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117results about How to "Reduce electrical stress" patented technology

Symmetrical half-bridge LLC resonant bidirectional DC-DC converter

ActiveCN102201739AMitigate transient overvoltageMitigate transient overcurrentEfficient power electronics conversionDc-dc conversionResonant inverterDc dc converter
The invention discloses a symmetrical half-bridge LLC resonant bidirectional DC-DC converter, which belongs to the technical field of power electronic application. Topological structures on the two sides of the converter are symmetrical, and adopted components adopt a complex function design. When a switching network and a resonant network on one side of a high frequency transformer function, the switching network and the resonant network on the other side are automatically evolved into a rectifier-load network, and the networks on the two sides commonly form the whole LLC resonant converter to realize power conversion in a corresponding direction. Because the structures are completely symmetrical, reverse conversion can be possible; and in the reverse conversion, the topological structures can be automatically reconstructed to form a reverse LLC resonant converter to realize reverse power conversion. The symmetrical half-bridge LLC resonant bidirectional DC-DC converter achieves effective improvements in conversion efficiency, power density, dynamic performance and electromagnetic compatibility, reduces the electrical stress of components at work, has a reduced volume and a reduced weight, and realizes highly-efficient, isolated and bidirectional DC/DC power conversion.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING)

Operating method of electrical pulse voltage for rram application

Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element. In embodiments the activating energy can be applied by applying electrical and / or thermal energy to the metal-oxide material.
Owner:MACRONIX INT CO LTD

LED driver circuit with sequential LED lighting control

An LED driver circuit powers a plurality of LED arrays coupled in parallel, each LED array having one or more LEDs coupled in series. A power converter converts an input signal from a power source into an output signal across the LED arrays. A switching element is coupled in series with each of the LED arrays and alternates between first and second switch states in response to lighting control signals. A control circuit generates the lighting control signals and supplies them to the switching elements to sequentially operate one or more of the switching elements in the first switch state during each of a plurality of predetermined time periods in a light emitting state for the LED driver circuit.
Owner:PANASONIC CORP

General high-efficiency long-life driving circuit for wide voltage non-inductance semiconductor illumination

The invention relates to a semiconductor illuminating lamp, in particular to a general high-efficiency long-life driving circuit for wide voltage non-inductance semiconductor illumination. According to the driving circuit disclosed by the invention, the traditional switching power supply and complex circuit topology of a PWM (Pulse Width Modulation) control mode are thoroughly changed, an output capacitor is charged and a load is powered by adopting directly-rectified commercial power, and the charging state of the output capacitor is controlled by utilizing the on-off of a field effect transistor; the on-off of the field effect transistor is controlled by a current flowing through the load so that the stability of an output current is ensured; a current of an LED (Light Emitting Diode) can be effectively controlled in an appropriate range so that the LED is prevented from being burned-out due to lightning effects of power transmission lines and affects of surge currents in switching on / off; and the driving circuit can be manufactured into a standard module, is suitable for large-scale industrialized production and has the advantages that the circuit design is ingenious, the whole circuit is very concise, the cost is low, no large-capacity capacitor is needed, the current stability is high, and the whole life is greatly prolonged, which can be close to the theoretical life about one hundred thousand hours of a semiconductor.
Owner:CHENGDU SURESUN TECH

Alternating current-to-direct current circuit

The invention discloses an alternating current-to-direct current circuit. The circuit comprises a rectification circuit, a BUCK circuit and a voltage detection control circuit, wherein the voltage detection control circuit is provided with a first preset valve used for limiting the lowest work voltage of the BUCK circuit and a second preset valve used for limiting the highest work voltage of the BUCK circuit, and is used for respectively detecting an instantaneous value of pulsating direct current and a voltage value of a low-voltage output end; the voltage detection control circuit outputs a PWM (pulse-width modulation) signal to control the BUCK circuit to work when the instantaneous value of the pulsating direct current is more than the preset vale and less than the second preset valve, and the output voltage Vout of the low voltage output end is less than a third preset value; and when the instantaneous value of the pulsating direct current is more than the second preset value, the voltage detection control circuit controls the BUCK circuit to stop working. The alternating current-to-direct current circuit has the advantages that the BUCK circuit works in a low voltage part of the pulsating direct current by limiting the highest work voltage of the BUCK circuit, so that the efficiency is improved, the circuit does not use high-voltage electrolytic capacitor, and the efficiency is high.
Owner:MORNSUN GUANGZHOU SCI & TECH

Semiconductor device and method for manufacturing the same

At least a laminate of a gate insulating film 6 and a gate electrode 7 and an active region 13 are formed on a silicon substrate 1, and an underlying interlayer insulating film 10 is further formed. Then, a conductor 11a connected to the gate electrode 7, and a conductor 11b that is a dummy conductor and is connected to the active region 13 are formed simultaneously on the underlying interlayer insulating film 10. Thereafter, an interlayer insulating film 12 is formed on the underlying interlayer insulating film 10 by a plasma process. At this time, charging current from a plasma 14 is emitted through the conductor 11b, which is a dummy conductor.
Owner:PANASONIC CORP
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