181results about How to "Reduce the difficulty of packaging" patented technology

An multi-speed automatic transmission providing at least nine forward speeds and one reverse speed, includes four planetary gear sets, six shift control elements, an input shaft, an output shaft, and a transmission case. Each planetary gear set includes a sun gear, a pinion gear set, a carrier that rotatably supports the pinion gear set, and a ring gear. A carrier of a first planetary gear set is connected to the ring gear of a second planetary gear set and a carrier of the second planetary gear set is connected to the ring gear of the first planetary gear set. The first and second planetary gear sets are concentrically arranged in a common plane.

The application exposes a miniature four-channel circular flow type triaxial silicon jet gyro; the jet gyro comprises a four-channel circular flow type triaxial angular velocity sensitive element and a PCB, and the sensitive element is electrically connected with the PCB, wherein the sensitive element comprises a PMMA upper cover, an upper silicon board, a lower silicon board, a PMMA bottom cover and a piezoelectric ceramic round oscillator; the piezoelectric ceramic round oscillator is embedded in the PMMA upper cover; the upper silicon board is provided with a jet network; the lower silicon board is provided with a jet network and a hot line; the PMMA upper cover, the upper silicon board, the lower silicon board and the PMMA bottom cover are successively bonded to form the sensitive element. The jet gyro adopts one piezoelectric ceramic round oscillator to drive four-channel circular flow, not only is simple in structure, long in life and low in power consumption, and implements deformation direction of the piezoelectric ceramic round oscillator and direction turning of jet flow network planes; the area of the piezoelectric ceramic round oscillator is large, the driving ability is strong, the jet velocity is high, and the jet gyro sensitivity is high; and angular velocities of three orthogonal directions can be sensitive at the same time, and multi-axis integration is achieved.

The invention discloses a silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems (MEMS), the air pressure sensor mainly comprises a resonance beam membrane silicon chip, a lower cover substrate, a support substrate, a metal tube seat and a tube cap. The lower cover substrate and the resonance beam membrane silicon chip are in vacuum bonding to form a reference vacuum cavity, and the support substrate which is relatively small is fixed on the metal tube seat to isolate packaging stress and thermal stress. According to pressure difference between atmosphere to be measured and the reference vacuum cavity, axial direction stress of a clamped microstructure beam on a pressure membrane is changed, thus resonant frequency of the beam is changed, change of the resonant frequency is detected and air pressure measurement is realized. According to the invention, a resonator is placed in an air pressure medium, packaging difficulty is lowered substantially, and the packaging stress and thermal stress are isolated through cantilever supporting. The silicon resonant air pressure sensor has the advantages of simple manufacture and packaging, good stability and the like, and is suitable for high performance air pressure measurement.

The invention relates to a high-power semiconductor fiber-coupled laser and a coupling method thereof. Laser diodes are arranged at the same height level. Fast axis collimators FAC are arranged on the front ends. Slow axis collimators SAC are directly arranged on a bottom plate and are plano-convex lenses which integrally tilt. As the distance to a focusing lens is further, the thickness of the slow axis collimators SAC descends. The laser diodes produce a number of beams of the same height. Through the fast axis collimators FAC and the slow axis collimators SAC, high and low parallel beams are produced, are reflected to the focusing lens through the respective reflector, and are focused on a fiber. According to the invention, the slow axis collimators which integrally tilt are used to replace ladder heat sink to realize a height difference after beam adjusting; the processing accuracy is easily ensured; package components are reduced; the package difficulty is reduced; all components are horizontally arranged on the bottom plate; the laser has the advantages of simple and lightweight structure, small size, light weight and low material consumption; the number of coupled chips can be increased; and a laser of higher power can be produced.

