51results about How to "High temperature coefficient of resistance" patented technology

Provided is a heating temperature adjustment circuit in a thermal flow meter capable of adjusting fluctuations of a heating temperature of a heat-generating resistor due to fluctuations of resistances with high accuracy and low cost. The thermal flow meter comprises: a heat-generating resistor that generates heat when a current flows therethrough; a first temperature measuring resistor, a second resistor, a third resistor, and a fourth resistor whose resistance values vary due to temperature; and a fixed resistance having a resistance temperature coefficient lower than that of the first temperature measuring resistor, and measuring a flow rate of a fluid by controlling the heating temperature of the heat-generating resistor. The thermal flow meter includes: a first series circuit in which the fixed resistance, the first temperature measuring resistor, and the second resistor are connected to one another in series; and a second series circuit in which the third resistor and the fourth resistor are connected to each other in series, and generates a voltage to be added to the second series circuit based on voltages at both ends of the fixed resistance.

The invention relates to the technical field of electronic cigarettes, in particular to a microporous ceramic heater for electronic cigarettes and a preparation method of the heater. The microporous ceramic heater comprises a ceramic carrier and a heating film arranged on the ceramic carrier, wherein the ceramic carrier is provided with a plurality of curved through holes running through the ceramic carrier; cigarette oil of an external electronic cigarette permeates into the curved through holes; and the heating film is used for heating the ceramic carrier so that the cigarette oil in the curved through holes is atomized and leaks out. The preparation method of the microporous ceramic heater is simple and efficient, operation and control are convenient, the product quality is stable, andindustrial production is facilitated; the ceramic carrier has the advantages that the strength is high, powder is unlikely to shed, and no peculiar smell is generated during use; the prepared microporous ceramic heater is resistant to dry burning, the bonding strength between the heating film and a ceramic body is high, there is no gap between a heating film circuit and the ceramic body after long-term use, and smoke leakage cannot happen.

The invention discloses a method for processing a suspended silicon thermistor and belongs to the technical field of micro electro mechanical systems (MEMS). The method comprises the following steps of: firstly etching a back cavity, and then performing manufacturing of the suspended silicon thermistor and other metal conductors. Compared with the prior art, the invention has the advantages that 1 silicon serves as a heat-sensitive material, so that a resistance temperature coefficient of the thermistor is increased; 2. according to the method, the thermistor with suspended length of 1.3mm can be processed, the sensitivity and the response time of airflow detection and the yield of the thermistor are improved, an suspended distance is enlarged, and a millimeter scale is achieved; 3. the back cavity and the thermistor are sequentially etched in the processing process, and because the secondary protection is not required, process steps are simplified, and the yield is increased; and 4, the suspended thermistor is processed based on an standard MEMS (Micro-Electro-Mechanical Systems) process, and the mass production is easily realized.

The invention relates to a rare earth nickel-based perovskite oxide thermistor material for infrared detection and belongs to the field of infrared detection. According to the rare earth nickel-basedperovskite oxide thermistor material for infrared detection, a rare earth nickel-based perovskite oxide insulator phase (or semiconductor phase) having a high resistance temperature coefficient is adopted as a thermistor material in infrared detection technology; methods such as methods for adjusting the types of rare earth elements in the rare earth nickel-based perovskite oxide material, the stress of a rare earth nickel-based material, the stoichiometric ratios of the rare earth element and nickel element of the rare earth nickel-based material are adopted so as to adjust the transformationtemperature of the metal insulator phase of the rare earth nickel-based perovskite oxide thermistor material, and therefore, an infrared detection temperature range can be adjusted; and a rare earthnickel-based perovskite oxide can be combined and integrated with different carrier materials, so that devices can be prepared, and therefore, the detection of infrared signals in the range of 10K to500K can be realized. The earth nickel-based perovskite oxide thermistor material of the invention has considerable application value and broad application prospect in infrared detection, radiation heat micro-metering, temperature detection and sensing.

