30results about How to "Low mass production" patented technology

A method for manufacturing surface acoustic wave elements and semiconductor devices, in which a template (3) with high-precision concavities and convexities manufactured in advance by photolithography technology using electron beams is pressed onto a substrate (1) coated with a resist film (2) ), transfer the resist pattern (5). Then, on the resist film pattern (5) formed by transfer printing, a metal thin film (6) is formed and peeled off together with the resist film (2) by a lift-off method.

The invention relates to gas sensor technology, in particular to a preparation method of a self-powered gas sensor based on single-walled carbon nanotubes. High-quality single-walled carbon nanotube films were prepared and collected by floating catalyst chemical vapor deposition, and directly transferred and loaded on a flexible transparent substrate. Prepare solar photovoltaic cells by mass junction, and then use electrode materials, such as copper, gold, silver, aluminum and other metals or carbon nanotubes, graphene, ITO and other non-metals, by magnetron sputtering, thermal evaporation, electroplating, silver glue, etc. In this way, the assembly of a self-powered gas sensor based on single-walled carbon nanotubes is completed. The invention realizes the preparation of a small, light, high-performance self-powered gas sensor, and can further integrate a flexible and bendable self-powered gas sensor through optimized design, breaking through the current metal oxide gas sensor in terms of flexibility, weight, energy consumption, Energy supply and other limitations.

The invention relates to a quantum dot composite scintillator material, and a preparation method thereof. The quantum dot composite scintillator material comprises an organic plastic matrix, and 1 to 5wt% of an organic high atomic number material, 5 to 15wt% of an organic luminophor, and 10 to 20wt% of a quantum dot luminescent material which are dispersed in the organic plastic matrix. Compared with the prior art, the quantum dot composite scintillator material possesses following advantages: doping of the organic high atomic number material is capable of improving blocking capacity on high energy photons; establishment of energy transferring between a matrix material and a quantum dot material is capable of achieving high scintillation efficiency of the quantum dot luminescent material under radiation excitation.

The invention discloses a light-emitting device with a sense of depth, which comprises a lampshade, a lamp housing, a decorative ring and LEDs. The LED is installed in the cavity of the outer lampshade and the lamp housing, the inner surface of the inner lampshade is provided with a light-splitting film, the outer surface of the decorative ring is a reflective surface, and the light-splitting film and the The reflective surfaces are arranged at relative intervals, the LED is located next to the bezel, the LED emits light toward the light splitting film, part of the light passes through the light splitting film and the inner lampshade, and part of the light is emitted by the light splitting film. The film reflects and shoots to the reflective surface, and the light splitting film and the reflective surface alternately reflect light as above. The present invention achieves a profound visual effect through alternate times of specular reflection between the light splitting film and the reflective surface. This application only needs at least one set of LEDs, which greatly saves the cost; and the LEDs are easy to mass-produce and the cost is low.

The invention relates to a LCD-making method, especially a LCD-making method of packaging and making liquid crystal material by using the double-layer structure where the liquid layer is covered with polymer film and which is formed in the course that the polymer monomer is separated with the liquid crystal in the polymerization reaction during the no liquid crystal injection course of a single-basal plate. According to the requirement for device structure, it further uses the techniques of coating, splashing, photoetching, etc to complete making the liquid crystal screen. Compared with traditional liquid crystal screen making techniques, it omits the courses of making an empty box and injecting liquid crystal into the empty box. It has obvious advantage in making plastic basal boards and large-sized LCD. It can also use plastic basal plate, thus making the made liquid crystal screen very thin, and further reducing the thickness and weight of the liquid crystal screen box.

A MEMS scanning mirror, including two piezoelectric ceramic blocks, two piezoelectric driving arms, two beams, two torsion beams and a reflector surface, there is a separation distance between the two piezoelectric ceramic blocks, and the two piezoelectric driving arms They are respectively arranged on two piezoelectric ceramic blocks, two beams are connected in parallel between two piezoelectric driving arms, two torsion beams and reflective mirrors are connected in series between the two beams, and the reflective mirrors are connected to two torsion Between the beams; the voltages applied to the two piezoelectric driving arms are opposite, so that the two piezoelectric driving arms bend in opposite directions, and the mirror surface is deflected; the voltages applied to the two piezoelectric ceramic blocks are opposite, so that the two piezoelectric The deformation of the ceramic block in the opposite direction to the direction perpendicular to the mirror surface drives the deflection of the mirror surface, and superimposes with the deflection angle of the mirror surface caused by the piezoelectric drive arm to amplify the deflection angle of the mirror surface. The scanning mirror can realize a large deflection angle, and has the advantages of small size, high reliability, simple structure and manufacturing process.

The present invention provides a high silicon cast iron superior in acid resistance, which not only possesses improved tensile strength compared to conventional high silicon cast iron, but also is inexpensive and mass producible, by improving the manufacturing process without adding any apparatus, and a manufacturing method thereof. This high silicon cast iron includes silicon(Si) 13.5-15.5 wt.%, carbon(C) 0.7-1.1 wt.%, manganese(Mn) 2.2 wt.% or less, at least one element between chromium(Cr) 1-5 wt.% and molybdenum(Mo) of 1-5 wt.%, and the balance iron(Fe) with unavoidable impurities. The manufacturing method comprises heating a molten metal of the above composition at a temperature of 1,650 DEG C. or higher to remove impurities, tapping it into a ladle in which a misch metal 0.1-0.4 wt.% against the weight of the molten metal is added, and casting the molten metal while controlling it to the lowest castable temperature, namely 1,270-1,350 DEG C..

The invention provides an anti-vibration assembling set, being characterized in that the single material of a metal plate is enough,only part of an anti-vibration elastic body is covered on part of the plate so as to save the size of the metal plate as much as possible and to reduce the usage amount of the elastic body,and the elastic body for antivibration, and anti-vibration mounting piece which can form thin wall integrally are arranged in the inner surface of the mounting hole of a clamping screw. The anti-vibration assembling set is an nti-vibration assembling set formed by a hard plate and is characterized in that the hard plate is provided with a central hole, and is formed by a high-post surface which is provided with mounting holes up and down and is propped to a mounting body, and a low-post surface which is provided with mounting holes left and right formed by jump, thus forming an inner surface of the left and right mounting holes, the low-post surface including the inner surface, and the adhered elastic body on the opposite back surface of the inner surface,and the anti-vibration assembly is propped to the other vibration part through the elastic body, and can be fixed through a fastening part inserted in the mounting hole.

The invention relates to the field of triode manufacturing, and particularly relates to a preparation method of a planar triode chip. According to the preparation method of the planar triode chip, the surface of a silicon wafer is cleaned, and then oxidation and photoetching processing is performed on the surface of the silicon wafer; boron diffusion, phosphorus diffusion and platinum diffusion are performed on the obtained silicon wafer so that a composite center is formed; metal impurities on the surface of the composite center are removed by a phosphorus diffusion impurity absorption technology; and steam aluminum, alloy, passivation, back thinning and back metallization processing is performed on the silicon wafer of which the metal impurities are removed so that the planar triode chip is obtained. A triode is prepared by the platinum diffusion technology so that production cost is greatly reduced, and the preparation method is suitable for batch production of the triode.