57 results about "Spinodal decomposition" patented technology

A low-k dielectric for use as an interlayer for an interconnect structure is provided. The dielectric of the present invention is an alkaline boron silicate glass which when formulated in certain compositional ranges can undergo spinodal decomposition when processed using certain thermal profiles. Spinodal decomposition is a chemical and physical separation of the silicate glass into a distinct interpenetrating microstructure which contains a substantially pure silicon dioxide network and a boron-rich network. The dimension (i.e., scale), and the amount of separation can be controlled through compositional and thermal control during the processing of the silicate glass.

This invention is a method for manufacturing a polymer alloy, by making at least two resins used as components miscible, and inducing the spinodal decomposition for causing phase separation, for forming a co-continuous structure with a wavelength of concentration fluctuation of 0.001 to 1 μm or a dispersed structure with a distance between particles of 0.001 to 1 μm. This invention is also a polymer alloy manufactured by the method. The polymer alloy of this invention can provide a molded article, film, fibers and the like respectively with excellent mechanical properties at high productivity.

A novel FeMnAlC alloy, comprising 23˜34 wt. % Mn, 6˜12 wt. % Al, and 1.4˜2.2 wt. % C with the balance being Fe, is disclosed. The as-quenched alloy contains an extremely high density of nano-sized (Fe,Mn)3AlCx carbides (κ′-carbides) formed within austenite matrix by spinodal decomposition during quenching. With almost equivalent elongation, the yield strength of the present alloys after aging is about 30% higher than that of the optimally aged FeMnAlC (C≦1.3 wt. %) alloy systems disclosed in prior arts. Moreover, the as-quenched alloy is directly nitrided at 450˜550° C., the resultant surface microhardness and corrosion resistance in 3.5% NaCl solution are far superior to those obtained previously for the optimally nitrided commercial alloy steels and stainless steels, presumably due to the formation of a nitrided layer consisting predominantly of AlN.

The reflective liquid crystal display device comprises a polarizing plate disposed forwardly of a liquid crystal cell, a relector which is disposed on backside of the liquid crystal cell and reflects an incident light, and a light-scattering sheet which is disposed forwardly of the reflector and scatters the incident light isotopically. The light-scattering sheet can be prepared with the use of a spinodal decomposition method of coating a mixture liquid containing a plurality of polymers varying in refractive index on a transparent support and evaporating or removing a solvent to form a light-scattering layer having a droplet phase structure. The light-scattering layer includes a light-scattering layer showing a maximum intensity of the scattered-light at scattering angles of 3 to 40°, and a light-scattering layer showing maximums intensity of the scattered-light respectively at smaller angles of 2 to 2° and larger angle thetab.

To provide a structure material having excellent mechanical characteristics and a functional material having excellent regularity, provided are a polymer alloy which is composed of at least two components of thermoplastic resins and of which the structure can be controlled finely and evenly dispersed and a production method of the polymer alloy. With respect to a polymer alloy composed of at least two or more components of thermoplastic resins, a precursor (A) of at least one thermoplastic resin among the thermoplastic resin components composing the polymer alloy is chemically reacted in the co-presence of the remaining thermoplastic resin component (B1) and / or a precursor (B2) of the thermoplastic resin component to induce spinodal decomposition, so that it is made possible to obtain a polymer alloy having excellent regularity and of which the structure is finely controllable and the structure is evenly dispersed.

A light-diffusing layer 16 having at least a bicontinuous phase structure is formed by coating a substrate 14a with a coating liquid composition containing a plurality of resins being different in refractive index with each other, drying the substrate, and heating the resultant to cause spinodal decomposition from the resin-containing layer on a transparent substrate. A transparent conductive layer (or a transparent electrode) 17 may be formed on the light-diffusing layer 16 of the substrate 14a. A liquid crystal cell 13 of a reflective liquid crystal display apparatus may be formed by facing the transparent conductive layer 17 with a reflection electrode 19 formed on the other substrate 14b, and sealing a liquid crystal 18 between a pair of electrodes, 17 and 19. The present invention, therefore, provides a light-diffusing layer capable of uniformly and brightly displaying an image on a screen in a reflective liquid crystal display apparatus of an internal light-diffusing layer system in which the light-diffusing layer is formed on a substrate of a liquid crystal cell.

Biphasic alloys, formed through a spinodal decomposition process, are disclosed. The alloys have improved strength and hardness, over single phase alloys, due to coherency strain between the phases. They are prepared from readily available transition metals, and they can be used to make large, high-strength parts, for example, of types that cannot be made by extrusion, forging or cold working techniques.

A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-μm band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.

The present invention addresses the problem of manufacturing a mat-shaped molded body by forming a concavo-convex shape that is an inverted shape of a transfer surface on a surface to be transferred of a molded body using a transfer mold releasing film in which a concavo-convex layer that does not contain fine particles of 1 [mu]m or more and includes the transfer surface having an arithmetic average roughness Ra of 0.1 to 2 [mu]m and 60-degree gloss of less than 5% is formed on at least one surface of a base material layer. The concavo-convex layer may be a cured product of a curable composition containing one or more types of polymer components and one or more types of curable resin precursor components. At least two components selected from the polymer components and the curable resin precursor components may be phase-separated from each other by wet spinodal decomposition. The transfer mold releasing film may have a haze of 50% or more. The mat-shaped molded body may be an electromagnetic wave shield film. When a concavo-convex shape is transferred using the transfer mold releasing film, a mat-shaped molded body having a low gloss can be manufactured.