225 results about "Electric stress" patented technology

Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

A data writing method for writing data sequentially in a cross-point memory cell array having a variable resistive element whose electric resistance is changed by application of an electric stress is provided. When data is sequentially written in memory cells in the same row or column, the writing order of the memory cells to be written is determined according to the length from an electric connection point to a selected memory cell to be written and the increase / decrease direction of the electric resistance of each selected memory cell changed by data writing, the electric connection point being between a write voltage applying circuit, which applies a data writing voltage to a same wiring of the selected word line or bit line connected to the selected memory cell, and the same wiring, and the data writing is executed based on the determined writing order.

In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

A nonvolatile semiconductor memory device includes a memory array (101) in which a plurality of memory cells are arranged in a row direction and a column direction, each of the memory cells being formed by connecting one end of a variable resistive element for storing information according to a change in electric resistance caused by an electric stress and a drain of a selection transistor to each other on a semiconductor substrate, a voltage switch circuit (110) for switching among a program voltage, an erase voltage and a read voltage to be applied to the source line and the bit line connected to the memory cell, and a pulse voltage applying circuit (108). In the state where the program voltage or erase voltage corresponding to the bit line and the source line is applied to the bit line and the source line connected to a memory cell to be programmed or erased in the memory array via the voltage switch circuit (110), the pulse voltage applying circuit (108) applies a voltage pulse for programming or erasing to the word line connected to the gate electrode of the selection.

The invention discloses a rail transit electrical equipment reliability test method. The method comprises the test process with one or more test cycles and the test process of adding one or more on / off test process, performance test process and noise immunity test process in the specific period of one test cycle, wherein the test process with one or more test cycles comprises combination of any stress level and time sequence of one or more of humidity stress test process, temperature stress test process, vibration stress test process and electric stress test process. According to the method, the potential defects of the tested rail transit electrical equipment are completely exposed at the early development stage, the reliability of the rail transit electrical equipment is improved, and the maintenance cost of the rail transit electrical equipment in the full-life period is effectively reduced; the change rule of the tested equipment along with the using time of users can be reflected and basis is provided for quality guarantee; and the reliability index of the equipment can be distributed to the related devices, and the reliability of the rail transit electrical equipment is improved by improving the reliability of the devices.

The present invention discloses a thermal-electric-mechanical multi-stress ageing test platform of extra-high voltage converter transformer paper oil insulation materials and a testing method thereof.The test platform comprises three stress modules; a thermal stress module comprises a heating plate arranged at the outer wall of an ageing test chamber to allow paper oil insulation materials to reach an assigned temperature; an electric stress module is formed by a voltage source and an electrode and is configured to provide a direct current voltage, an alternating current voltage and an alternating current / direct current compound voltage for the paper oil insulation materials, wherein the direct current voltage and the alternating current voltage can reach an assigned voltage level; and amechanical stress module is formed by a vibration table, wherein the vibration table can provide mechanical vibration with assigned frequency and amplitude. When the thermal-electric-mechanical modules work at the same time, the thermal-electric-mechanical modules can provide various stress ageing conditions for the paper oil insulation materials to simulate the complex work conditions of the internal portion of a converter transformer and perform individual regulation of three stresses so as to facilitate analysis and obtain ageing effects of three different stresses for the paper oil insulation materials.

A nonvolatile semiconductor memory device includes a storage element which is programmed with information by breaking an insulating film by application of electrical stress to the storage element, a control switch which controls the application of electrical stress to the storage element, and a control circuit which controls conduction / nonconduction of the control switch. The device further includes a power supply circuit including a voltage generation circuit which generates a first voltage to cause the electrical stress in program operation, a sensing circuit which senses that the insulating film is broken down, and a counter circuit which controls the control circuit to interrupt the application of electrical stress to the storage element when a given period of time elapses after the sensing circuit senses that the insulating film is broken down.