The invention discloses a wavelength division multiplex light receiving assembly. The wavelength division multiplex light receiving assembly comprises a plane light waveguide integrated wavelength division multiplex chip (1), a light detector chip array (2) and an optical fiber assembly (3), wherein a coupling port (31) of the optical fiber assembly (3) is coupled and stuck with an input end of the plane light waveguide integrated wavelength division multiplex chip (1); the light detector chip array (2) is located under an output end face (12) of the plane light waveguide integrated wavelength division multiplex chip; light sensitive faces (21, 22, 23, 24...) of the light detector chip array are correspondingly aligned with output waveguides (121, 122, 123, 124...) of the plane light waveguide integrated wavelength division multiplex chip (1); and an included angle of 40-50 degrees is formed between the output end face (12) of the plane light waveguide integrated wavelength division multiplex chip and a waveguide face (13), so that the output end face (12) can be used for outputting light reflection parallel to the waveguide face (13) from the waveguide face to be coupled with the light sensitive faces of the light detector chip array. According to the wavelength division multiplex light receiving assembly, the solution multiplexing of a light signal is finished by the plane light waveguide integrated wavelength division multiplex chip and the output end face of the plane light waveguide integrated wavelength division multiplex chip is used as a light reflection face, so that the optical fiber assembly is used as a light input channel. According to the wavelength division multiplex light receiving assembly, a light path structure is extremely simplified, the stability of a light path is enhanced and the coupling packaging difficulty is reduced, so that the integration and low cost of the wavelength division multiplex light receiving assembly are realized.

The invention belongs to the technical field of fuel cell, specifically relates to a proton exchange membrane fuel cell sealing structure. The invention further discloses a self-locking fuel cell sealing assembly structure. The structure relates to a fuel cell monomer, wherein the fuel cell monomer comprises a bipolar plate and a membrane electrode assembly. The bipolar plate comprises an upper monopolar plate and a lower monopolar plate. The proton exchange membrane fuel cell sealing structure is characterized in that: cross-section shapes of an upper sealing ring and a lower sealing ring are concave, the concave parts of the upper sealing ring and the lower upper sealing ring are arranged toward a gas flow field region; a bonding agent layer is arranged between the edge part of a proton exchange membrane and an annular support bench of a membrane electrode support part to bond and fix the edge part and the annular support bench. The structure provided by the present invention has characteristics of simpleness, reliability, easy processing, outer leakage resistance and inner leakage resistance (blow-by of the anode and the cathode).

The invention discloses a production method of a high-sensitivity biochemical sensor based on a resonance type micro-cantilever structure. The biochemical sensor is produced on a silicon substrate by using a micro-nano processing technology and taking a cantilever as a structural unit, namely the cantilever and an affiliated structure thereof are produced on a silicon slice by using a photoetching technology and a dry etching technology; an electrical induction element is produced by using an ion injection technology and an electronic beam evaporation technology, so that the element has a function of self-detecting a detection signal; a package cover slice is produced by a design die by a polymer solidifying, demolding and bonding technology. According to theproduction method, the production precision and the yield of the high-sensitivity biochemical sensor are greatly improved; the production method can be used for producing the sensors on a large scale; the production cost is effectively reduced. Moreover, the production method can be also applied to production of micro-electromechanical system (MEMS) devices with other structures, such as a double-end fixed supporting structure, a interdigital accelerator and other capacitance and resistance type sensors.

The invention discloses a four-level topological unit which comprises a first switching tube, a second switching tube, a third switching tube, a fourth switching tube, a fifth switching tube, a sixth switching tube and diodes reversely connected at both ends of the switching tubes in parallel. Compared with the diode-clamped four-level topological unit in the prior art, the number of the clamped diodes used is reduced by four. Compared with the flying capacitor four-level topological unit in the prior art, the number of the capacitors used is reduced by 3 in the process of applying the four-level topological unit to a four-level inverter. Therefore, the four-level topological unit used to form the four-level inverter can reduce the number of semiconductor apparatuses in the four-level inverter to effectively lower the cost of the inverter and simplify the structure of the inverter so as to reduce the packaging difficulty. The invention further discloses various four-level inverters and a four-level direct current-alternating current converting chip.

