample substrate 1 through a sol-gel method, preparing the ZnO seed crystal layer coated sample substrate 1 into a sample substrate 2 covered with a ZnO nanowire array through a hydrothermal method, successively subjecting the sample substrate 2 to cyclic soaking in a Bi(NO3)3 solution, distilled water, a KCl solution and distilled water, then carrying out calcination, annealing and washing so as to obtain the ternary semiconductor laminated composite photoelectrode. Compared with a single TiO2 sample, the TiO2 / ZnO / BiOCl composite photoelectrode provided by the invention has the following advantages: photocurrent intensity is significantly improved; an electron hole recombination rate is reduced; photoelectric performance is significantly reinforced; a photocatalytic reaction is successfully expanded from an ultraviolet light region to a visible light region; the utilization efficiency of solar energy is improved; and the TiO2 / ZnO / BiOClcomposite photoelectrode can be used for photoelectrochemical photolysis of water to produce hydrogen.
Owner:NORTHWEST NORMAL UNIVERSITY

Semiconductor composite photo-anode, production method and application

The invention discloses a binary semiconductor composite photo-anode, a ternary semiconductor composite photo-anode formed by self-assembly, a production method and an application in the aspect of photo-generated cathode protection. The binary semiconductor composite photo-anode is WO3 / BiVO4, a WO3 seed layer is prepared on FTO firstly, then a WO3 nano-plate is prepared, then BiVO4 nano-particles are prepared, and the binary semiconductor composite photo-anode WO3 / BiVO4 is obtained. Meanwhile, the binary semiconductor composite photo-anode WO3 / BiVO4 reacts with Na2S in the electrolyte, Bi2S3 grows in situ, and the ternary semiconductor composite photo-anode WO3 / BiVO4 / Bi2S3 is obtained through self-assembly. Compared with a pure WO3 sample, the composite photo-anode disclosed by the invention has the advantages that the capturing capability on visible light is enhanced, and the photocurrent density, the electron hole transfer rate and the photoelectric property are improved; and the photo-anode has a more excellent photo-generated cathode protection effect and stability on 304SS.
Owner:NORTHWEST NORMAL UNIVERSITY

Ternary semiconductor composite film and preparation method and application thereof

The invention relates to the technical field of photochemical cathodic protection, in particular to a ternary semiconductor composite film and a preparation method and application thereof. The invention aims at providing the ternary semiconductor composite film and the preparation method and application thereof according to the defects pointed in the prior art, and aims at solving the problems that in the prior art, the migration rate of electrons generated after light absorbing of broad-band gaps of a single TiO2 semiconductor material, and the separation effect of the electrons and holes ispoor, so that photo-generated charge recombination and a shorter optical response range are easy to cause. The TiO2 film, TiO2 / CdS film and TiO2 / CdS / ZnFe2O4 film are sequentially prepared on titaniumsheets through the methods such as an anodic oxidation method, a continuous ion layer adsorption method and a hydrothermal method. The ternary semiconductor composite film has the beneficial effects that the photoelectrochemistry property and photogenic cathodic protection property of the TiO2 / CdS / ZnFe2O4 film are significantly improved compared with that of a single TiO2 sample, and the ternary semiconductor composite film has an excellent anti-corrosion protection property on stainless steel.
Owner:NORTHWEST NORMAL UNIVERSITY

A kind of ternary semiconductor lamination composite photoelectrode and its preparation method and application

The invention discloses a ternary semiconductor laminated composite photoelectrode, and a preparation method and an application thereof. The photoelectrode has an effective substance with a chemical formula of TiO2 / ZnO / BiOCl. The preparation method for the photoelectrode comprises the following steps: preparing TiO2 nanowires on FTO through a hydrothermal method so as to obtain a sample substrate1, then preparing a ZnO seed crystal layer on the sample substrate 1 through a sol-gel method, preparing the ZnO seed crystal layer coated sample substrate 1 into a sample substrate 2 covered with a ZnO nanowire array through a hydrothermal method, successively subjecting the sample substrate 2 to cyclic soaking in a Bi(NO3)3 solution, distilled water, a KCl solution and distilled water, then carrying out calcination, annealing and washing so as to obtain the ternary semiconductor laminated composite photoelectrode. Compared with a single TiO2 sample, the TiO2 / ZnO / BiOCl composite photoelectrode provided by the invention has the following advantages: photocurrent intensity is significantly improved; an electron hole recombination rate is reduced; photoelectric performance is significantly reinforced; a photocatalytic reaction is successfully expanded from an ultraviolet light region to a visible light region; the utilization efficiency of solar energy is improved; and the TiO2 / ZnO / BiOClcomposite photoelectrode can be used for photoelectrochemical photolysis of water to produce hydrogen.
Owner:NORTHWEST NORMAL UNIVERSITY

As2SexS3-x ternary semiconductor core composite optical fiber with phosphate glass cladding, and preparation method for As2SexS3-x ternary semiconductor core composite optical fiber

