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82results about How to "Improve welding tension" patented technology

Positive electrode silver paste for back passivation silicon solar cell and preparation method thereof

The invention discloses positive electrode silver paste for a back passivation silicon solar cell and a preparation method thereof. The positive electrode silver paste comprises, in mass percent, 3%-15% of organic carriers, 80%-95% of silver powders and 1%-5% of inorganic glass materials. The inorganic glass materials are prepared by compounding Pb-V-Te glass and Bi-W-Si glass; and the silver powders are prepared by compounding first silver powders and second silver powders. Through introduction of nanometer silver powders, sintering activity of a silver powder system is improved, and compactness of silver grid lines under low-temperature sintering is improved; by adjusting softening temperature, viscosity and surface tension of the glass materials, liquidity and wetting ability of glass liquid are improved, etching capacity of the glass liquid to a front-surface antireflection layer is ensured and silver powder fusion and reprecipitation capability is improved; precipitation of silver nanometer colloid particles on the surface of a silicon wafer helps to promote the glass layer to form good ohmic contact with the silicon wafer, and thus conversion efficiency is improved; and through introduction of the second component glass powders, bonding strength between the glass layer and a silicon substrate is enhanced.
Owner:GUANGDONG AIKO SOLAR ENERGY TECH CO LTD

Laser path of laser welding point, and laser welding method

ActiveCN108356414AStrong pullControllable stacking timesLaser beam welding apparatusShielding gasLaser scanning
The invention discloses a laser path of a laser welding point, and a laser welding method. The laser welding method comprises the steps of fixing a product to be welded onto a two-dimensional platformthrough a fixture, utilizing a pulse laser for scanning welding a welding point in a welding area of the product to be welded, and dividing a laser scanned path graph of the welding point into threesegments, wherein the first segment is a straight-line segment or a curved segment, the second segment is formed by multiple reciprocating disjoint straight-line segments or curved segments, startingpoints of each two adjacent straight-line segments or curved segments are connected through a transition segment, the third segment is a straight-line segment or a curved segment, and the first segment, the second segment and the third segment are sequentially connected; and crossing the straight-line segments or the curved segments of the first segment and the second segment, crossing the straight-line segments or the curved segments of the third segment and the second segment, and during a laser scanning welding process, blowing a protection gas to the welding point. According to a speciallyedited point-shaped welding graph, a thin slice is welded through a single-pulse superposition track manner, multiple small molten pools are formed in the thin slice material, and the welding point with a large tensile force is obtained.
Owner:WUHAN LINGYUN PHOTOELECTRONICS SYST

Monocrystalline silicon wafer with pyramid superposition structure and preparation method

The invention relates to the field of solar cells and discloses a monocrystalline silicon wafer with a pyramid superposition structure and a preparation method. After an original silicon wafer is cleaned through a solution a, anisotropic corrosion is carried out through a solution b to obtain a large pyramid textured surface, and then, secondary texturing is carried out through a solution c, so that a small pyramid textured surface with a smaller size is formed on the original large pyramid textured surface, small pyramids are sequentially stacked on the surface of the large pyramid from top to bottom to form pyramid units; since the pyramid units cover the surface of the silicon wafer and are superposed, the monocrystalline silicon wafer not only has the advantages of good contact betweenthe large pyramid and the conductive grid line and high welding tension, but also has the advantages of low reflectivity of the small pyramid and high short-circuit current. The textured surface of the monocrystalline silicon wafer is of a pyramid superposition structure with different sizes, so that the monocrystalline silicon wafer not only has the advantages of good contact between the large pyramid and the conductive grid line and high welding tension, but also has the advantages of low reflectivity of the small pyramid and high short-circuit current.
Owner:ZHONGWEI NEW ENERGY CHENGDU CO LTD

Photovoltaic module and manufacturing method thereof

The invention discloses a photovoltaic module and a manufacturing method thereof, and the method comprises the following steps: placing a plurality of interconnection structural members on the surface of one side of a battery piece, enabling one end, corresponding to a first bonding pad, of each interconnection structural member to extend to one side, which exceeds the edge, adjacent to the battery piece, of the first bonding pad, a plurality of bonding pads are arranged between each interconnection structural member and the battery piece, and the bonding pad closest to the edge of one side of the battery piece in the plurality of bonding pads is a first bonding pad; judging whether the actual length L1 of each interconnection structural member is equal to the theoretical length L of the interconnection structural member or not; if L1 is equal to L, keeping the position of the corresponding interconnection structural member unchanged; if L1 is less than L, moving the corresponding interconnection structural member towards the direction of the edge of the battery piece; and if L1 is greater than L, moving the corresponding interconnection structural member towards the direction far away from the edge of the battery piece. According to the manufacturing method of the photovoltaic module provided by the invention, the deviation correction of the interconnected structural member can be realized, and the reliability of the photovoltaic module is improved.
Owner:CSI CELLS CO LTD +1

Glass material for high-sheet-resistance shallow crystallized silicon solar cell as well as preparation method and slurry thereof

The invention discloses a glass material for a high-sheet-resistance shallow crystallized silicon solar cell. The glass material is prepared from the following raw materials: 10 weight percent to 30 weight percent of SeO2, 5 weight percent to 10 weight percent of PbO, 10 weight percent to 20 weight percent of WO3, 10 weight percent to 20 weight percent of SiO2, 10 weight percent to 20 weight percent of ZnO, 0 weight percent to 10 weight percent of alkaline earth metal oxide RO and 0 weight percent to 10 weight percent to alkaline earth metal oxide R2O. The invention further discloses a preparation method of the glass material, slurry prepared from the glass material and a preparation method of the slurry. The glass material disclosed by the invention is a Se-Pb-Si-W-Zn oxide system; the glass system has low glass transition temperature and softening temperature and has a relatively good wetting property on silver and silicon; the glass system is applied to a high-sheet-resistance shallow crystallized silicon wafer so that contact resistance is easy to improve; the glass material also has a very good wetting capability on silver powder and can be firmly combined with the silicon wafer, so that the welding pulling force of a silver electrode is improved.
Owner:CHANGZHOU JUHE NEW MATERIAL CO LTD

High-welding-tension main grid low-temperature silver paste for solar heterojunction battery and preparation method of high-welding-tension main grid low-temperature silver paste

The invention provides high-welding-tension main grid low-temperature silver paste for a solar heterojunction battery and a preparation method of the high-welding-tension main grid low-temperature silver paste, which aim to overcome the related technical defects that the main grid silver paste in the field is relatively low in welding tension, relatively poor in weldability, relatively high in volume resistivity or relatively poor in printability after being cured, and almost zero in aging tension under certain conditions at present. The silver paste comprises low-melting-point flake silver powder, high-sintering-activity spherical silver powder, low-melting-point alloy powder, an organic bonding phase, an inorganic bonding phase, an organic solvent and a leveling agent, and is prepared through premixing, temperature control, stirring and grinding, so that the low-temperature silver paste which is high in basic welding tension, good in aging tension, high in weldability after being cured and is especially suitable for preparing the main gate electrode of the heterojunction battery is obtained, and the welding reliability of the heterojunction battery assembly is greatly improved.
Owner:四川东树新材料有限公司

Front silver paste for crystalline silicon solar cell and preparation method and application thereof

The invention discloses front silver paste for a crystalline silicon solar cell, and a preparation method and application thereof. The front silver paste for crystalline silicon solar cell includes anorganic carrier, an organic auxiliary agent, glass powder and silver powder, wherein the raw material of the glass powder comprises TeO2, an adhesion additive, Bi2O3, MgO, Ag2O and ZnO, and optionally includes one or more of Al2O3, ZrO2, R2O, PtO2 and MoO; the adhesion additive is one or more selected from oxides of Si, P, B or Ge; and R2O is one or more selected from oxides or salts of Li, Na orK. The preparation method of the front silver paste for a crystalline silicon solar cell includes the steps: weighing each component according to the formula, mixing the components, grinding the mixture until the particle size of the paste is less than 5 mu m, and controlling the viscosity of the paste, thus completing preparation. The invention also relates to an application for preparation of the passivation crystalline silicon solar cell. The front silver paste for a crystalline silicon solar cell can realize high welding adhesion between a front silver electrode and a welding strip whilemaximizing the electrical performance of the solar cell, and the cell pack has a long service life.
Owner:苏州博望新能源科技有限公司

Method for manufacturing electrode of HIT solar cell

The invention discloses a method for manufacturing an electrode of an HIT solar cell. The method includes a silicon wafer used for manufacturing the solar cell, a layer of transparent conductive oxidation film is deposited on the surface of the silicon wafer, and the specific manufacturing process is as follows: first a punctiform sizing agent A is printed in an area of main grids and fine grids for manufacturing the electrode on the reverse side of the silicon wafer for manufacturing an electrode; then a sizing agent B is printed above the sizing agent A; afterwards, the steps of S1 and S2 are repeated on the front side of the silicon wafer; and finally, the silicon wafer is put in a curing oven of 100 DEG C to 200 DEG C to be cured for 20 to 40 min. Through the method provided by the invention, metal sizing agents required for manufacturing the electrode can be greatly saved, and welding tension of the electrode can be improved at the same time.
Owner:南通苏民新能源科技有限公司