The invention belongs to a five-bit X wave band phase shifter matched with an X wave band communication device for use. The five-bit X wave band phase shifter comprises a CPW (circular polarized wave) signal line rotatably arranged on a base plate and chamfering at exterior angles of corners, an insulating layer and CPW (coplanar waveguide) ground wires, an MEMS (micro-electromechanical systems) switch beam, a support plate, an upper polar plate and a lower polar plate of an MAM capacitor as well as an MEMS switch group consisting of components inside a supporting piece thereof. A connecting bridge, a bias electrode and an insulating layer are arranged between the CPW ground wires at the front and rear ends of the corners cross the CPW signal line. The positive electrode and the negative electrode of the bias electrode are connected with a lead. The base plate with the insulating layer is arranged on the upper surface. Compared with a conventional five-bit X wave band phase shifter, the five-bit X wave band phase shifter has the advantages that the area of the five-bit X wave band phase shifter provided by the invention is reduced by nearly 1 / 3, meanwhile the performance and the stability of the phase shift are improved. Therefore, the five-bit X wave band phase shifter is compact in structure, small in volume, high in strength and stability, low in insertion loss, large in Q value and high in phase shifting precision, and can be processed with high precision and large scale. Meanwhile, the packaging difficulty and the production cost in the production process are reduced and the like.

The invention discloses a one-sided packaged U-shaped hollow fiber membrane element and component. The hollow fiber membrane element comprises a U-shaped hollow fiber membrane cluster, a sealing head and a central transverse diaphragm, wherein the central transverse diaphragm is positioned inside the U-shaped hollow fiber membrane cluster; the head end and the tail end of the U-shaped hollow fiber membrane cluster, one end of the central transverse diaphragm or a near end part at one end are sealed in the sealing head. According to the hollow fiber membrane element, different upper and lower end covers, membrane shells, inlets / outlets and central transverse diaphragms are matched, different types of hollow fiber membrane elements in external pressure, internal pressure, immersion and aeration can be formed, and the membrane element is high in universality. The hollow fiber membrane element and component adopt a one-sided packaged mode, and the assembling and packaging difficulty is reduced, so that the element is compact in structure, high in flexibility and simple and reasonable in sealing design, and a leakage risk of the element in the using process is reduced.

The embodiment of the invention discloses a sensor module, which comprises a sensor chip and at least one first auxiliary chip, wherein the sensor chip and at least one first auxiliary chip are packaged into a chip packaging body by use of a plastic packaging material; the sensor chip comprises a sensing unit; a groove structure is formed in the edge of the back surface of the sensing unit; at least one first through hole is formed in the bottom of the groove structure and leads out a bonding pad through a metal layer to form a welding pad of the sensor chip; the metal layer extends to the back surface of the sensing unit along the groove structure from the first through hole; the groove structure is filled with the plastic packaging material and is connected with the plastic packaging material at the outer side of the sensor chip into a whole; a rerouting pattern is formed on the back surface of the chip packaging body and is electrically connected with the welding pad of the sensor chip and the welding pad of the at least one first auxiliary chip; and a plurality of salient points are also formed on the rerouting pattern. By the sensor module, the mechanical reliability of the sensor module is improved.

A park assembly includes a park gear, a pawl that engages and disengages the park gear, a park rod that causes the pawl to engage with the park gear and to disengage from the park gear, a servo, and a bellcrank transmitting a first force to the park rod causes the pawl to disengage from the park gear in response to a second force substantially greater than the first force and produced by the servo.

The invention provides a heat sealing film. The film comprises a first polyethylene layer, a first metallocene polypropylene layer and a polypropylene layer which contact in sequence, wherein the first metallocene polypropylene layer comprises not less than 25% by mass of a metallocene ethylene-propylene copolymer. The invention also provides a preparation method of the heat sealing film. The preparation method comprises the following steps: carrying out extrusion molding on polyethylene, the metallocene ethylene-propylene copolymer and polypropylene to obtain a hot melt tube containing the first polyethylene layer, the metallocene polypropylene layer and the polypropylene layer which contact in sequence; blow molding the hot melt tube into the film, and cooling and shaping; and carrying out corona processing on an outer surface of the cooled and shaped film to obtain the heat sealing film. The heat sealing film with good performances can be obtained through controlling the thickness of the heat sealing film provided by the present invention in a thin scope, so the packing difficulty is reduced and the packing speed is improved.

The invention relates to a method for preparing hidden-type emitter silicon solar cells, which adopts a quadratic diffusion process. The method comprises the following steps: 1. laser boring; 2. cleaning, radiation damage removing and suede preparation; 3. diffusion; 4. hiding launching area; 5. emitter area corrosion and periphery joint removing; 6. hiding removing; 7. oxidizing and surface passivation; 8. screen printing electrode; and 9. sintering. The method can prepare the hidden-type emitter silicon solar cells.

