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38results about How to "Increase working current density" patented technology
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Semi-solid flow cell
ActiveCN103247816AIncrease working current densityGood rate characteristicsFinal product manufactureRegenerative fuel cellsElectrochemical responseElectrical battery
Owner:南京竞予能源有限公司
Bipolar membrane and preparation method thereof
InactiveCN101899675AGood chemical stabilityImprove thermal stabilityDiaphragmsHydrogenInterface layer
The invention discloses a bipolar membrane and a preparation method thereof. In the invention, metal phthalocyanine derivants are adhered to at least one monopolar membrane in the bipolar membrane to form the bipolar membrane of an intermediate interface layer formed by the metal phthalocyanine derivants. The bipolar membrane prepared by the method has the advantages of acid resistance and alkali resistance, high hydrolysis efficiency, high hydrogen and hydroxyl ion permeability, high working current density, small membrane impedance, low working voltage, simple overall bipolar membrane preparation process and the like.
Owner:FUJIAN NORMAL UNIV
Double-function negative electrode and applications of double-function negative electrode as all-vanadium flow battery negative electrode
ActiveCN104518221AReduces electrochemical polarizationIncrease working current densityMaterial nanotechnologyCell electrodesFormateCharge transfer resistance
The invention relates to an all-vanadium flow battery double-function negative electrode, wherein a carbon material is adopted as a substrate, a Bi-containing electro-catalyst is modified on the surface of the substrate, the Bi-containing electro-catalyst is one or more than two selected from a Bi elementary substance, Bi2O3, a Bi halide and a Bi metal salt, the Bi halide is bismuth fluoride, bismuth trichloride, bismuth bromide, or bismuth iodide, and the Bi metal salt is bismuth sulfate, bismuth nitrate, bismuth phosphate, bismuth formate or bismuth acetate. According to the present invention, the electrode is suitable for the negative electrode of the all-vanadium flow battery, the electrocatalysis activity and the electrochemical reversibility of the electrode material on the V<2+> / V<3+> oxidation reduction reaction can be substantially improved, and the charge transfer resistance can be reduced; and the high hydrogen evolution overpotential is provided so as to inhibit the occurrence of the hydrogen evolution reaction and prolong the service life of the battery.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Gradient electrode for flow batteries and application thereof
The invention relates to a gradient electrode for flow batteries. The gradient electrode is formed by: stacking at least two layers of graphite fiber or carbon fiber felt with different bulk densities in an order from low bulk density to high bulk density, and making the materials into a whole by longitudinal needling perpendicular to an electrode surface. The electrode can effectively reduce the resistance of the electrode body, and lower the flow resistance of an electrolyte solution and provide more reaction sites, thus finally reducing ohmic polarization, electrochemical polarization and concentration polarization of flow batteries. The gradient electrode provided by the invention improves the energy efficiency and voltage efficiency of flow batteries so as to improve the working current density, thus greatly reducing the weight, volume and cost of batteries with similar output power.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Flow energy storage battery structure
InactiveCN102867978AEasy to buildReduce contact resistanceRegenerative fuel cellsFuel cell detailsPorosityElectrical battery
The invention relates to a flow energy storage battery structure, characterized in that an infill panel is arranged between a bipolar plate and a porous electrode in an electrode frame, the infill panel is made from carbon materials with good electrical conductivity and low porosity or metal materials which are stable in acidic mediums, reduces the body resistances of the electrodes and electrolyte and contact resistance between the electrode bipolar plates to finally reduce the ohmic resistance of the flow energy storage battery. According to the invention, the energy efficiency and voltage efficiency of the flow energy storage battery are raised, so that the working current density is raised, and the weight, volume and cost of the battery with same output power are greatly reduced.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI +1
Difunctional negative electrode and its application as all-vanadium redox energy storage battery negative electrode
ActiveCN104218248AExtend working lifeIncrease the hydrogen evolution overpotentialCell electrodesFuel cellsCharge transfer resistanceOverpotential
