228results about How to "Improve evenly" patented technology

An electro-polishing fixture for polishing stents which incorporates multiple anodes in contact with the stent and a center cathode disposed coaxially within the interior of the stent and a curved exterior cathode disposed about the perimeter of the stent. The invention further includes an electrolyte solution adapted for polishing stents composed of nickel-titanium alloy and a method of using the electrolyte in combination with the electro-polishing fixture.

An improved substrate for Raman spectroscopy of an analyte comprises a porous metal film. Enhancement factors and uniformity of the substrate can be enhanced by electrochemical roughening of the film. Improved sensors and spectrometers using such substrates are also described.

A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences.

A coated glass mat comprises a glass mat substrate having non-woven glass fibers and a coating which essentially uniformly penetrates the glass mat substrate to desired fractional thickness of the coated glass mat. The coating imparts a tensile strength to the coated glass mat which on average is at least 1.33 times greater than the tensile strength of the glass mat substrate without the coating. In example embodiments, penetration of the coating into the glass mat substrate preferably extends to a depth of from twenty five percent of a thickness of the coated glass mat to seventy five percent of the thickness of the coated glass mat. Moreover, a non-coated thickness of the coated glass mat is sufficiently thick for bonding purposes with, e.g., a gypsum slurry or other core materials such as thermoplastic or thermosetting plastics. The coating has a porosity in a range of from 1.3 CFM to 5.0 CFM, e.g., the coating comprises a coating blend which provides the coated glass mat with a porosity sufficient to allow water vapor to escape from a gypsum slurry when heated. The coating is preferably a coating blend comprised of water, latex binder, inorganic pigment, and inorganic binder.

A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.

Proposed is a showerhead-cooler system of a semiconductor-processing chamber with uniform distribution of plasma density. The showerhead has a plurality of through gas holes that are coaxial with respective channels of the gas-feeding cooler plate. On the gas inlet side, the though passages of the showerhead are provided with unequal conical nozzles characterized by a central angle that decreases from the peripheral part of the showerhead to the showerhead center. Such design provides uniformity of plasma density. Furthermore, in order to protect the walls of the nozzle and the walls of the gas holes from erosion that may be caused by the hollow-cathode phenomenon, these areas are coated with a thin protective coating that is resistant to electrical breakdown and chemical corrosion.

A luminaire with directional side-light extraction comprises a light pipe with a light-carrying core. The light pipe has light-extraction structure along a first longitudinal side of the luminaire, which is confined to a radial swath of the luminaire, along the longitudinal axis of the luminaire, of substantially less than 180°. For efficiency, the second end has light-saving structure for directing saved light from the second end towards the first end, at redirection angles other than an excluded range of redirection angles, so long as the photon content of light at so-called alpha redirection angles is at least 10 percent of the photon content of light at so-called beta redirection angles, where the excluded range of redirection angles is defined by:

|β_r↑<=20° and |α_r|<|β_r|/10,

where β_r is the beta redirection angle and α_r is the alpha redirection angle.

A backlight device for LCD displays is disclosed herein. The backlight device contains multiple LEDs as light source and a uniforming chamber positioned between the LEDs and the LCD panel. Lights emitted from the LEDs undergo multiple times of total reflection by the inner walls of the uniforming chamber to produce a highly uniform planar light, regardless of the length of their usage period, the differences of LEDs' hues and brightness, and whether some LEDs are failed. The backlight device does not require the diffusion plates and prism plates, which not only reduces cost but also avoids the luminous flux loss. Also, the backlight device could achieve the slimmest thickness without sacrificing cost, heat dissipation, and power consumption.

A light guide plate (12) has a light incidence surface (121) for receiving light, a light emitting surface (123) for emitting light, and a bottom surface (122). The bottom surface has a plurality of diffusion elements (124) arranged thereat. Each diffusion element defines a diffraction grating unit (125) therein. A grating direction of each diffraction grating unit is substantially perpendicular to a main direction of light beams received by the diffraction grating unit. Areas of the diffraction grating units progressively increase with increasing distance away from the light incidence surface. Diffractive capabilities of the diffraction grating units progressively increase with increasing distance away from the light incidence surface. These features improve the overall efficiency of utilization of light, and enable the light emitting surface to output highly uniform light.

A method is presented for effectively manufacturing multi-wall (double-wall, etc.) carbon nanotubes (CNTs) having a structure whereby interior tubes are formed within the CNTs. In this manufacturing method, fullerene/CNT hybrid structures are prepared, wherein assembled fullerenes, these being fullerenes that are linked, have been housed within single-wall CNTs. The interior tubes are formed from the assembled fullerenes by subjecting the hybrid structures to electron beam irradiation while in a heated state. It is preferred that irradiation with the electron beams occurs at a temperature of 100˜500° C. and with the electron beams having an accelerating voltage of 80˜250 kV. According to the manufacturing method of the present invention, multi-wall CNTs with few defects can be manufactured at lower temperatures and in a shorter period than in the case where the fullerene/CNT hybrid structures are only maintained under high temperature conditions (and electron beam irradiation is not performed).

The present invention discloses a cluster system load balancing method and a system thereof. The method comprises a step of obtaining the connection number of each server node and obtaining the processing utilization rate and memory occupation rate of each server node, a step of calculating the load rate of each server node according to the connection number, the processing utilization rate and the memory occupation rate, and a step of distributing a received task request to the server node with a lowest load rate. According to the method and the system, a degenerative feedback mechanism is used, the processing utilization rate and memory occupation rate parameters of the server node are introduced to represent the load condition of the server node, the load condition of the server node is truly and accurately reflected, the disadvantage that the server load condition can not be accurately reflected by an existing load balancing policy is effectively overcome, the overall throughput of a cluster system can be improved, and the overall efficiency and balance of the cluster system can be improved.

In sophisticated manufacturing techniques, the work function and thus the threshold voltage of transistor elements may be adjusted in an early manufacturing stage by providing a work function adjusting species within the high-k dielectric material with substantially the same spatial distribution in the gate dielectric materials of different thickness. After the incorporation of the work function adjusting species, the final thickness of the gate dielectric materials may be adjusted by selectively forming an additional dielectric layer so that the further patterning of the gate electrode structures may be accomplished with a high degree of compatibility to conventional manufacturing techniques. Consequently, extremely complicated processes for re-adjusting the threshold voltages of transistors having a different thickness gate dielectric material may be avoided.

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.