The invention discloses a four-level topology unit comprising a first switching tube, a second switching tube, a third switching tube, a fourth switching tube, a fifth switching tube, a sixth switching tube, a first clamping diode, a second clamping diode and six diodes. Compared with the diode clamping type four-level topology unit in the prior art, the four-level topology unit disclosed by the invention has the advantages that two clamping diodes are reduced, so that the cost of an inverter is effectively reduced, the structure of the inverter is simplified and the encapsulation difficulty is lowered. Compared with the flying capacitor type four-level topology unit in the prior art, the four-level topology unit disclosed by the invention has the advantages that three capacitors can be reduced when the four-level topology unit is applied to a four-level inverter; and as the cost of the capacitor is far higher than that of the diode, the cost of the inverter is effectively reduced. The invention also discloses a variety of four-level inverters and a four-level direct-current / alternating-current converting chip.

The invention relates to a semiconductor laser side pump module comprising one or more side pump module units and a crystal bar, wherein each side pump module unit comprises a baseplate, a semiconductor laser module fixed on the baseplate, a fast axis collimator arranged at the front end of the semiconductor laser module and a beam expander arranged behind the fast axis collimator, and the crystal bar is arranged behind the beam expander; the semiconductor laser module comprises a bar; and the side pump module unit also comprises a homogenizing mirror arranged between the beam expander and the crystal bar. The side pump module can ensure that the beam homogeneity and the energy density of a pumping semiconductor laser satisfy the operating requirement by utilizing fewer high-power semiconductor laser arrays as the pumping source after beam expansion and homogenization.

The present invention is directed to a system and method for actuating an engine valve. In one embodiment, the present invention is a system for providing exhaust gas recirculation (EGR) in an engine having at least one engine valve, the system comprising: means for imparting a valve train motion; a first valve actuation subsystem for transferring motion from the motion imparting means to the engine valve, the first valve actuation subsystem capable of providing valve actuation for at least a portion of a main exhaust event during a first engine operating condition, and a full main exhaust event during a second engine operating condition; and a second valve actuation subsystem for transferring motion from the motion imparting means to the engine valve, the second valve actuation subsystem capable of providing valve actuation for an exhaust gas recirculation event during the first engine operating condition.

Provided are a high-power array light-emitting diode (LED) chip surface radiating structure and a manufacturing method thereof. An aluminum nitride layer and a copper layer are sequentially deposited in an isolation groove between light-emitting units of the array LED chip from bottom to top to form a grid metal layer, namely a heat sink channel used for guiding out the heat produced by the light-emitting units of the chip is formed between the light-emitting units of the chip. The structure and the method can effectively improve the radiating performance. The process is simple and easy to achieve, the radiating structure is suitable for laboratory research and development and batch production, the technical difficulty of the existing high-power array LED chip radiating can be effectively solved, and the structure and the method are of great significance in achievement of high-power LED lighting.

The invention provides a four-level inversion topological unit. The four-level inversion topological unit comprises four switching tubes which are connected in parallel with diodes in reverse direction and two diodes. According to the conventional four-level inverter, due to a large number of semiconductor devices, the cost of the inverter and the cost of an application circuit of the inverter are improved, and the packaging difficulty of the inverter and the packaging difficulty of the application circuit of the inverter are improved. The four-level inversion topological unit provided by the invention has the advantages that when single-phase application and multi-phase application are realized, direct current is inverted into alternating current, the quantity of the semiconductor devices of the whole inverter is decreased, the four-level inversion topological unit is small in size and low in cost, and the packaging difficulty of the application circuit of the inverter is reduced.

The invention discloses a base plate packaging device. A base plate back cover is packaged on a coated base plate, and the edge of outer frame of display module of the base plate back cover is coated with an inner packaged powder layer and is covered on the coated base plate to form a base plate to be packaged. The base plate packaging device includes a working platform, a laser generation device and a positioning platform. The working platform is provided with a transverse beam; a supporting piece is connected between the transverse beam and the working platform; the positioning platform is slidingly disposed on the working platform; the laser generation device is slidingly mounted on the transverse beam, and the laser head of the laser generation device is over against the positioning platform; the part of the transverse beam close to the laser generation device is provided with a positioning lens corresponding to the positioning platform; the base plate to be packaged is positioned by the positioning platform through the positioning lens; the inner packaged powder layer on the positioned base plate to be packaged is scanned by the laser head to form an integrated packaged base plate, so that the base plate back cover can be packaged on the coated base plate under atmosphere to reduce production cost.