The invention discloses stainless steel base material-based PTC thermistor paste and a preparation method thereof. The PTC thermistor paste comprises an inorganic bonding phase, a composite functional phase and an organic carrier, wherein the inorganic bonding phase is lead-free microcrystalline glass powder prepared from SiO2, MgO, B2O3, Al2O3, Bi2O3, a rare-earth oxide and a nucleation agent; the composite functional phase is composite powder prepared from micron silver powder, nano silver powder and doped copper ruthenate powder; and the organic carrier is a mixture prepared from an organic solvent, a high-polymer thickener, a dispersing agent, a defoamer and a thixotropic agent. The PTC thermistor paste is high and adjustable in sheet resistance, high and adjustable in resistance temperature coefficient and excellent in printing characteristic and burning characteristic and can be matched with an insulated stainless steel base material. The preparation method sequentially comprises the steps of preparing the inorganic bonding phase, preparing the composite functional phase, preparing the organic carrier and preparing the resistor paste. By the preparation method, the PTC thermistor paste can be effectively produced and prepared.

The invention provides a micro-bolometer based on graphene quantum points. The micro-bolometer comprises a substrate whose middle part is provided with a groove. The graphene quantum points are hanged above the groove and are connected through a graphene strip. Two ends of the graphene strip extend out of a graphene film to cover the substrate at two sides of the groove to form graphene electrodes. The micro-bolometer is characterized in that a hanged island-shaped graphene quantum point array is formed through the micro nano processing technology, the device temperature change in a same incident light power is increased by using the heat insulation effect by groove suspension, the device resistance temperature coefficient is raised by using quantization graphene, and the photoelectric detection is realized based on a micro-bolometer principle. Due to the absorption characteristic of a graphene material in an infrared wave band, the micro-bolometer provided by the invention can be used for the photoelectric detection of middle and far-infrared and terahertz wave bands, and a novel solution is provided for a present infrared photoelectric detector.

The invention relates to the field of electronic ceramics and provides a PTCR ceramic material and a preparation method and application thereof. The PTCR ceramic material has a general formula x(BaTiO3)-y(SrTiO3)-(1-x-y)(CaTiO3)+a mol% M+b mol% N, x is greater than or equal to 0.6 and less than or equal to 0.9, y is greater than or equal to 0.1 and less than or equal to 0.4, a is greater than or equal to 0.1 and less than or equal to 1, b is greater than or equal to 0 and less than or equal to 3, the sum of x and y is less than or equal to 1, M represents any one or more of Y2O3, Bi2O3, La2O3, Sm2O3, Nb2O5, Ta2O5 and Sb2O5, and N represents any one or more of MnO2, CuO, Fe2O3, ZrO2, Al2O3, SiO2, TiO2, BN and B2O3. The PTCR ceramic material has the advantages of low Curie temperature, high resistance abrupt change ratio and high resistance temperature coefficient.

The invention discloses a method for preparing a vanadium oxide film by a metal oxidation method, which comprises the following steps of: (1) preparation of a silicon wafer with an Si3N4 layer; (2) preparation of a pure metal vanadium film, wherein the vacuum degree is (5-6)X 10Pa, the sputtering working pressure is between 1 and 2.0 Pa, and the sputtering time is between 10 and 20 min; and (3) annealing oxidation, wherein the annealing temperature is between 400 and 500 DEG C, and the annealing oxidation time is between 1and 2 hours. The invention provides the method for preparing the vanadium oxide film by the metal oxidation method with easy control and simple process, the resistance temperature coefficient of products reaches more than -3X10K, and preparation methods of the vanadium oxide film are developed. The vanadium oxide film is an ideal material for producing heat-sensitive sensors, infrared detectors and infrared imaging devices.

The invention provides an alloy material with high temperature coefficient of resistance. The alloy material is prepared by adding six metal components as the additives to nickel-ferrum alloy, and smelting same to obtain the product, wherein the six metal components are respectively germanium, zirconium, cerium, titanium, aluminum and ferrum; and the alloy material comprises the following components in percentage by weight: 50-65% of component Ni, 14-21% of component Cr, 0.1-0.9% of component Ge, 0.15-0.5% of component Ce, 0.2-1% of component Zr, 1.1-3.5% of component Ti, 0.5-2% of component Al, and the balance of component Fe. The invention also provides a preparation method of the alloy material. The alloy material prepared by the preparation method provided by the invention is of 8.2g / cm<3> based on the density, and has the resistivity of 1.53 (microhm.megabyte.20 DEG C); and the alloy material has temperature coefficient of resistance of 240aR / *10<-6>DEG / C under 100-800 DEG C; and the temperature is in good linear relation to the resistivity.

