High-tension main grid silver paste applied to N-type solar cell and preparation method thereof

Abstract

The invention discloses high-tension main grid silver paste applied to an N-type solar cell and a preparation method thereof. The high-tension main grid silver paste applied to the N-type solar cell is prepared from silver powder (the value particle size is 700-900nm, the tap density of the spherical silver powder A is 5-6 g / mL, the median particle size of the spherical silver powder A is 280-450nm, and the tap density is a mixture of 4-5 g / mL spherical silver powder B), an organic carrier (a mixture of 3-5 wt% polyvinyl butyral ester resin and 5-10 wt% acrylic resin as main resin) and glasspowder (the median particle size is 0.7-1 [mu]m, and the copper-bismuth-manganese-tellurium series glass powder with the softening temperature of 600-800 DEG C) through mixing. The formula system canenable the silver paste to be good in adhesion with the surface of the n-type silicon wafer after sintering, enables the welding tension of the silver paste to be large, enables the welding tension ofa front main grid line to be 4N or above, is good in compactness of the paste, and is high in photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of conductive materials containing metals or alloys, and in particular relates to a high-tension busbar silver paste applied to N-type solar cells and a preparation method thereof. Background technique [0002] Commercial crystalline silicon solar cells mainly use P-type crystalline silicon as raw material, through production lines such as texturing, diffusion, etching and edge removal, silicon nitride anti-reflection coating, printing front silver grid lines, back aluminum and back silver electrodes, etc. process to obtain P-type crystalline silicon solar cells. Among them, the P-n junction of the P-type crystalline silicon solar cell is located on the front surface of the cell, and the photogenerated carriers in the P-type base can be effectively separated by diffusion and transported to the front surface of the cell, thereby realizing photoelectric conversion. According to the International Photovoltaic ...

AI Technical Summary

Problems solved by technology

Factors that affect the welding quality of busbar and ribbon mainly include silver paste of busbar, welding temperature and time, ribbon, flux, welding pressure of manual operation and return temperature speed of welding equipment, etc. Due to personnel and environmental influences, problems such as virtual soldering, over-soldering, and poor connection strength between the ribbon and the main grid occur

False welding will increase the series resistance of the module and reduce the current output efficiency of the module; over-welding will cause deformation and cracks of the cell

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