30results about How to "Improve scattering efficiency" patented technology

A method and apparatus for improving the sensing of a physical parameter using a distributed optical waveguide and scattering. The optical waveguides have improved scattering efficiency and / or improved light capturing capability provided by multi-cladding layers and a tightly confining core waveguide. The core can be highly doped with a material such as germanium to improve scattering. The cladding layers provide a multi-mode waveguide for capturing scattered light. Such optical waveguides are useful in systems that rely on Rayleigh, Raman and Brillouin scattering.

In one aspect, the invention provides a titanium dioxide pigment. The titanium dioxide pigment comprises a plurality of titanium dioxide particles, and a polymer deposited on the titanium dioxide particles for inhibiting agglomeration of the titanium dioxide particles in an aqueous based coating formulation. The titanium dioxide particles have anchoring moieties associated therewith for facilitating anchoring of the polymer to the particles. The polymer is a copolymer having anchoring groups for attaching to the anchoring moieties associated with the titanium dioxide particles and hydrophobic end groups for attaching to the resin of the coating formulation. In another aspect, the invention provides a method of manufacturing a titanium dioxide pigment.

Provided is a reflection type liquid crystal display device comprising a liquid crystal layer (1), which can be switched between a transmission state and a scattering state, a front substrate (3) and a back substrate (2) for holding the liquid crystal layer (1) inbetween, a pair of electrodes (4 and 8) arranged across the liquid crystal layer (1) for applying a voltage to the liquid crystal layer(1), and first and second orientation films (13 and 12) formed between the liquid crystal layer (1), and the front substrate (3) and the back substrate (2), respectively. The liquid crystal layer (1)includes, for each pixel, a continuous wall (10), a plurality of small chambers (14) separated by the wall (10), and a plurality of liquid crystal regions (11) individually formed in any of the smallchambers (14). The liquid crystal regions (11) have first and second liquid crystal regions (11) having directors (20) in a plane parallel to the liquid crystal layer (1). The directors (20) of the first and second liquid crystal regions (11) are oriented in directions different from one another.

A backlight module includes a light guide plate, a plurality of light transmission elements and a light source. The light guide plate has at least one light incident surface, and the light transmission elements are disposed near the light incident surface and aligned to from at least one light transmission element row. The light source is disposed near one end of the light transmission element row and capable of emitting a light beam to the light transmission element row. Each of the light transmission elements reflects a part of the light beam to the light guide plate to form multiple independent light reflection paths, and the light transmission elements successively transmits a part of the light beam to form a light transmission path in the light transmission element row.

The invention discloses a microwave signal generating device and method of a photoelectric oscillator based on a liquid-core optical fiber Brillouin scattering effect.The microwave signal generating device includes a Brillouin scattering pump laser, an isolator, a modulator, a liquid-core optical fiber, a signal laser, a first circulator, a third laser, a second ring, a polarization beam splitter, a first optical fiber, a second optical fiber, a first polarization controller, a second polarization controller, a polarization beam combiner, a photoelectric detector, a coupler and a power amplifier.The device and the method can not only produce high-frequency microwave signals and can also obtain tunable microwave signals wider in tuning range.

The invention relates to an epitaxial structure of a deep ultraviolet semiconductor light emitting diode. The epitaxial structure sequentially includes a pattern substrate, a semiconductor buffer layer, an n-type semiconductor material layer, a multi-quantum well layer, a p-type electron blocking layer, and a p-type semiconductor material transport layer along the epitaxial direction; etching on the pattern substrate There are grooves. On each groove, a cavity structure is grown vertically upward. The cavity structure passes through the semiconductor buffer layer, n-type semiconductor material layer, and multiple quantum well layers. The top positions are the following three types: the first , aggregated in the p-type electron blocking layer, the aggregation depth of the cavity in the p-type electron blocking layer is 10-100nm, or, the second type, continue to pass through the p-type electron blocking layer, and aggregate in the p-type semiconductor material transport layer, The aggregation depth of the cavity in the p-type semiconductor material transport layer is 10-500nm, or, the third type, continue to pass through the p-type electron blocking layer and the p-type semiconductor material transport layer, the cavity is not aggregated, and the p-type semiconductor material The surface of the transmission layer appears as circular holes. The invention can improve the internal quantum efficiency of the deep-ultraviolet LED; and the cavity structure is incorporated into the quantum well, which can effectively improve the light scattering characteristics and improve the light extraction efficiency of the deep-ultraviolet light-emitting diode.