The present invention relates to a current-limiting armored cable. It adopts the new type nickel-iron alloy heating thread, which chemistry element is that Ni:69-72%, Fe:31-28% w. The alloy thread and insulation material MgO powder are encapsulated in Inconel 600, the stainless steel or the nickel pipe to form the limiting current armored cable which diameter span is diameter 1.0-1.5 mm. Moreover the present invention provides a heating component made of the armored cable. The armored cable is machined into the changeable transect heating component, the end of the cable is welding point, and the other end is the sealed down-lead end. The ratio of the heating cable and the heating component is no little than 1.5. It can quickly heat and adjust heating power, increase the work life.

The invention relates to a low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and a preparation method thereof. The thin-film material is a V2-x-yMxNyO3 thin film formed on a substrate by using metal vanadium, metal M and metal N as targets, argon serving as a sputtering gas and oxygen serving as a reactant gas and carrying out magnetron sputtering on the targets, wherein x and y are less than 0.2 and greater than 0, the doping element M is W, Mo, Mg, Sb, Bb and / or Al, and the doping element N is Ti, Cr and / or Zn; the thin-film material has a non-heat stagnation resistance-temperature loop in the range from 80K to 225K. The thin-film material is based on a low-cost vanadium trioxide-based thin-film material; the purpose of eliminating a heat stagnation loop of the V2O3 thin film is achieved by adjusting the doping content of the elements on the condition that the thermochromic properties of the thin film are unchanged; the low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material is expected to be applied to a katathermometer or low-temperature space infrared detection.

A self-monitoring flow-through heater. The heater has a wire inside a tube, and the wire heats and monitors the temperature of a fluid flowing through the tube. The wire has a high specific resistivity and a high temperature coefficient of resistance, so that monitoring the voltage across and / or the current flowing through the wire measures the mean temperature of the wire and of the fluid in the tube.

The invention relates to an infrared bridge type temperature measurement sensor, which comprises a substrate and a resistor bridge consisting of four resistors. The sensor is characterized in that: the resistor bridge has an annular structure formed by connecting a photosensitive resistor, two environmental reference resistors and a joule reference resistor end to end; and the position, where the photosensitive resistor and the joule reference resistor are arranged, of the substrate is provided with a groove. The bridge type structure adopted by the sensor is favorable for reducing the influence of environmental temperature and joule heat on the output signals of the sensor and improving the working adaptability of the sensor; the target temperature can be effectively judged according to the magnitude of the bridge output signals; the sensitivity of the sensor is effectively improved by using the photosensitive resistor, the joule reference resistor and the environmental reference resistors; and the substrate below the photosensitive resistor and the joule reference resistor is provided with the groove structure so as to improve the accuracy of temperature measurement.

Provided is a heating temperature adjustment circuit in a thermal flow meter capable of adjusting fluctuations of a heating temperature of a heat-generating resistor due to fluctuations of resistances with high accuracy and low cost. The thermal flow meter comprises: a heat-generating resistor that generates heat when a current flows therethrough; a first temperature measuring resistor, a second resistor, a third resistor, and a fourth resistor whose resistance values vary due to temperature; and a fixed resistance having a resistance temperature coefficient lower than that of the first temperature measuring resistor, and measuring a flow rate of a fluid by controlling the heating temperature of the heat-generating resistor. The thermal flow meter includes: a first series circuit in which the fixed resistance, the first temperature measuring resistor, and the second resistor are connected to one another in series; and a second series circuit in which the third resistor and the fourth resistor are connected to each other in series, and generates a voltage to be added to the second series circuit based on voltages at both ends of the fixed resistance.

The invention relates to a PTC thermal sensitive ceramic material with high Curie temperature. The ceramic material is prepared from the following raw materials in percentage by weight: 86-95% of Ba0.4Pb0.6TiO3, 0.01-2.8% of La2O3, 0.1-4.0% of Si3N4, 0.01-1.5% of CaNb2O6, 0.5-2% of MnSiO3, 0.01-2.5% of Li2O-B2O3-SiO2 glass powder and 0.02-1.5% of LaCrZrO5. The invention also provides a preparation method of the PTC thermal sensitive ceramic material with high Curie temperature. The PTC thermal sensitive ceramic material provided by the invention is high in Curie temperature, low in room temperature resistivity, high in liftdrag ratio, great in temperature coefficient of resistance (alpha) and good in comprehensive thermosensitive performance. The sintering temperature is low during preparation, the cost can be lowered, volatilization of lead is inhibited, and the environment is not polluted.

