In order to solve the problem that
dislocation and other defects are greatly increased during
seed crystal growth, the invention provides a SiC
single crystal growth method capable of obviously reducing the
dislocation density from the initial growth stage, thereby manufacturing SiC single crystals with lower
dislocation density from the initial growth stage to the final growth stage. The invention relates to a manufacturing method of a
silicon carbide single crystal block. According to the manufacturing method of the
silicon carbide single crystal block, the
silicon carbide single
crystal block is prepared by growing the
silicon carbide single crystals by using a sublimation recrystallization method on the growth surface of seed crystals generated by the
silicon carbide single crystals, in the initial growth stage of the
silicon carbide single crystals, a temperature range of 1200 DEG C to 2000 DEG C is adopted, and maintained for more than 10 minutes, then, the pressure is controlledto be between 100 Pa and 10 Kpa; and the pressure of a furnace body is kept constant, a certain flow of
hydrocarbon gas is introduced into a growth furnace to enable the surface of the seed crystalsto grow homogeneously at a speed of less than 50 mu / h, and after growing for a period of time, the temperature and the pressure are adjusted to conventional growth conditions at a certain speed to obtain a SiC single
crystal ingot with a target thickness.