A difunctional negative electrode for an all-vanadium redox energy storage battery negative electrode includes a carbon matrix material and a Bi-containing electro-catalyst modifying the surface of the carbon matrix material. The negative electrode is suitable for being used as the negative electrode of the all-vanadium redox energy storage battery, can greatly improve the electrocatalytic activity and electrochemical reversibility of an electrode material on a V<2+> / V<3+> redox reaction, and decreases the charge transfer resistance; and the negative electrode has high hydrogen evolution overpotential, can inhibit a hydrogen evolution reaction, and prolongs the work life of the battery. The difunctional negative electrode improves the voltage efficiency and energy efficiency of the all-vanadium redox energy storage battery, so the working current density of the battery is improved, and the weight, the size and the cost of the battery with same output power are greatly reduced.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Metal oxide anode assembly for cathode protection of ship
This invention relates to a shipping cathode protective metal oxide anode assembly, which is composed of anode, conducting bar, insulating bracket and fixing frame, the anode uses titanium as base, which assumes disc shape, the working surface is coated with ceramic compound metal oxide conducting coat, the opposite side is welded with conducting pole with solid titanium bar or copper core compound titanium bar, the anode bracket uses glass fiber to reinforce epoxy resin compound material and shape by thermoforming, the anode is pressed tightly by fixing frame and fixed by bolt, and the fixing frame is made by using corrosion-resistance polymer material. The ship with assistant anode assembly is fit for installing at the part whose curvature half-diameter is shorter, which has well electrochemical capability, not easy to damage, and can work long; and it has long life and well stability.
Owner:725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
Base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode manufactured on 4H type single crystal silicon carbide epitaxial layer and process
ActiveCN104201211AShort reverse recovery timeSuppress surge currentSemiconductor/solid-state device manufacturingSemiconductor devicesReverse recoveryCarbide
The invention discloses a base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode manufactured on a 4H type single crystal silicon carbide epitaxial layer and a process. An anode / (P<+>)4H-nc-SiC / (N) slowly changes into a 6H-nc-SiC / (N)4H-c-SiC / (N<+>)4H-c-SiC / cathode. The base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode comprises an N<+> type 4H-c-SiC substrate, an N type 4H-c-SiC epitaxial layer, an N type 6H-nc-SiC gradually-doped and grain-gradient multilayer film and a P<+> type 4H-c-SiC single layer film, wherein the outer sides of the N<+> type 4H-c-SiC substrate and the P<+> type 4H-c-SiC single layer film are in ohm connection with an anode NiAu and an anode TiAu respectively. The device structure is made by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) technology. The process has the advantages of shortening the reverse recovery time, inhibiting surge current and lowering the process temperature.
Owner:广州奔瑞电子科技有限公司
Silicon carbide trench type MOSFETs integrated with SBD and preparation method thereof
ActiveCN108962977AImprove mobilityReduce dopingSemiconductor/solid-state device manufacturingSemiconductor devicesGate dielectricElectron flow
The invention provides a silicon carbide trench type MOSFETs integrated with an SBD and a preparation method thereof. A side wall gate electrode contact of the MOSFETs is located on the side wall of amain trench, a source electrode metal contact is formed at the bottom of the trench, and a Schottky metal contact is integrated. When a first quadrant is conducted forward, electrons flow from bottomto top through an inversion layer of the side wall of the trench, and a reverse conduction channel different from a conventional trench MOSFETs is formed. When a third quadrant is conducted forward,a Schottky diode is conducted at first, effectively inhibiting conduction of an in-vivo parasitic PN diode. During reverse blocking, a p-type shield layer at the bottom of the trench effectively shields a high electric field in a device body region, so that a device gate dielectric electric field and a Schottky contact electric field are greatly reduced, and an avalanche occurs at a PN junction ofthe device body region. The silicon carbide trench type MOSFETs integrated with an SBD has a low total chip area, satisfies good first and third quadrant conduction characteristics and reverse blocking abilities, and enables the static and dynamic reliability of a device to be improved.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Ceramic metal oxide composite anode for cathodic protection
The invention relates ceramal oxidate composite anode used for cathodic protection, comprising base body, intermediate layer and surface layer. The base body adopts metallic titanium or niobium; intermediate layer adopts ceramal oxidate IrO2-Ta2O5 in which the proportion of Ir and Ta is (50-90):(10-50); the surface layer is RuO2-IrO2-TiO2 in which the proportion of Ru,Ir and Ti is (15-25):(5-15):(60-70). The composite anode possesses not only the good electrochemistry activity, but also the high stability and low consumption rate. The method suits for impressed current cathodic protection system and other electrochemistry industry.
Owner:SUNRUI MARINE ENVIRONMENT ENG
Planar gate IGBT device with deep trench electric field shielding structure
ActiveCN109728084AImprove safe work areaIncrease concentrationSemiconductor devicesCharge carrierEngineering
The invention relates to the field of power semiconductors, and provides a planar gate IGBT device with a deep trench electric field shielding structure, which is used for overcoming the problems thata current groove-gate IGBT gate with a carrier storage layer is too large in drive charges and small in short-circuit safety working region and is limited in the concentration of the CSL layer. The deep groove used for manufacturing the groove-gate IGBT channel traditionally and a P-type buried layer at the bottom portion of the groove are combined to form an electric field shielding structure toachieve clamping of the potential of the carrier storage layer; one IGBT cell is internally provided with a plurality of deep grooves to improve the concentration of the carrier storage layer of theIGBT compared to a traditional IGBT, have the higher cathode injection efficiency, and obtain the better trade-off relation of the on-state voltage and the turn-off loss. A planar gate and an electricfield shielding structure are employed, the IGBT has lower gate drive power consumption and lower saturation current density so as to improve the safety working region of the IGBT.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
A kind of bipolar membrane and preparation method thereof
InactiveCN101899675BCatalytic for water dissociationHas acid and alkali resistanceDiaphragmsPower flowPhthalocyanine derivatives
The invention discloses a bipolar membrane and its preparation method. In the invention, metal phthalocyanine derivatives are attached to at least one monopolar membrane in the bipolar membrane to form a bipolar membrane with an intermediate interface layer composed of metal phthalocyanine derivatives. polar membrane. The bipolar membrane prepared by this method has acid and alkali resistance, high water dissociation efficiency, high hydrogen ion and hydroxide ion permeability, high working current density, low membrane impedance, low working voltage, and the overall preparation process of the bipolar membrane is simple. Etc.
Owner:FUJIAN NORMAL UNIV
Combined electrode for flow battery and flow energy storage battery
ActiveCN103633330AGood conductive networkReduce contact resistanceCell electrodesRegenerative fuel cellsTotal thicknessOhm
The invention relates to a combined electrode for a flow energy storage battery and a flow energy storage battery containing the combined electrode. The combined electrode comprises a conducting layer and a catalyst layer which are superimposed mutually. The thickness of the conducting layer is 10-90% of the total thickness of the electrode. The conducting layer is made of carbon materials with good conductivity and low porosity. The catalyst layer is made of carbon materials with high electrocatalytic activity and high porosity. The self resistance of the electrode and the contact resistance between bipolar plates of the electrode are decreased, and finally the Ohm internal resistance of the flow energy storage battery is decreased. The energy efficiency and the voltage efficiency of the flow energy storage battery are raised, and therefore the working current density is raised, thus, the weight, the volume and the cost of the battery with the same output power are all decreased greatly.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Preparation method of bipolar membrane
ActiveCN103396574ALow membrane resistanceLower impedanceSemi-permeable membranesPower flowIon permeability
The invention discloses a preparation method of a bipolar membrane. The preparation method of the bipolar membrane is characterized by comprising the following steps of: (1), preparing a PAMPSLi membrane solution; (2), preparing a PAMPSLi-SA membrane; and (3), preparing a PAMPSLi-SA / mCS bipolar membrane. The preparation method of the bipolar membrane disclosed by the invention is simple and convenient to operate. The bipolar membrane which is obtained by the preparation method disclosed by the invention has the characteristics of being small in membrane impedance, low in working voltage, large in working current density, high in hydrolytic dissociation efficiency, high in ion permeability and the like.