The invention relates to a high-resistance temperature coefficient vanadium dioxide film and a low-temperature deposition method thereof. The thin film is composed of a vanadium trioxide seed crystallayer and a vanadium dioxide doped thin film layer, the vanadium trioxide seed crystal layer and the vanadium dioxide doped thin film layer are sequentially formed on a substrate through magnetron sputtering, wherein a chemical composition of the vanadium dioxide doped thin film layer is WxTiyV1-x-yO2, x is greater than 0 and less than 0.1, y is greater than 0 and less than 0.2, and the ratio of xto y is 0.1-0.5 to 1. The vanadium dioxide film prepared by the method is high in crystallization quality, and completely free of an impurity phase, and has a high resistance temperature coefficient.

The invention discloses an anti-theft mobile phone based on a temperature sensor array, comprising a face plate, a back plate and four sides; multiple temperature sensors arranged in a two-dimensional array are evenly distributed on the back plate and the four sides; the temperature sensors are connected to the central processing unit chip in a mobile phone and are used for collecting the shape of an isothermal curve; a fingerprint rough identification module, a timing module and a warning removing module are arranged in the central processing unit chip; the warning removing module is connected to a warner; the fingerprint rough identification module is used for identifying whether the shape of the isothermal curve is a human fingerprint; the timing module is used for accumulating the time when the temperature sensors sense the fingerprint for the first time; the warning removing module is used for preventing the warner from generating warning prompting information; and the warner is used for generating the warning prompting information;. Compared with the existing anti-theft mobile phone, the anti-theft mobile phone of the invention is equipped with active anti-theft function; the anti-theft effect is good; and the false warning information generated when the mobile phone owner takes out the mobile phone can be prevented.

The invention discloses a normal-temperature NTC thermistor film and a preparation method thereof. The film is a glassy state multi-mixed material taking VO2 and Mg2V2O5 as main components. During preparation, under a high vacuum condition, a reductive metal target and a vanadium pentoxide target are subjected to co-sputtering deposition on a substrate to form a thin film. According to the presentinvention, the NTC film is prepared by reducing + 5 valence vanadium in vanadium pentoxide into + 4 valence vanadium by particularly utilizing the excellent reducing property of magnesium atoms. By changing the power added to the magnesium target and the vanadium pentoxide target, the proportion of different components in the film is adjusted, and meanwhile, the temperature rising and falling hysteresis and resistivity of a film resistor can be adjusted. Compared with a traditional NTC film preparation method, the film preparation method of the present invention is simpler, faster and more efficient, and is compatible with various substrates. The prepared NTC film does not need the high-temperature annealing, is good in crystallization condition, and has the characteristics of high resistance temperature coefficient, small heat hysteresis width, low film resistivity, high material constant and the like at room temperature.

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.

Provided is a temperature sensor film comprising a metal-thin film patterned on a resin film substrate, and having high temperature measurement accuracy. A conductive film (102) that is used for producing a temperature sensor film has a nickel thin film (10) on one principal surface of a resin film substrate (50). It is preferable that the interplanar spacing of nickel (111) plane in the nickel thin-film is less than 0.2040 nm. The temperature sensor film is obtained by patterning the nickel thin film to form a temperature-measuring resistance part and a lead part connected to the temperature-measuring resistance part.

The invention discloses an optical gas sensor. The optical gas sensor comprises a substrate with a first surface and a second surface, a reflection layer arranged on the first surface of the substrate, plural electrode pads which are arranged on the first surface of the substrate and adjacent to the reflection layer, a sensing layer connected to the substrate via the electrode pads, an absorption layer arranged on the sensing layer, a first electrode layer which is arranged on the sensing layer and adjacent to the absorption layer and a second electrode layer arranged on the second surface of the substrate.

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.

