212results about How to "Uniform thickness distribution" patented technology

The invention relates to mullite crystal whisker mullite compounding coating layer that the manufacture method includes the following steps: coating the mixture slime of silica sol, aluminum sol and mullite slime in vacuum of the basal material, or coating orderly, under the catalyzing effect of metal fluoride mineralizer, sintering by high temperature. The invention is simple structure, low cost of raw material, acid proof, alkali proof, etc. it could improve the intension of the material and prolong the use life.

A vapor deposition apparatus capable of forming an organic thin film having a good film quality is provided. In the vapor deposition apparatus of the present invention, a tray is disposed in an evaporation chamber, and a feed device feeds a vapor deposition material onto the tray. The tray is placed on a mass meter, which measures the mass of the vapor deposition material disposed on the tray, and a controller compares the measured value with a reference value in order to make the feed device feed the vapor deposition material in a necessary amount. Since the vapor deposition material is replenished when needed, the vapor deposition material does not run short during the film formation, or a large amount of the vapor deposition material is not heated for a long time. Thus, the vapor deposition material does not change in quality.

An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.

The invention discloses a preparation method of a high-molecular nylon powder material used for 3D printing. The method comprises the following steps: 1)placing a nylon material, a nucleating agent and alcohol in a high pressure reaction vessel; 2)operating the high pressure reaction vessel for stirring, introducing nitrogen for protection, heating the material in the high pressure reaction vessel to 130-160 DEG C; 3)insulating and dissolving, insulating the reaction vessel for 2-3 hours, fully stirring, dissolving the nylon material; 4)cooling, depositing and precipitating, controlling the stirring speed of the high pressure reaction vessel, slowly cooling, and gradually completing the precipitation and moulding of the nylon powder; 5)filtering, cooling the material in the high pressure reaction vessel to less than 70 DEG C, transferring the mixture to a filter tank, separating the solvent from the solid; 6)centrifuging, transferring the filter residue to a centrifuge for removing the solvent; 7)drying under vacuum; thoroughly removing the solvent in a vacuum drying machine; and 8)sieving the dried nylon powder, and controlling the particle size of nylon powder at 35-50 mum to obtain the required material.

The resist coating unit (COT) has a spin chuck (41) which holds the wafer to be supplied with a resist liquid, and a process cup (50) which accommodates the spin chuck (41) and exhaustes an atmosphere around the wafer W from a bottom thereof. The process cup (50) comprises a first cup (51) with an outer circumferential wall (61a), and an airflow control member (52) laid out close to the wafer W in the first cup (51) in such a manner as to surround the wafer W. The airflow control member (52) has a vertical cross section of an approximately rectangular shape defined by the upper ring portion (62a) having a cross section of an approximately triangular shape and protruding upward, and a lower ring portion (62b) having a cross section of an approximately triangular shape and protruding downward. An exhaust passage (55) for substantially exhausting the atmosphere around the wafer W is formed between the outer circumferential wall (61a) and the airflow control member (52).

A method for preparing a submicron polyimide self-supporting film by adopting a spin-coating method belongs to the technical field of polyimide self-supporting films. The method comprises the following steps: firstly, preparing a polyamic acid solution, diluting and filtering; preparing a submicron polyamide acid film by adopting the spin-coating method and preliminary drying; secondly, coating the polyamic acid solution with the high solid content on the edge of the submicron polyamide acid film and homogenizing; carrying out thermal treatment and finishing an imidization process; placing a polyimide film with a substrate in a hot mixed solution of deionized water and alcohol; after a period of time, slightly tilting an edge thick film area by using a surgical knife along the edge of the substrate; clamping the thick film area by using tweezers and gradually removing the film from the substrate from the outside to the inside; and drying in air to obtain the polyimide self-supporting film. The film prepared by the method disclosed by the invention has the characteristics of uniformity in thickness distribution, large area, low surface roughness and the like. The method is simple in preparation process and is high in finished product rate.

The present invention provides a structure of a liquid crystal panel, which includes a TFT substrate (1), a CF substrate (3) opposite to the TFT substrate (1), spacers (5) arranged between the TFT substrate (1) and the CF substrate (3), a liquid crystal layer (7) disposed between the TFT substrate (1) and the CF substrate (3), and an enclosing sealant layer (9) arranged between and located along a periphery of the TFT substrate (1) and the CF substrate (3). In a curving direction of the curved liquid crystal panel, the CF substrate (3) includes middle zone (31) and two side edge zones (33) at two opposite sides of the middle zone. The middle zone (31) bears a stress greater than stresses born by the two side edge zones (33). The spacers (51) that are located in the middle zone (31) are arranged to bear a stress that is greater than stresses born by the spacers (53) that are located in the two side edge zones (33) so as to maintain a constant distance between the CF substrate (3) and the TFT substrate (1) and achieve the consistency of cell thickness in the entirety of the curved liquid crystal panel.

The invention discloses a vacuum plating method integrating advantages of magnetron sputtering and multiple-arc ion plating, in particular to a micro-arc ion plating method. The method comprises the steps as follows: a high-frequency impulse electric field with negative 1,200 V to negative 900 V output voltage, 0.5 KHz-60 KHz frequency and 0.5 mu s-30 mu s pulse width is firstly established, a high-frequency impulse signal output from the high-frequency impulse electric field is modulated by an adjustable inductance attenuation and a digital logic circuit and loaded to a rectangular cathode target with an area of 300 mm*100 mm and two ends of an anode vacuum chamber casing with a volume of Phi 450 mm *H 400 mm, and argon (Ar) gas charged into a vacuum chamber is subjected to an ion plating process when volt-ampere characteristics of negative 900 V to negative 600 V voltage, 100 A-300 A current, 1 ms-5 ms pulse width and 3%-15% duty ratio are generated during discharge. The method is simple and stable; and by means of the method, the yield is high, and industrial production can be realized.

The invention discloses a CMAS-resisting ceramic layer and a slurry method for preparing the CMAS-resisting ceramic layer, and belongs to the field of thermal barrier coating materials and preparation for the same. The CMAS-resisting ceramic layer is a LaPO4 ceramic layer. The slurry method is used for preparing the LaPO4 ceramic layer on a YSZ ceramic layer, and the wettability of the LaPO4 ceramic layer to molten CMAS is poor; after thermal treatment of 1250 DEG C is carried out, a mutual reaction layer is formed on the interface between the LaPO4 ceramic layer and the CMAS, so that further permeation of the molten CMAS is effectively prevented, and the original phase stability of the YSZ ceramic layer is maintained. Accordingly, the prepared LaPO4 ceramic layer can prevent permeation of the molten CMAS, has superior CMAS corrosion resistance and obviously prolongs the service life of a thermal barrier coating under the CMAS coupling effect.

Disclosed are an incremental temperature difference bulging device for metal pipes and a bulging method. The incremental temperature difference bulging device comprises a bulging die, an electromagnetic induction heating mechanism and a coil feeding mechanism. A hole punch and a holeless punch are respectively located at two ends of the bulging die, and center lines of the hole punch, the holeless punch and the bulging die coincide. The coil feeding mechanism is located on the outer side of the bulging die, and an electromagnetic induction coil in the coil feeding mechanism is enabled to sleeve the outer periphery of the bulging die and to be coaxial with the bulging die. A clearance is reserved between the electromagnetic induction coil and the bulging die. In the process of heating and bulging, part of pipe blanks rather than the die are heated sectionally, the heated pipes are bulged, incremental temperature difference bulging of pipe parts is realized, forming property of materials is improved, resilience of the pipes is reduced, the problems of unstability and corrugation of the pipes are solved, and the pipe parts uniform in wall thickness distribution are obtained.

At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region. The oxygen-containing gas and the hydrogen-containing gas reacts with each other in the mixing part to produce an oxidation species containing atomic oxygen, and the oxidation species has a maximum concentration at an ejection hole through which the oxidation species is ejected from the mixing part into the process chamber.

The invention discloses a preparation method of a hollow spherical barium-strontium-titanate powder material. The preparation method comprises the following steps of: adopting a hard template method for preparation: using glucose as a raw material, using deionized water as a solvent, and using cetylammonium bromide as a dispersing agent to prepare a carbon-sphere template with negative charges onthe surface; dropping metal precursor solution to the surfaces of the carbon spheres in batches, utilizing in-situ hydrolysis reaction of the surfaces to prepare C@BSTO precursor composite microspheres, removing central carbon cores by high-temperature calcination, and obtaining hollow spherical barium-strontium-titanate powder with cubic perovskite phase. For the obtained powder, the size is uniform, the crystallinity and the dispersity are good, the size can be adjusted to be 0.7-3mu m by controlling the concentration of metal ions, and the shell layer is about 90-300nm in thickness. The preparation method disclosed by the invention has the beneficial effects that the raw materials are easy to obtain, the hazard to the health of a human body is less due to no toxicity and corrosiveness,the requirements for equipment are low; in addition, the preparation method has the characteristics that the process is simple, the process parameters are easily controlled, the product is stable in quality and is easily industrialized.

The invention relates to a method and a device for preparing a diamond film doped with ultrafine nano-structural metal particles. The device for preparing the diamond film doped with the metal particles comprises a control system, a target material system, a workpiece control system and an auxiliary system. The method comprises the following steps of: focusing strong laser emitted by a high-power pulse laser device on the surface of a high-purity graphite target material under vacuum; inducing a large quantity of plasmas by using high-energy laser to bombard the surface of a base material which is uniformly heated in advance at a high speed; and performing rapid phase transition on the surface of the base material to form the diamond film. Laser emitted by a quasimolecule laser device is focused on a metal target material, a large quantity of plasmas consisting of a large quantity of metal particles are induced on the surface of the metal target material by using high-energy-density laser to bombard the surface of the prepared diamond film, and gaps on the surfaces of the particles of the diamond film are effectively and tightly filled by a large number of metal particles to form a uniform metal film. By the method and the device, the surface of the diamond film is modified, and the compression strength and the abrasion resistance of the diamond film are improved.

An apparatus for manufacturing a multi-layered information recording medium of the present invention is an apparatus for manufacturing the multi-layered information recording medium for discharging a stiffening resin to a substrate while relatively moving at least one of the substrate and ink jet heads wherein the apparatus has a plurality of ink jet heads disposed on every different kind of the discharged stiffening resin, and constituted so as to stack-coat the stiffening resin to the substrate. With the constitution, a resin intermediate layer of a thick film, for example, greater than 10 μm having uniform thickness distribution and excellent in surface smoothness can be formed.

A non-woven bast cloth for the inner surface of car top and the liner of artificial leather used for car, or as polishing material for steel, copper, or aluminium is prepared from bast fibres through airflow netting, immersing and adhering. Its advantages are high tension strength and temp stability, good moisture and air permeability, and high heat insulation.