ActiveCN107797176AUse wettingUse featuresCladded optical fibreOptical waveguide light guideFiberSulfur
The invention discloses an As2SexS3-x ternary semiconductor core composite optical fiber with a phosphate glass cladding, and a preparation method for the As2SexS3-x ternary semiconductor core composite optical fiber. The cladding material of the composite optical fiber is phosphate glass, and the fiber core of the optical fiber is made of As2SexS3-x, wherein x is greater than zero and is less than three. According to the invention, the optical fiber combines the excellent photoelectric performances of phosphate glass and As2SexS3-x, so the optical fiber is good in photoelectric performance, has good permeability and high nonlinearity at the near, middle and far infrared bands, and has great application prospect in the fields of non-linear optics, photoelectric detection, biomedical sensing, infrared laser transmission or super-continuum spectrum light sources. The optical fiber makes the reasonable use of the wetness and thermal expansion of the optical fiber cladding and the fire core, takes the phosphate glass as the optical fiber cladding, takes As2SexS3-x as the optical fiber core, is drawn through a melting method, and can be continuously drawn.
Owner:SOUTH CHINA UNIV OF TECH

ternary semiconductor pbsns 3 Nanocrystal and preparation method thereof

The invention relates to ternary semiconductor PbSnS3 nano crystal trithio tin lead and a physical preparation method thereof. The preparation method comprises the following steps: (1) washing a ball milling tank, drying, sealing a powder mixture of high-purity lead powder, tin powder and sulfur powder as raw materials inside the ball milling tank, and performing emptying treatment after the ball milling tank is sealed so as to prevent samples from being oxidized in reaction, wherein the particle size of the added powder is 100+ / -5nm; (2) mounting the ball milling tank on a ball mill for implementing ball milling, adjusting the rotation speed of the motor of the ball mill to be 1200r / minute, and implementing ball milling for more than 5 hours, thereby obtaining the ternary semiconductor nano crystal PbSnS3. The trithio tin lead nano crystal provided by the invention has the beneficial effects of being uniform in size, high in pure phase (no impurity) and good in crystallinity. In addition, compared with a chemical method which has the defects that harsh conditions (high temperature and high pressure) are needed, a reaction precursor is toxic and the like, the preparation method has remarkable advantages that the preparation process is simple, green and environment-friendly, large-scale production can be achieved, and the like.
Owner:WUHAN UNIV OF TECH

Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and preparation method thereof

The invention discloses a Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and a preparation method thereof, and belongs to the technical field of semiconductor materials. The Fe-Cr-Si ternary amorphous thin film has the following general formula: Fe3Cr1Six, wherein x is 8-18; along with increase of x from 8 to 18, the band gap width increases from 0 eV to 0.65 eV; and the thin film structure is amorphous. Compared with an ordinary binary transition metal silicide thin film, the Fe-Cr-Si ternary amorphous thin film has the advantages as follows: 1, the Fe3Cr1Six thin film is a novel ternary semiconductor amorphous thin film and can modulate the band gap width within a relatively large range of 0-0.65 eV; and under the action of Cr, the band gap width can be affected and the amorphous forming capability of the thin film can be increased through addition of one element; 2, the proportion of Si in the Fe3Cr1Six thin film can be conveniently regulated only by changing the number of Fe3Cr1 alloys in a combined sputtering target, thus obtaining different band gap widths; and 3, the Fe3Cr1Six thin film is amorphous, so that the uniformity of components and the performance can be ensured, and lattice mismatch and multiphase mixing and other problems during preparation of a crystalline thin film are effectively avoided. Therefore, the Fe-Cr-Si ternary amorphous thin film is applicable to production of near infrared detectors and other semiconductor devices with narrow band gaps.
Owner:DALIAN UNIV OF TECH

Preparation method of ternary semiconductor catalyst

The invention discloses a preparation method of a ternary semiconductor catalyst. The method specifically comprises the steps as follows: step 1, 1-3 mmol of benzoyl peroxide is added to a mixed solvent of 8-30 mL of acetone and 2-methoxyethanol, 0.2-0.5 mL of methacrylic acid and 0.4-1 mL of isopropyl titanate are sequentially added to the mixed solution, and a light yellow solution is obtained;step 2, after bismuth nitrate pentahydrate is added to the solution obtained in the step 1, the obtained solution is heated at 120 DEG C for 60 min, and a precursor P0 is obtained; step 3, g-C3N4 obtained with a thermal polymerization method is mixed with the P0 in the mass ratio smaller than 2, the obtained mixture is heated at 540 DEG C for 2 h in a tubular furnace where N2-O2 mixed gas is intermittently introduced, and the ternary catalyst is obtained. A heterostructure is constructed to avoid composition of photon-generated carriers, so that the photocatalytic performance of semiconductorsis improved to a certain extent.
Owner:XUZHOU UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products