The invention relates to the technical field of the evaluation of thermal vacuum environmental adaptability, and discloses an evaluation method of the thermal vacuum environmental adaptability of elements and components for a spacecraft. The method comprises the following steps: S1, performing stress analysis to the thermal vacuum environment of the elements and components for the spacecraft, so as to fix the vacuum stress, thermal stress and electric stress of thermal vacuum environmental ground tests, S2, fixing the cycle index of the thermal vacuum environmental ground tests, S3, performing thermal vacuum ground testing to the elements and components for the spacecraft according to test conditions fixed through S1 and S2, so as to judge whether samples of the elements and components for the spacecraft are qualified, and S4, evaluating that the thermal vacuum environmental adaptability of the elements and components meets task requirements if the quantity of unqualified samples is smaller than or equal to the acceptance number regulated in a sampling scheme, or evaluating that the thermal vacuum environmental adaptability of the elements and components does not meet the task requirements. The method can rapidly and accurately evaluate performances of the elements and components for the spacecraft under the thermal vacuum environment, and provides a basis for reasonably selecting the elements and components for the spacecraft.

First example embodiments comprise forming a stress layer over a MOS transistor (such as a LDMOS Tx) comprised of a channel and first, second and third junction regions. The stress layer creates a stress in the channel and the second junction region of the Tx. Second example embodiments comprises forming a MOS FET and at least a dummy gate over a substrate. The MOS is comprised of a gate, channel, source, drain and offset drain. At least one dummy gate is over the offset drain. A stress layer is formed over the MOS and the dummy gate. The stress layer and the dummy gate improve the stress in the channel and offset drain region.

Disclosed is an oxide semiconductor thin-layer transistor in which the threshold voltage for electric stress is stable and the variation in threshold voltage in transfer characteristics is minimized. Specifically disclosed is a thin-film transistor comprising an oxide semiconductor layer and a gate insulating layer provided in contact with the oxide semiconductor layer. The thin-film transistor is characterized in that the oxide semiconductor layer contains hydrogen atoms and has a region which functions as an active layer of the oxide semiconductor, the region has at least two regions having different average hydrogen concentrations along the thickness direction of the layer, that is, a first region and a second region in that order as viewed from the gate insulating layer side, and the average hydrogen concentration of the first region is lower than that of the second region.

The present invention discloses a valuation method, a valuation device and a valuation program of dielectric breakdown lifetime of a gate insulating film, used for evaluating dielectric breakdown lifetime of the gate insulating film of a MOS type element. The valuation method includes the following steps of: deciding a Weibull slope of lifetime distribution until reaching a soft breakdown of the gate insulating film of the MOS type element; deciding a detection condition of the soft breakdown from the decided Weibull slope after the above step; and executing a dielectric breakdown test by using the decided detection condition. The valuation device includes: a voltage supply unit to supply a voltage for the MOS type element so as to apply an electric stress to the MOS type element; a current measuring unit to measure a leakage current across the gate insulating film; and a temperature holding unit to hold temperature of a testing element containing the MOS type element to below a room temperature. According to the valuation method, the valuation device and the valuation program, the dielectric breakdown lifetime can be determined suitably.

The invention provides a liquid conductive silastic used for electric stress control, which is prepared by component A and component B according to the weight ratio of 1:1; the component A and the component B both contain 35-80 parts by weight of organopolysiloxane, 40-60 parts of acetylene black and fumed silica and 0.5-2.0 parts of fluorine silicon multipolymer; wherein, the component A further contains catalyst with routine dosage, and the component B further contains 3.0-5.0 parts by weight of organic hydrogenated polysiloxane and inhibitor with routine dosage. The invention further provides a preparation method of the above liquid conductive silastic; the component A and the component B are respectively blended for 6-8h at the temperature of 80-130 DEG C, and are then heated up to 150-175 DEG C and vacuumized for 1-3h, are stirred and cooled, go through a three-roll grinder and are blended evenly, and foam is discharged, finally the liquid conductive silastic is prepared. The liquid conductive silastic provided by the invention has better liquidity, good mechanical property and wide application prospect.