Preparation method for group I-III-VI tri-element semiconductor nanocrystalline light-emitting film

Abstract

The invention relates to a preparation method for a group I-III-VI tri-element semiconductor nanocrystalline light-emitting film. The employed technical scheme comprises: mixing a monovalent metal salt of group I elements, a trivalent chlorinated salt of group III elements, a capping agent, a surface coating agent and a nonpolar high-boiling-point solvent, so as to obtain a mixed precursor solution; under the protection of an inert gas, heating the mixed precursor solution from room temperature to 60-180 DEG C, so as to form a clear transparent solution; adding an oleylamine solution of a group VI element, so as to obtain a group I-III-VI tri-element semiconductor nanocrystalline solution; adding a polar solvent, performing centrifugation purifying; and then adding a composition A and a composition B of an LED pouring sealant, so as to obtain the group I-III-VI tri-element semiconductor nanocrystalline light-emitting film. The preparation process is green and environment-friendly, the preparation method is simple, and the prepared semiconductor nanocrystalline light-emitting film has excellent fluorescence performances of quantum dots and good machining performance of an epoxy resin AB glue substrate, and is applicable to solid-state lighting LED.

Description

technical field [0001] The invention relates to Ⅰ-Ⅲ-Ⅵ group ternary semiconductor nanocrystals (CuInS 2 , AgInS 2 etc.) The preparation of luminescent thin films belongs to the technical field of new fluorescent materials. Background technique [0002] The relatively mature II-VI and IV-VI semiconductor nanocrystals that have been studied so far contain heavy metal elements such as Cd and Pb, and are highly toxic. The preparation of semiconductor nanocrystals with low toxicity, wide luminescence range, adjustable luminescence peak position, high quantum efficiency (QY), and stable performance has become an urgent need for the synthesis of semiconductor nanocrystal materials. In order to solve the above problems, there are also studies on ternary semiconductor nanocrystal materials, but the existing problems are: first, the quantum efficiency of the synthesized semiconductor nanocrystal materials is low; second, the existing literature reports mostly control the reaction co...

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Problems solved by technology

In order to solve the above problems, there are also studies on ternary semiconductor nanocrystal materials, but the existing problems are: first, the quantum efficiency of the synthesized semiconductor nanocrystal materials is low; second, the existing literature reports mostly by controlling the reaction conditions (temperature and Time) to adjust the fluorescence properties of semiconductor nanocrystals. The fluorescence range of the products obtained by this method is narrow, which is not enough to meet the requirements of practical applications. Third, the synthesized products are mostly stored in highly toxic solvents such as toluene and chloroform, which increases their application. Due to the difficulty of devices such as LEDs; Fourth, solvents such as toluene and chloroform are extremely volatile, resulting in particle agglomeration and greatly attenuating their fluorescence properties

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