51results about How to "High temperature coefficient of resistance" patented technology

The invention relates to the technical field of electronic cigarettes, in particular to a microporous ceramic heater for electronic cigarettes and a preparation method of the heater. The microporous ceramic heater comprises a ceramic carrier and a heating film arranged on the ceramic carrier, wherein the ceramic carrier is provided with a plurality of curved through holes running through the ceramic carrier; cigarette oil of an external electronic cigarette permeates into the curved through holes; and the heating film is used for heating the ceramic carrier so that the cigarette oil in the curved through holes is atomized and leaks out. The preparation method of the microporous ceramic heater is simple and efficient, operation and control are convenient, the product quality is stable, andindustrial production is facilitated; the ceramic carrier has the advantages that the strength is high, powder is unlikely to shed, and no peculiar smell is generated during use; the prepared microporous ceramic heater is resistant to dry burning, the bonding strength between the heating film and a ceramic body is high, there is no gap between a heating film circuit and the ceramic body after long-term use, and smoke leakage cannot happen.

Provided is a heating temperature adjustment circuit in a thermal flow meter capable of adjusting fluctuations of a heating temperature of a heat-generating resistor due to fluctuations of resistances with high accuracy and low cost. The thermal flow meter comprises: a heat-generating resistor that generates heat when a current flows therethrough; a first temperature measuring resistor, a second resistor, a third resistor, and a fourth resistor whose resistance values vary due to temperature; and a fixed resistance having a resistance temperature coefficient lower than that of the first temperature measuring resistor, and measuring a flow rate of a fluid by controlling the heating temperature of the heat-generating resistor. The thermal flow meter includes: a first series circuit in which the fixed resistance, the first temperature measuring resistor, and the second resistor are connected to one another in series; and a second series circuit in which the third resistor and the fourth resistor are connected to each other in series, and generates a voltage to be added to the second series circuit based on voltages at both ends of the fixed resistance.

The invention discloses a method for preparing a vanadium oxide film by a metal oxidation method, which comprises the following steps of: (1) preparation of a silicon wafer with an Si3N4 layer; (2) preparation of a pure metal vanadium film, wherein the vacuum degree is (5-6)X 10<-4>Pa, the sputtering working pressure is between 1 and 2.0 Pa, and the sputtering time is between 10 and 20 min; and (3) annealing oxidation, wherein the annealing temperature is between 400 and 500 DEG C, and the annealing oxidation time is between 1and 2 hours. The invention provides the method for preparing the vanadium oxide film by the metal oxidation method with easy control and simple process, the resistance temperature coefficient of products reaches more than -3X10<-2>K<-1>, and preparation methods of thevanadium oxide film are developed. The vanadium oxide film is an ideal material for producing heat-sensitive sensors, infrared detectors and infrared imaging devices.

The invention discloses an optical gas sensor. The optical gas sensor comprises a substrate with a first surface and a second surface, a reflection layer arranged on the first surface of the substrate, plural electrode pads which are arranged on the first surface of the substrate and adjacent to the reflection layer, a sensing layer connected to the substrate via the electrode pads, an absorption layer arranged on the sensing layer, a first electrode layer which is arranged on the sensing layer and adjacent to the absorption layer and a second electrode layer arranged on the second surface of the substrate.

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.

A Ni-Zn-O-based heat-sensitive ceramic material and a preparation method thereof, belonging to the field of material science, the main raw material is Ni 2 o 3 and ZnO, the raw materials are wet-mixed by ball milling, washed, and dried to obtain ceramic powder, and the Ni-Zn-O series heat-sensitive ceramic material is obtained by grinding the powder, sieving, dry pressing, and high-temperature sintering . By controlling the Ni / Zn molar ratio and sintering temperature, the heat-sensitive properties of this material system can be tuned. The invention has simple ingredients and process, cheap raw materials, and wide application of materials; in terms of performance, it has high sensitivity index, good linearity of resistance temperature curve, and high temperature coefficient of resistance; simple process components, easy sintering of the system, and easy process Controlling, effectively reducing production costs, has a good implementation prospect.

The invention relates to a high-resistance temperature coefficient vanadium dioxide film and a low-temperature deposition method thereof. The thin film is composed of a vanadium trioxide seed crystallayer and a vanadium dioxide doped thin film layer, the vanadium trioxide seed crystal layer and the vanadium dioxide doped thin film layer are sequentially formed on a substrate through magnetron sputtering, wherein a chemical composition of the vanadium dioxide doped thin film layer is WxTiyV1-x-yO2, x is greater than 0 and less than 0.1, y is greater than 0 and less than 0.2, and the ratio of xto y is 0.1-0.5 to 1. The vanadium dioxide film prepared by the method is high in crystallization quality, and completely free of an impurity phase, and has a high resistance temperature coefficient.