Owner:CHONGQING TAIKE ENVIRONMENTAL PROTECTION TECH CO LTD
A gradient electrode for a flow battery and its application
ActiveCN106558704BLongitudinal resistance is smallImprove liquidityCell electrodesFiberElectrical resistance and conductance
A gradient electrode for a liquid flow battery The gradient electrode is composed of at least two layers of graphite fibers or carbon fiber mats with different bulk densities stacked in order from low to high bulk densities, and is integrated by longitudinal needle punching perpendicular to the electrode surface. This kind of electrode can effectively reduce the resistance of the electrode body, reduce the flow resistance of the electrolyte and provide more reaction places, and finally reduce the ohmic polarization, electrochemical polarization and concentration polarization of the flow battery. The invention improves the energy efficiency and voltage efficiency of the liquid flow battery, thereby increasing its working current density, so that the weight, volume and cost of the battery with the same output power are greatly reduced.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
High-bandwidth GaN-based LED light-emitting device with vertical conductive structure and preparation method thereof
InactiveCN110190083AReduce contact areaShort lifeSolid-state devicesSemiconductor devicesModulation bandwidthCapacitance
The invention discloses a high-bandwidth GaN-based LED light-emitting device with a vertical conductive structure and a preparation method. The light-emitting device is a microarray formed by seriallyconnecting LEDs on an insulating substrate end to end through N-type electrodes and P-type electrodes. Each LED comprises an N-type electrode, a conductive substrate, an LED epitaxial structure and aP-type electrode. The insulating substrate, the N-type electrodes, the conductive substrates, the LED epitaxial structures and the P-type electrodes are sequentially arranged from bottom to top. According to the invention, the micron-sized LEDs are designed to form an array, so that the junction capacitance of the LEDs is reduced, the working current density is increased, and the modulation bandwidth of the LEDs is improved. The current crowding effect of the LEDs is reduced by using the vertical conductive structure, the influence of the heat effect on the bandwidth is reduced, and the modulation bandwidth is further improved.
Owner:SOUTH CHINA NORMAL UNIVERSITY
Organic light emitting diode device and preparation method thereof, display substrate and display device
PendingCN111799385AReduce brightnessIncrease working current densitySolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceHost material
The application provides an organic light emitting diode device and a preparation method thereof, a display substrate and a display device. The organic light-emitting diode device comprises a substrate, an anode layer, an organic functional layer and a cathode layer, and the anode layer, the organic functional layer and the cathode layer are stacked on one side of the substrate; the organic functional layer comprises a first functional layer, a second functional layer and a light-emitting layer which are stacked, and the first functional layer is arranged close to the anode layer; the HOMO energy level of the second functional layer is deeper than the HOMO energy levels of the first functional layer and a light-emitting layer host material. According to the technical scheme, the second functional layer material with the relatively deep HOMO energy level is arranged; a hole blocking barrier is formed at the interface of the first functional layer 11 and the second functional layer 12 and thus the light-emitting efficiency of the organic light-emitting diode device under extremely low current is extremely low, so that the picture quality of an OLED under extremely low gray scale andlow brightness can be improved, the influence of leakage current on the picture quality can be reduced, and the problem of crosstalk between pixels is solved.