The invention relates to a preparation method of a micro LED device. The preparation method comprises the following steps of preparing nanometer LED particles; providing nanometer conductive particlesand an adhesive, and performing mixing on the nanometer LED particles, the nanometer conductive particles and the adhesive to obtain a first mixture; providing a substrate, and forming a first electrode layer on the substrate; coating the first electrode layer with the first mixture and performing curing treatment to form a composite layer; and forming a second electrode layer on the composite layer to obtain the micro LED device. By virtue of the preparation method of the micro LED device, the transferring and packaging difficulty of the nanometer LED particles can be lowered, the productionefficiency is improved and the production cost is lowered.

The present invention provides a mobile terminal with a fingerprint sensor packaging structure and a preparation method thereof. A fingerprint sensor assembly in the mobile terminal comprises two independent portions. The first portion is a sensor injection-molded part, which comprises a semiconductor sensor die and a sensing pixel array on the surface of the semiconductor sensor die, a base which is used for bearing the semiconductor sensor die and is electrically connected with pins of the sensor die, a bonding lead used for electrically connecting the pins of the sensor die and base pins, and an injection-molded material wrapping the sensor die (including the sensing pixel array on the surface), the bonding lead and the base. The second portion comprises a substrate which is used for bearing the sensor injection-molded part and is electrically connected with the sensor injection-molded part, a connector connected with the substrate, and a metal frame embedded to the periphery of the surface of the sensor injection-molded part. According to the fingerprint sensor assembly of the mobile terminal, size of a fingerprint sensor module can be largely reduced, and the fingerprint sensor assembly is especially suitable for a mobile terminal or device having severe requirements on spatial scale.

The invention belongs to the technical field of microfluidics, and provides a digital microfluidic system. The digital microfluidic system includes a microfluidic chip and a control circuit, wherein the microfluidic chip includes a bottom electrode plate, the bottom electrode plate includes a plurality of electrodes, and the control circuit is used for separately controlling each electrode to be grounded or powered on and achieving the total area of the grounded electrodes at least five times the total area of the powered electrodes. Therefore, an electric potential difference capable of driving droplets can be formed sufficiently, and the electrodes can be controlled to be grounded through switches without grounding of a top cover or arrangement of a small grounding electrode in the bottom electrode array, so that the packaging difficulty of the digital microfluidic system is reduced.

The invention discloses a wavelength division multiplexing light emission device based on an array waveguide grating. The wavelength division multiplexing light emission device comprises a miniaturized encapsulation laser device, wherein the miniaturized encapsulation laser device is in coupling connection with an input end surface of a planar optical waveguide integrated wavelength division multiplexing chip sequentially through a ceramic plug core, a first connecting fiber and a four-channel fiber array, and an output end of the planar optical waveguide integrated wavelength division multiplexing chip is connected with a light output port through a second connecting fiber; and one end of the first connecting fiber is fixed in the four-channel fiber array, the end surface of one end of the first connecting fiber is polished to form a first coupling port of a fiber assembly, one end of the second connecting fiber is fixed in a glass capillary, and the end surface of one end of the second connecting fiber is polished to form a second coupling port of the fiber assembly. The wavelength division multiplexing light emission device based on the array waveguide grating has the beneficial effects that the encapsulation difficulty is low, the encapsulation efficiency is high, and the reliability and stability of an optical path are high; the preparation cost is low, and the coupling efficiency is high; the producibility is extremely strong, and the repairability is high; and the wavelength division multiplexing light emission device can be widely applied to the wavelength multiplexing of light emitting devices.

