Method and device for preparing diamond film doped with ultrafine nano-structural metal particles

A diamond film and metal particle technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of low bonding strength of diamond film thickness film and substrate, which limits the promotion and control of the industrialization of diamond film preparation Complicated and other problems, to achieve the effect of improving the degree of bonding, prolonging the service life, and uniform thickness distribution

Active Publication Date: 2012-04-11
山西亚德玛斯材料科技有限公司
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  • Claims
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Problems solved by technology

[0004] The various methods for preparing diamond films mentioned above have the problems of huge equipment, complex control, thinner diamond films and lower bonding strength between films and substrates. These shortcomings limit the industrialization of diamond films.

Method used

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  • Method and device for preparing diamond film doped with ultrafine nano-structural metal particles
  • Method and device for preparing diamond film doped with ultrafine nano-structural metal particles

Examples

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example 1

[0031] Use absolute ethanol and deionized water to clean the surface of the silicon-based alloy, clamp the cleaned silicon-based alloy on the heating device 25, and then fix the metal target 10 and the graphite target 19 on the metal target brackets 9 and 19 respectively. On the graphite target support 18, the rotating base A7 and the rotating base B16 are adjusted so that the included angles between the metal target 10 and the graphite target 19 and the surface of the silicon-based alloy in the horizontal direction are 135° and 45°, on the side of the silicon-based alloy. After attaching the temperature sensor 12, adjust the position of the table 14 so that the vertical distance from the upper surface of the silicon-based alloy to the lowermost end of the graphite target 19 is 2.5 mm. Use the vacuum pump 31 to pump the gas in the airtight working chamber 21, observe the pressure indicator 2, and make the internal pressure reach 3×10 -3 Pa, the computer 26 controls the heating...

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Abstract

The invention relates to a method and a device for preparing a diamond film doped with ultrafine nano-structural metal particles. The device for preparing the diamond film doped with the metal particles comprises a control system, a target material system, a workpiece control system and an auxiliary system. The method comprises the following steps of: focusing strong laser emitted by a high-power pulse laser device on the surface of a high-purity graphite target material under vacuum; inducing a large quantity of plasmas by using high-energy laser to bombard the surface of a base material which is uniformly heated in advance at a high speed; and performing rapid phase transition on the surface of the base material to form the diamond film. Laser emitted by a quasimolecule laser device is focused on a metal target material, a large quantity of plasmas consisting of a large quantity of metal particles are induced on the surface of the metal target material by using high-energy-density laser to bombard the surface of the prepared diamond film, and gaps on the surfaces of the particles of the diamond film are effectively and tightly filled by a large number of metal particles to form a uniform metal film. By the method and the device, the surface of the diamond film is modified, and the compression strength and the abrasion resistance of the diamond film are improved.

Description

technical field [0001] The invention relates to the field of artificially manufacturing diamond thin films, in particular to a method and a device for preparing diamond thin films doped with ultra-fine nano-structured metal particles, which are especially suitable for preparing large-area diamond thin films. Background technique [0002] Diamond film has many excellent properties, such as high hardness and good wear resistance, excellent chemical stability and high thermal conductivity, as well as high temperature resistance and radiation resistance. Many excellent properties play an important role in many industrial and new technology fields. Now people have a variety of methods to prepare diamond thin films, and have been initially used in mechanical, electrical, optical, acoustic and so on. [0003] In 1955, Bundy and others of General Electric Company of the United States used graphite as carbon source and transition metals such as Fe, Ni and Co as catalysts to synthesi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/14C23C14/22
Inventor 任旭东阮亮皇甫喁卓张永康杨慧敏占秋波周建忠戴峰泽孙桂芳
Owner 山西亚德玛斯材料科技有限公司
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