Conductive slurry for photovoltaic battery back electrode

The invention discloses conductive slurry for a photovoltaic battery back electrode. The conductive slurry comprises, by mass, 50% to 55% of silver powder, 12% to 20% of complexing agent containing zinc, 2% to 3% of lead-free glass powder, and 30% to 32% of organic binding phase. The grain size of the silver powder ranges from 1 micrometer to 3 micrometers. The complexing agent containing zinc is a mixture formed by zinc powder and an organic zinc addition agent, wherein the grain size of the zinc powder ranges from 0.5 micrometer to 4 micrometers, and the weight part ratio of the zinc powder to the organic zinc addition agent is 4: 0.1 to 4: 1. The organic binding phase is organic binding formed by dissolving ethyecellulose into a component solvent composed of butyl carbitol acetic ester and terpineol. The weight part ratio of ethyecellulose to butyl carbitol acetic ester to terpineol is 1: 5: 4. The organic zinc addition agent is zinc methacrylate. The conductive slurry maintains the existing technical performance, the cost of the conductive slurry is greatly reduced, and therefore competitiveness of a silicon crystal solar battery is improved.
Owner:SUZHOU ISILVER MATERIALS

Monocrystalline silicon wafer with grooves in surface, heterojunction solar cell and preparation method

ActiveCN113327999AReduce consumptionRealize efficiency improvement and cost reductionFinal product manufacturePhotovoltaic energy generationHeterojunctionSilver paste
The invention provides a monocrystalline silicon wafer with grooves in the surface, a heterojunction solar cell and a preparation method. Grooves are formed in the front face and the back face of the silicon wafer, the depth of each groove ranges from 5 micrometers to 50 micrometers, the width of each groove ranges from 10 micrometers to 100 micrometers, the internal morphology of each groove comprises one or two of a step shape and a pyramid shape, the surface morphology of the monocrystalline silicon wafer outside the grooves comprises a pyramid shape, and the surfaces of the steps and the pyramid correspond to the crystal face (111) of the silicon crystal. The distance between adjacent step edges on the same inclined plane is 0.1-10 [mu]m, and the height of the pyramid is 0.1-10 [mu]m. When the method is used for preparing the heterojunction solar cell, the contact area of the grid line and the transparent conductive film can be increased, the filling factor FF of the solar cell and the welding tension of the electrode can be improved, the shading area of the grid line can be reduced, and the short-circuit current Isc can be obviously improved; meanwhile, consumption of silver paste can be reduced, and efficiency improvement and cost reduction of the solar cell are achieved. In addition, the conductive performance of the silver paste and the speed of silk-screen printing are improved, so that the productivity of equipment is improved.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

High-density film for solar battery back sheet

The invention relates to the technical field of new energy sources, in particular to a high-density film for a solar battery back sheet. The high-density film for a solar battery back sheet comprisesthe components as follows: 5-10 parts of butyl rubber, 20-32 parts of polyvinylidene fluoride PVDF, 10-15 parts of methacrylate-butyl methacrylate copolymer, 4-10 parts of dipropylene glycol, 1-10 parts of methyl isobutyl ketone, 5-10 parts of silver paste, 5-15 parts of silica, 5-8 parts of polyetherimide, 1-9 parts of dimethylamino methylphenol, 5-10 parts of carboxymethylcellulose, 2-5 parts ofpolytrimethyldihydroquinoline, 0.2-1.0 parts of antioxidant DLTP, 2-8 parts of hindered amine light stabilizer and 0.5-1.5 parts of dioctyl ester. The silver paste includes terpineol, butyl diglycolacetate and tributyl citrate in a ratio of 2:2:3. The high-density film for a solar battery back sheet is resistant to heat, resistant to aging, good in water vapor resistance effect, high in weldingtension and good in photoelectric performance.
Owner:CHANGZHOU HUITIAN NEW MATERIALS

Electrochemical device and electronic device comprising same

The embodiment of the invention provides an electrochemical device and an electronic device comprising the same. In the electrochemical device, a first area is arranged on a first surface, facing a welding printing area, of a first part, and the surface roughness F1ZS of the first area is smaller than the surface roughness F3S of a third part, so that the surface of the first area is smoother. Therefore, the welding energy transmitted to the first sealing part is reduced, the integration and wettability between the first sealing part and the first adapter are improved, the risk of a liquid leakage channel is reduced, and then the liquid leakage risk caused by the existence of the liquid leakage channel after the sealing area of the electrochemical device is sealed is reduced, and the packaging reliability of the electrochemical device is effectively improved.
Owner:DONGGUAN POWERAMP TECH LTD
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