The invention discloses a sensor encapsulation structure and method, and relates to the technical field of sensor encapsulation. The sensor encapsulation structure comprises a line base plate, a prefabricated base plate, MEMS pressure sensors, a first rubber matrix, an ASIC chip and a second rubber matrix. The prefabricated base plate comprises a bottom plate and a side wall connected with the bottom plate. A cavity with the open upper end is defined by the bottom plate and the side wall. The MEMS pressure sensors are arranged in the cavity and electrically connected with the prefabricated base plate. The MEMS pressure sensors are encapsulated in the cavity through the first rubber matrix. The ASIC chip is electrically connected with the line base plate. The bottom plate of the prefabricated base plate is electrically connected with the line base plate. The ASIC chip and the prefabricated base plate are encapsulated on the line base plate through the second rubber matrix. The sensor encapsulation structure is high in reliability, the sensor encapsulation method is low in encapsulation difficulty, and the situation that a special mold is prefabricated in advance is not needed in theencapsulation process of the MEMS pressure sensors, so that the development cost in the early stage is greatly reduced.

The invention relates to the technical field of a laser, in particular to a semiconductor laser unit of a single chip optical fiber coupling output. The semiconductor laser unit comprises a shell, wherein a heat sink is arranged in the shell and is provided with a single tube chip; the semiconductor laser unit further comprises a laser beam shaping system, a flat head optical fiber, a mortice and a sleeve, wherein the laser beam shaping system is located in the shell, the single tube chip is coupled with and aimed at the front end of the flat head optical fiber through the laser beam shaping system, the flat head optical fiber is arranged in the mortice which is sleeved in the sleeve, and the sleeve is fixed on the outside surface of a pipe orifice of the shell. The semiconductor laser unit provided by the invention is simple in structure, light beams which pass through the laser beam shaping system are directly coupled to the flat head optical fiber preloaded into the mortice, and then are fixed on the outer surface of the shell through the sleeve to realize laser output and optical fiber pigtail packaging, so that the packaging difficulty of products can be reduced, and the cost can be reduced; meanwhile, the product reliability and quality can be critically improved.

The invention provides a four-level inverter topological unit. The four-level inverter topological unit comprises four switching tubes of diodes in reverse parallel connection and two diodes; and relative to the technical problems that a large number of semiconductor devices are arranged in the conventional four-level inverter, the cost for the inverter and reference circuits thereof is increased, and the packaging difficulty of the inverter and application circuits thereof is increased as a large number of semiconductor devices are arranged in the four-level inverter, the four-level inverter topological unit provided by the invention reduces the number of the semiconductor devices in the entire inverter while realizing single-phase and multi-phase applications and ensuring that direct current is inverted into alternating current, the size is small, the cost is low, and the packaging difficulty of the application circuits of the four-level inverter topological unit is reduced at the same time.

The present invention relates to the field of chip packaging and in particular to a TSV-based multi-chip package structure and a method for fabricating the same. The multi-chip package structure comprises an interconnection structure; a first chip disposed on the interconnection structure; an adapter plate disposed on the interconnection structure at the same side as well as the first chip, and having a thickness greater than that of the first chip; a second chip disposed on the adapter plate and opposite to the interconnection structure; and a packaging layer. By means of the interconnectionstructure and the adapter plate which has a certain thickness and on which the second chip is mounted, the first chip and the second chip can be located on two planes at different heights, thereby realizing the three-dimensional package of the multiple chips. Compared with the prior art, the package structure provided by the present invention has the size sum of the first chip and the second chipno longer limited by the plan view size of the interconnection structure, thereby expanding the diversified development of the chip packaging structure.

An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.

The invention provides an audio input and output device and an audio input and output method. The device comprises a microcontroller, an audio input port and an audio output port. An output port of the microcontroller is connected to an input port of a digital-to-analog converter; an output port of the digital-to-analog converter is connected to a first input port of a first operational amplifier through a first switch; the audio input port is connected to a first input port of the first operational amplifier through a second switch; an output port of the first operational amplifier is connected to a first input port of a voltage comparator; an output port of the voltage comparator outputs comparative level to the microcontroller; the output port of the first operational amplifier outputs signals to a first input port of the second operational amplifier; a third switch and an adjustable resistor connected in parallel are connected between the first input port of the second operational amplifier and an output port of the second operational amplifier. The audio input and output method is applied to the audio input and output device. According to the audio input and output device and the audio input and output method, noise will not be produced in the process of switching internal sound sources and external sound sources, and the production cost is low.