Owner:BOE TECH GRP CO LTD +1
Zinc-iodine flow battery
Disclosed is a zinc-iodine flow battery. A positive electrolyte and a negative electrolyte are the same and are both a mixed aqueous solution of an iodized salt and a zinc salt; and a diaphragm is a porous diaphragm without an ion exchange group. The positive and negative electrolytes are both neutral, so that the corrosion problem of a traditional liquid flow battery strong acid and strong alkalielectrolyte is solved, the energy density of the battery is high, the current density is high, the cycle life is long, and the cost is low.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
A dual-functional negative electrode and its application as negative electrode for all-vanadium redox flow battery
ActiveCN104518221BReduces electrochemical polarizationIncrease working current densityMaterial nanotechnologyCell electrodesFormateCharge transfer resistance
A dual-functional negative electrode for an all-vanadium redox flow battery, the dual-functional negative electrode is based on a carbon material, and its surface is modified with a Bi-containing electrocatalyst, and the Bi-containing electrocatalyst is Bi simple substance, Bi2O3, Bi halide or Bi One or more than two kinds of metal salts; Bi halides are bismuth fluoride, bismuth chloride, bismuth bromide or bismuth iodide; Bi metal salts are bismuth sulfate, bismuth nitrate, bismuth phosphate, bismuth formate or bismuth acetate . This electrode is suitable for the negative electrode of the all-vanadium redox flow battery, which can greatly improve the electrocatalytic activity and electrochemical reversibility of the electrode material for the V2+ / V3+ redox reaction, reduce the charge transfer resistance; it also has a high hydrogen evolution overpotential, It can inhibit the occurrence of hydrogen evolution reaction and prolong the working life of the battery.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Porous carbon fiber paper electrode material for vanadium redox flow battery and its preparation and application
ActiveCN106560944BLarge specific surface areaImprove efficiencyFuel cellsFiberVanadium redox battery
A kind of porous carbon fiber paper electrode material for vanadium redox flow battery, the thickness of porous carbon fiber paper electrode is 50-1000 μ m, it is made up of the carbon fiber that diameter is 5-20 μ m, the porosity of porous carbon fiber paper is 60-90%; Porous structure, the specific surface area of carbon fiber is 5‑50m 2 / g, the pore size is 50-2000nm. The prepared porous carbon fiber paper has a significantly increased specific surface area and oxygen-containing functional groups, which can significantly improve the electrocatalytic activity of the carbon fiber material for the redox reaction of vanadium ions. This electrode material is suitable for all-vanadium redox flow batteries, which can reduce the distance between the electrodes of the battery, reduce the internal resistance of the battery, and reduce the charge transfer resistance, improve the voltage efficiency and energy efficiency of the all-vanadium redox flow battery, thereby increasing its working current density, making The weight, volume and cost of batteries with the same output power are greatly reduced.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Treatment device and method for organic high-concentration wastewater
InactiveCN108911047APrevent surface foulingReasonable designWater contaminantsWater/sewage treatment by electrochemical methodsElectricityElectrochemical response
The invention discloses a treatment device and method for organic high-concentration wastewater. The treatment device for the organic high-concentration wastewater comprises a machine body, a dreg scraping machine and a plurality of groups of electrochemical water treatment units, wherein the machine body is internally provided with a mud storage chamber, an electrochemical reaction chamber and awater inlet chamber; the water inlet chamber is arranged at the left lower part of the electrochemical reaction chamber; the water inlet chamber is communicated with the electrochemical reaction chamber; a water inlet is formed in the water inlet chamber; the plurality of groups of electrochemical water treatment units are arranged at the bottom of the electrochemical reaction chamber; the dreg scraping machine is mounted at the top in the machine body; the mud storage chamber is arranged at the left upper part of the machine body; the mud storage chamber is arranged at one side of the dreg scraping machine; a mud discharging opening is formed in the bottom of the mud storage chamber; a water outlet is formed in the bottom of the right end of the machine body. The treatment device disclosed by the invention is reasonable in design, scaling and blocking conditions on the surface of an electrode can be avoided, the treatment efficiency is higher and the treatment energy consumption is lower.