The invention relates to the field of electronic ceramics and provides a PTCR ceramic material and a preparation method and application thereof. The PTCR ceramic material has a general formula x(BaTiO3)-y(SrTiO3)-(1-x-y)(CaTiO3)+a mol% M+b mol% N, x is greater than or equal to 0.6 and less than or equal to 0.9, y is greater than or equal to 0.1 and less than or equal to 0.4, a is greater than or equal to 0.1 and less than or equal to 1, b is greater than or equal to 0 and less than or equal to 3, the sum of x and y is less than or equal to 1, M represents any one or more of Y2O3, Bi2O3, La2O3, Sm2O3, Nb2O5, Ta2O5 and Sb2O5, and N represents any one or more of MnO2, CuO, Fe2O3, ZrO2, Al2O3, SiO2, TiO2, BN and B2O3. The PTCR ceramic material has the advantages of low Curie temperature, high resistance abrupt change ratio and high resistance temperature coefficient.

The invention discloses a normal temperature NTC thermistor film and a preparation method thereof; the film is made of VO 2 , MgV 2 o 5 A glassy multi-hybrid material as the main component. During the preparation, the reducing metal target and the vanadium pentoxide target are co-sputtered to deposit the thin film on the substrate under high vacuum condition. In particular, the invention utilizes the excellent reduction performance of magnesium atoms to reduce the +5-valent vanadium in the vanadium pentoxide to reduce the +4-valent vanadium to prepare an NTC thin film. By changing the power applied to the magnesium target and the vanadium pentoxide target, the ratio of different components in the film can be adjusted, and at the same time, the thermal hysteresis of the film resistance, temperature rise and fall, and resistivity can also be adjusted. Compared with the traditional method for preparing NTC thin films, the preparation of thin films by the present invention is simpler, faster, more efficient, and compatible with various substrates; the prepared NTC thin films do not require high-temperature annealing, and have good crystallization conditions; and have a high temperature coefficient of resistance at room temperature , small thermal hysteresis width, low film resistivity, high material constant and so on.

The invention relates to a low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and a preparation method thereof. The thin-film material is a V2-x-yMxNyO3 thin film formed on a substrate by using metal vanadium, metal M and metal N as targets, argon serving as a sputtering gas and oxygen serving as a reactant gas and carrying out magnetron sputtering on the targets, wherein x and y are less than 0.2 and greater than 0, the doping element M is W, Mo, Mg, Sb, Bb and / or Al, and the doping element N is Ti, Cr and / or Zn; the thin-film material has a non-heat stagnation resistance-temperature loop in the range from 80K to 225K. The thin-film material is based on a low-cost vanadium trioxide-based thin-film material; the purpose of eliminating a heat stagnation loop of the V2O3 thin film is achieved by adjusting the doping content of the elements on the condition that the thermochromic properties of the thin film are unchanged; the low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material is expected to be applied to a katathermometer or low-temperature space infrared detection.

The invention provides a temperature sensor film which is provided with a patterned metal thin film on a resin film substrate and has high temperature measurement precision. A conductive film (102) for producing a temperature sensor film is provided with a nickel thin film (10) on one main surface of a resin film substrate (50). The nickel thin film preferably has a plane spacing of less than 0.2040 nm between the (111) planes of nickel. A temperature sensor film can be obtained by patterning a nickel film to form a temperature measurement resistor part and a lead part connected to the temperature measurement resistor part.

The invention relates to the technical field of strain sensor preparation, in particular to a preparation method of a flexible strain sensor and the flexible strain sensor. The preparation method comprises the following steps: preparing a thin film insulating layer on a flexible substrate; forming a first carbon layer on one side of the thin film insulating layer; forming a catalytic metal layer on one side, far away from the thin film insulating layer, of the first carbon layer; forming a second carbon layer on one side, far away from the first carbon layer, of the catalytic metal layer; carrying out an annealing process, so that multiple layers of graphene are formed between the flexible substrate and the catalytic metal layer; wherein the first carbon layer, the catalytic metal layer and the second carbon layer have the same shape and are stacked in sequence, and the first carbon layer, the catalytic metal layer and the second carbon layer integrally form a resistance grid and electrode connection structure.