Glass material for high-sheet-resistance shallow crystallized silicon solar cell as well as preparation method and slurry thereof

A solar cell and glass frit technology, applied to conductive materials dispersed in non-conductive inorganic materials, circuits, photovoltaic power generation, etc., can solve the problems of high loss, reduced electrode shading area, and large shading loss, etc., to improve contact resistance , Improve welding tension and good wetting ability

Active Publication Date: 2018-03-06
CHANGZHOU JUHE NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Then, the larger the square resistance of the silicon wafer, the more the loss when the current is transmitted laterally. Therefore, more sub-gates are needed to reduce the loss during the lateral transmission of the current. However, the more sub-gates, the greater the shading loss. Therefore, it is The sub-gate needs to be made thinner to reduce the shading area of ​​the electrode

Method used

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  • Glass material for high-sheet-resistance shallow crystallized silicon solar cell as well as preparation method and slurry thereof
  • Glass material for high-sheet-resistance shallow crystallized silicon solar cell as well as preparation method and slurry thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A glass frit for high square resistance shallow crystalline silicon solar cells, the raw materials of each component are shown in Table 1, using mass percentage, the preparation steps are: use a muffle furnace to melt the glass raw materials at 1300 ° C for 1 hour, fully homogenize After melting, the quenching process of glass is carried out by water quenching method, and the glass is ball-milled with a planetary ball mill to obtain powdered glass frit with a suitable particle size. The particle size distribution of the obtained glass frit is D50≤5μm, wherein, A-1~A -7 is the experimental group, and BL-1 is the control group, which is a commercially available glass powder.

[0022] Table I

[0023]

Embodiment 2

[0025] Prepare PA-1~PA-7 and PB-1 silver paste coatings with the glass frits prepared by the above-mentioned A-1~A-7 experimental groups and the glass frits purchased by the BL-1 control group respectively according to the following methods. The prepared silver paste was subjected to the next performance test.

Embodiment 2-1

[0027] Fully mix 86.5wt% conductive silver powder, 2.5wt% A-1 glass frit, and 11wt% organic medium, use a three-roll mill to grind the slurry, and use a scraper fineness agent to test the grinding fineness, slurry The grinding fineness of the slurry is below 10μm, and the prepared slurry is named PA-1.

[0028] Wherein, the organic medium is a mixture of ethyl cellulose, wood rosin, dibutyl phthalate, and butyl carbitol acetate.

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PUM

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Abstract

The invention discloses a glass material for a high-sheet-resistance shallow crystallized silicon solar cell. The glass material is prepared from the following raw materials: 10 weight percent to 30 weight percent of SeO2, 5 weight percent to 10 weight percent of PbO, 10 weight percent to 20 weight percent of WO3, 10 weight percent to 20 weight percent of SiO2, 10 weight percent to 20 weight percent of ZnO, 0 weight percent to 10 weight percent of alkaline earth metal oxide RO and 0 weight percent to 10 weight percent to alkaline earth metal oxide R2O. The invention further discloses a preparation method of the glass material, slurry prepared from the glass material and a preparation method of the slurry. The glass material disclosed by the invention is a Se-Pb-Si-W-Zn oxide system; the glass system has low glass transition temperature and softening temperature and has a relatively good wetting property on silver and silicon; the glass system is applied to a high-sheet-resistance shallow crystallized silicon wafer so that contact resistance is easy to improve; the glass material also has a very good wetting capability on silver powder and can be firmly combined with the silicon wafer, so that the welding pulling force of a silver electrode is improved.

Description

technical field [0001] The invention belongs to the technical field of conductive paste, in particular to a glass frit for high square resistance shallow crystalline silicon solar cells, a preparation method thereof and a paste prepared therefrom. The paste contains conductive metal, glass frit with low lead content and organic The conductive paste of the carrier. Background technique [0002] As we all know, the main factors affecting the efficiency loss of solar cells are: grid line shielding factors, grid lines and their contact resistance factors, and carrier recombination factors. In order to solve these loss factors, the main solution in the market is: "high square resistance, shallow junction, dense planting", that is, to make the square resistance of silicon wafers higher, the PN junction of silicon wafers to be closer to the front surface, and the width of sub-gates of cells to be thinner. More. [0003] The square resistance of the silicon wafer is determined by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00H01B1/22H01L31/0224
CPCC03C12/00H01B1/22H01L31/022425Y02E10/50
Inventor 乔梦书敖毅伟郑建华任益超万莉涂小平
Owner CHANGZHOU JUHE NEW MATERIAL CO LTD
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