Owner:方达 +1
A zinc-iodine flow battery
ActiveCN109755620BIncrease energy densityLow costRegenerative fuel cellsElectrolytic agentHigh energy
The invention relates to a zinc-iodine liquid flow battery. The positive electrode electrolyte and the negative electrode electrolyte are the same, both being a mixed aqueous solution of iodine salt and zinc salt, and the separator is a porous membrane without ion-exchange groups. Both positive and negative electrolyte solutions are neutral, which overcomes the corrosion problem of strong acid and strong alkali electrolytes in traditional flow batteries. The battery has high energy density, high current density, long cycle life, and low cost.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Shielded gate trench power device and manufacturing method thereof
ActiveCN106298941BHigh dielectric constantLower threshold voltageSemiconductor/solid-state device manufacturingSemiconductor devicesPower flowGate dielectric
The invention discloses a shield gate trench power device. A bottom dielectric layer and an inter-polysilicon isolation dielectric layer are formed in a deep trench of a gate structure, a region encircled by the inter-polysilicon isolation dielectric layer forms a source trench, a gate trench is formed in a region, on which self-alignment etching is performed, of the bottom dielectric layer arranged at a top of the deep trench, a gate dielectric layer is formed on a side surface of a top, corresponding to the deep trench, of the gate trench, a polysilicon gate is formed in the gate trench, source polysilicon is formed in the source trench, and the polysilicon gate and polysilicon of the source polysilicon are simultaneously formed. The invention also discloses a fabrication method of the shield gate trench power device. By the fabrication method of the shield gate trench power device, the threshold voltage of the device can be reduced, and meanwhile, the gate-source electric leakage of the device can be reduced; the process flow can be substantially simplified, so that the process cost is reduced; and the frequency characteristic can be improved, and the shield gate trench power device has relatively large working current density.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
A Reverse Conduction Insulated Gate Bipolar Transistor
ActiveCN104241349BIncrease the doping concentrationIncrease working current densitySemiconductor devicesValence bandPower flow
A reverse conduction insulated gate bipolar transistor, comprising a collector, a P-type collector region (02), an N-type tunnel doped region (03), an N-type blocking layer (04), an N-type drift region (05), a MOS region and a gate. The P-type collector region (02) is a degenerate doped region, where the Fermi level enters the valence band; the N-type tunnel doped region (03) is a region where the doping concentration is close to degenerate doping, and the Fermi level is close to the bottom of the conduction band but does not enter the conduction band; the doping concentration of the P-type collector region (02) is higher than the doping concentration of the N-type tunnel doped region (03). The transistor realizes reverse conduction by introducing the N-type tunnel doped region (03); thus a back surface does not need an etching process during manufacture. During operation, since the N-type region at the collector end of an ordinary reverse conduction IGBT is not present, the problem of current concentration which arises during forward conduction and reverse conduction of a device is non-existent; the phenomenon of voltage rebound during forward conduction of a device is also non-existent.
Owner:PEKING UNIV SHENZHEN GRADUATE SCHOOL
A semi-solid flow battery
ActiveCN103247816BIncrease working current densityGood rate characteristicsFinal product manufactureRegenerative fuel cellsElectrochemical responseFlow cell
The invention discloses a semi-solid flow cell which is provided with a cell stack formed by parallel connection of one individual cell or multiple individual cells, wherein at least one of a positive pole electrolyte and a negative pole electrolyte comprises solid electrode particles to form an electrode suspension liquid; the surfaces of the solid electrode particles have catalytic activity; and active substances dissolved in the electrolytes can have an electrochemical oxidation or reduction reaction on the surfaces of the particles. Because the solid electrode particles can enlarge electrochemical oxidation area of the active substances in the electrolytes but not participate in the electrochemical oxidation, a current collector of the semi-solid flow cell does not need to have catalytic activity, so that the manufacturing cost is greatly reduced; and meanwhile, the solid electrode particles have good conductivity for collecting current generated in the electrochemical reaction, so as to form a conductive network. According to the invention, the work current density of the cell can be increased, the multiplying power performance of the cell can be improved, the size of a cell module is reduced, and the manufacturing cost of the cell can be lowered.
Owner:南京竞予能源有限公司
Preparation method of bipolar membrane
ActiveCN103396574BLow membrane resistanceLower impedanceSemi-permeable membranesPower flowIon permeability
Owner:CHONGQING TAIKE ENVIRONMENTAL PROTECTION TECH CO LTD
Flow energy storage battery structure
InactiveCN102867978BEasy to buildReduce contact resistanceRegenerative fuel cellsFuel cell detailsPorosityInternal resistance
The invention relates to a flow energy storage battery structure, characterized in that an infill panel is arranged between a bipolar plate and a porous electrode in an electrode frame, the infill panel is made from carbon materials with good electrical conductivity and low porosity or metal materials which are stable in acidic mediums, reduces the body resistances of the electrodes and electrolyte and contact resistance between the electrode bipolar plates to finally reduce the ohmic resistance of the flow energy storage battery. According to the invention, the energy efficiency and voltage efficiency of the flow energy storage battery are raised, so that the working current density is raised, and the weight, volume and cost of the battery with same output power are greatly reduced.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI +1
Hydrogen oxygen hydrocarbon mixed gas generator
InactiveCN100408728CExtended service lifeImprove work efficiencyElectrolysis componentsElectrolysisHydrocarbon mixtures
The invention relates to an oxy hydrogen hydrocarbon mixture gas generator that is made up of electro-bath and evaporator. The electro-bath includes electrolyzing jar, conductive fluid pumping compounding pipe, filter, and circulating pump. The electrolyzing jar adopts multilayer concentric barrel covering structure, remains side wall clearance and setting through hole on the wall of middle barrel and inner barrel. The evaporator is made up of condenser tube, vent-pipe, condensing water buffer, and automatic heat compensation device. The oxy hydrogen gas generated from electrolyzing jar is sent to evaporator to bubble and gasify and fully modify. The dry gas would be output to backfire-block machine for using for user. The invention decreases plate corruption, increases the use life of device and work efficiency. It also conquers the disadvantage of spraying liquid from muzzle.
Owner:ZHEJIANG HELI HYDROGEN ENERGY TECH CO LTD
A kind of integrated SBD silicon carbide trench mosfets and its preparation method
ActiveCN108962977BImprove mobilityReduce dopingSemiconductor/solid-state device manufacturingSemiconductor devicesGate dielectricTrench mosfet
The invention provides a silicon carbide trench MOSFETs integrated with SBDs and a preparation method thereof. The side wall gate electrode contact of the MOSFETs is located on the side wall of the main trench, and the source electrode metal contact is formed at the bottom of the trench, and a Schottky metal contact is integrated. When the first quadrant is forward-conducting, electrons flow through the side of the trench from bottom to top The wall inversion layer forms a reverse conduction channel different from traditional trench MOSFETs; when the third quadrant is forward conduction, the Schottky diode is first to conduct, effectively suppressing the conduction of parasitic PN diodes in the body; reverse blocking When , the p-type shielding layer at the bottom of the trench effectively shields the high electric field of the device body region, so that the electric field of the device gate dielectric and the Schottky contact electric field are greatly reduced, and the avalanche occurs at the PN junction of the device body region. The silicon carbide trench MOSFETs integrated with SBDs have a lower total chip area, while satisfying good first and third quadrant conduction characteristics and reverse blocking capabilities, and the static and dynamic operating reliability of the device are improved. .
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
A kind of preparation method of highly active electrode material for vanadium redox flow battery
ActiveCN104716349BLarge specific surface areaImprove efficiencyCell electrodesFuel cellsFiberCarbon fibers
The invention relates to a preparation method of a highly active electrode material for an all-vanadium redox flow battery, which is prepared by heat-treating a pre-oxygen felt at a high temperature of 1000-1600° C. in an atmosphere containing CO2 through temperature programming. The prepared activated carbon felt has significantly improved specific surface area and hydrophilicity, and can significantly improve the electrocatalytic activity of the carbon fiber material for the redox reaction of vanadium ions. This electrode material is suitable for all-vanadium redox flow batteries, which can reduce the charge transfer resistance, improve the voltage efficiency and energy efficiency of all-vanadium redox flow batteries, thereby increasing its working current density, making the weight, volume and cost of batteries with the same output power are greatly reduced.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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