A kind of preparation method of planar triode chip
A triode, planar technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of limiting the application of triodes, voltage drop, soft breakdown, etc., to solve the voltage drop or soft breakdown characteristics, The effect of reducing production costs
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Embodiment 1
[0020] The surface of the silicon wafer is chemically cleaned, and the oxidized silicon wafer is subjected to photolithography once to carve out the boron base expansion area for boron diffusion. The base region of the transistor is formed after boron diffusion, followed by a second photolithography for phosphorous diffusion in the emitter region. The obtained silicon wafer is tested for sheet resistance and breakdown characteristic voltage, and after the test meets the standards, phosphorus diffusion and platinum diffusion are performed to form a recombination center. The specific process of platinum diffusion is to fill the diffusion furnace with nitrogen, control the loading time of platinum diffusion to be 1s, carry out platinum diffusion at a temperature of 850°C for 30min, unload and control the unloading time to 1s. The metal impurities produced by platinum diffusion are removed by phosphorus diffusion and gettering process. The specific process is to fill the diffusion...
Embodiment 2
[0022] The surface of the silicon wafer is cleaned, and the oxidized silicon wafer is subjected to photolithography once to carve out a boron base expansion area for boron diffusion. The base region of the transistor is formed after boron diffusion, followed by a second photolithography for phosphorous diffusion in the emitter region. The obtained silicon wafer is tested for resistance and breakdown characteristic voltage, and after the test meets the standards, phosphorus diffusion and platinum diffusion are performed to form a recombination center. The specific process of platinum diffusion is to fill the diffusion furnace with nitrogen, control the loading time of platinum diffusion for 5 seconds, carry out platinum diffusion at 870° C. for 25 minutes, unload and control the unloading time for 5 seconds. The metal impurities produced by platinum diffusion are removed by phosphorus diffusion and gettering process. The specific process is to fill the diffusion furnace with ph...
Embodiment 3
[0024] The surface of the silicon wafer is chemically cleaned, and the oxidized silicon wafer is subjected to photolithography once to carve out the boron base expansion area for boron diffusion. The base region of the transistor is formed after boron diffusion, followed by a second photolithography for phosphorous diffusion in the emitter region. The obtained silicon wafer is tested for sheet resistance and breakdown characteristic voltage, and after the test meets the standards, phosphorus diffusion and platinum diffusion are performed to form a recombination center. The specific process of platinum diffusion is to fill the diffusion furnace with nitrogen, control the loading time of platinum diffusion for 10 s, conduct platinum diffusion at 900° C. for 20 min, unload and control the unloading time for 10 s. Metal impurities generated by platinum diffusion are removed by phosphorus diffusion gettering process. The specific process is to fill the diffusion furnace with phosp...
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