The invention relates to a high-resistance temperature coefficient vanadium dioxide film and a low-temperature deposition method thereof. The thin film is composed of a vanadium trioxide seed crystallayer and a vanadium dioxide doped thin film layer, the vanadium trioxide seed crystal layer and the vanadium dioxide doped thin film layer are sequentially formed on a substrate through magnetron sputtering, wherein a chemical composition of the vanadium dioxide doped thin film layer is WxTiyV1-x-yO2, x is greater than 0 and less than 0.1, y is greater than 0 and less than 0.2, and the ratio of xto y is 0.1-0.5 to 1. The vanadium dioxide film prepared by the method is high in crystallization quality, and completely free of an impurity phase, and has a high resistance temperature coefficient.

The invention relates to the field of electronic ceramics and provides a PTCR ceramic material and a preparation method and application thereof. The PTCR ceramic material has a general formula x(BaTiO3)-y(SrTiO3)-(1-x-y)(CaTiO3)+a mol% M+b mol% N, x is greater than or equal to 0.6 and less than or equal to 0.9, y is greater than or equal to 0.1 and less than or equal to 0.4, a is greater than or equal to 0.1 and less than or equal to 1, b is greater than or equal to 0 and less than or equal to 3, the sum of x and y is less than or equal to 1, M represents any one or more of Y2O3, Bi2O3, La2O3, Sm2O3, Nb2O5, Ta2O5 and Sb2O5, and N represents any one or more of MnO2, CuO, Fe2O3, ZrO2, Al2O3, SiO2, TiO2, BN and B2O3. The PTCR ceramic material has the advantages of low Curie temperature, high resistance abrupt change ratio and high resistance temperature coefficient.

The invention discloses a normal temperature NTC thermistor film and a preparation method thereof; the film is made of VO 2 , MgV 2 o 5 A glassy multi-hybrid material as the main component. During the preparation, the reducing metal target and the vanadium pentoxide target are co-sputtered to deposit the thin film on the substrate under high vacuum condition. In particular, the invention utilizes the excellent reduction performance of magnesium atoms to reduce the +5-valent vanadium in the vanadium pentoxide to reduce the +4-valent vanadium to prepare an NTC thin film. By changing the power applied to the magnesium target and the vanadium pentoxide target, the ratio of different components in the film can be adjusted, and at the same time, the thermal hysteresis of the film resistance, temperature rise and fall, and resistivity can also be adjusted. Compared with the traditional method for preparing NTC thin films, the preparation of thin films by the present invention is simpler, faster, more efficient, and compatible with various substrates; the prepared NTC thin films do not require high-temperature annealing, and have good crystallization conditions; and have a high temperature coefficient of resistance at room temperature , small thermal hysteresis width, low film resistivity, high material constant and so on.

The invention relates to a low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and a preparation method thereof. The thin-film material is a V2-x-yMxNyO3 thin film formed on a substrate by using metal vanadium, metal M and metal N as targets, argon serving as a sputtering gas and oxygen serving as a reactant gas and carrying out magnetron sputtering on the targets, wherein x and y are less than 0.2 and greater than 0, the doping element M is W, Mo, Mg, Sb, Bb and / or Al, and the doping element N is Ti, Cr and / or Zn; the thin-film material has a non-heat stagnation resistance-temperature loop in the range from 80K to 225K. The thin-film material is based on a low-cost vanadium trioxide-based thin-film material; the purpose of eliminating a heat stagnation loop of the V2O3 thin film is achieved by adjusting the doping content of the elements on the condition that the thermochromic properties of the thin film are unchanged; the low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material is expected to be applied to a katathermometer or low-temperature space infrared detection.

The invention relates to the technical field of strain sensor preparation, in particular to a preparation method of a flexible strain sensor and the flexible strain sensor. The preparation method comprises the following steps: preparing a thin film insulating layer on a flexible substrate; forming a first carbon layer on one side of the thin film insulating layer; forming a catalytic metal layer on one side, far away from the thin film insulating layer, of the first carbon layer; forming a second carbon layer on one side, far away from the first carbon layer, of the catalytic metal layer; carrying out an annealing process, so that multiple layers of graphene are formed between the flexible substrate and the catalytic metal layer; wherein the first carbon layer, the catalytic metal layer and the second carbon layer have the same shape and are stacked in sequence, and the first carbon layer, the catalytic metal layer and the second carbon layer integrally form a resistance grid and electrode connection structure.