Glass material with low melting point and silver paste prepared from same

A glass frit, low melting point technology, used in conductive materials dispersed in non-conductive inorganic materials, cable/conductor manufacturing, photovoltaic power generation, etc. Resistance to silicon wafer electrical performance requirements and other issues, to achieve the effect of excellent electrical performance and welding tension

Active Publication Date: 2016-09-07
CHANGZHOU JUHE NEW MATERIAL CO LTD
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the mainstream first-type glass system can no longer meet the electrical performance requirements of high-resistivity silicon wafers; while the second-type glass system can effectively improve the electrical properties of silver-silicon contacts on high-resistance silicon wafers, but it faces reliability problems. The problem is that the pulling force of the silver electrode grid line prepared by using the front silver paste of the second type of glass system is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Glass material with low melting point and silver paste prepared from same
  • Glass material with low melting point and silver paste prepared from same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] The preparation method of the above-mentioned glass frit provided by the present invention can be prepared by conventional high-temperature melting and quenching method, or by sol-gel and other preparation methods.

[0019] For example, the high-temperature melting and quenching method is as follows: Weigh the raw materials according to the formula, and the raw materials can be oxides or carbonates; after mixing and homogenizing with a double-roller or a three-dimensional mixer, transfer them to an alumina crucible for melting, and the melting temperature range is 1100~1300℃, the melting time is 30~80min, stir during the melting process, and further homogenize; after the melting is completed, directly quench the glass melt, which can be quenched with deionized water or iron plate; The obtained glass frit is ball-milled with a planetary ball mill, and dried after the powder particle size D50 is less than 10um, more preferably less than 5um.

[0020] Herein, a range indic...

Embodiment 1

[0029] Fully mix 87wt% conductive silver powder, 2wt% A-1 glass frit, and 11wt% organic medium, use a three-roll mill to grind the slurry, use a scraper fineness agent to test the grinding fineness, and grind the slurry The fineness is below 10μm. The prepared slurry was named PA-1.

Embodiment 2

[0031] Fully mix 87wt% conductive silver powder, 2wt% A-2 glass frit, and 11wt% organic medium, use a three-roll mill to grind the slurry, use a scraper fineness agent to test the grinding fineness, and grind the slurry The fineness is below 10μm. The prepared slurry was named PA-2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a glass material with low melting point and a silver paste prepared from the same. The glass material is prepared from the following components: 30-60wt% of SnO, 8-25wt% of PbO or a mixture of PbO and any one of Bi2O3 and TeO2, 10-20wt% of B2O3 or a mixture of B2O3 and SiO2, 5-10wt% of P2O5, 1-10wt% of ZnO, 0-5wt% of one or more alkaline earth metal oxides, 0-5wt% of one or more alkali metal oxide and 0-5wt% of AuCl2. The glass material can be used for preparing a silver paste for silicon solar cell N-type emitting electrodes and improving contact resistance and electrode pull force between a silver electrode and a silicon emitting electrode.

Description

technical field [0001] The invention relates to the field of crystalline silicon solar cells, in particular to a glass frit of silver paste for an N-type emitter of a crystalline silicon solar cell. Background technique [0002] At present, the inorganic glass phase system used in the front silver paste for commercial crystalline silicon solar cells is mainly two types, the first type is Pb / Bi-B-Si system; the second type is Te-Pb / Bi-B-Si system; Si system. With the increasing demand for efficiency and reliability improvement of crystalline silicon solar cells, the diffusion resistance of silicon wafers is further increased, and the PN junction is changed from deep to shallow. The change in the silicon wafer process puts forward higher requirements on the silver-silicon contact performance of the front silver paste. The silver-silicon contact performance of the paste is mainly determined by the glass system used. At present, the mainstream first-type glass system can no l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00H01B1/22H01B13/00H01L31/0224
CPCC03C12/00H01B1/22H01B13/00H01L31/022425Y02E10/50
Inventor 任益超敖毅伟郑建华涂小平熊长军李宏伟
Owner CHANGZHOU JUHE NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap