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Method for preparing vanadium oxide film by metal oxidation method

A technology of vanadium oxide thin film and oxidation method, which is applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of complex process and many control parameters, and achieves simple process, expanded preparation method, and easy control. Effect

Inactive Publication Date: 2009-10-21
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the disadvantages of the prior art that there are many control parameters and complex processes, and provide a method for preparing a vanadium oxide film with a higher temperature coefficient of resistance by metal oxidation. The resistance temperature of the vanadium oxide film prepared by this method is Factor up to -3×10 -2 K -1 Above, the preparation method is simple

Method used

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  • Method for preparing vanadium oxide film by metal oxidation method
  • Method for preparing vanadium oxide film by metal oxidation method

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Experimental program
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Effect test

Embodiment 1

[0023] (1) Preparation of Si 3 N 4 Process conditions: Body vacuum: 4.5×10 -1 Pa; working gas: NH 4 and with N 2 Diluted SiH 4 ; Working pressure: 4.3Pa; NH 4 and with N 2 Flow rate: 12ml / min and 38ml / min; substrate temperature: 100°C, deposition for 12 minutes. Si 3 N 4 Approx. Si was grown on the surface 3 N 4 The first-layer silicon wafer is cut into a rectangular substrate with a size of 2cm×1cm for plating metal vanadium thin film;

[0024] (2) Si obtained by step (1) 3 N 4 The substrate is placed in the vacuum chamber of the DPS-III type ultra-high vacuum target magnetron sputtering equipment. Metal vanadium with a mass purity of 99.9% is used as the target material, and argon gas with a mass purity of 99.999% is used as the working gas. Take the background vacuum as 5×10 -4 Pa, the sputtering working pressure is 1Pa, the sputtering time is 20min, the Ar gas flow rate is 48ml / min, and the metal vanadium thin film is prepared.

[0025] (3) the metal vanad...

Embodiment 2

[0029] (1) Preparation of Si 3 N 4 Process conditions: Body vacuum: 4.5×10 -1 Pa; working gas: NH 4 and with N 2 Diluted SiH 4 ; Working pressure: 4.3Pa; NH 4 and with N 2 Flow rate: 12ml / min and 38ml / min; substrate temperature: 100°C, deposition for 12 minutes. Si 3 N 4 Approx. Si was grown on the surface 3 N 4 The first-layer silicon wafer is cut into a rectangular substrate with a size of 2cm×1cm for plating metal vanadium thin film;

[0030] (2) Si obtained by step (1) 3 N 4 The substrate is placed in the vacuum chamber of the DPS-III type ultra-high vacuum target magnetron sputtering equipment. Metal vanadium with a mass purity of 99.9% is used as the target material, and argon gas with a mass purity of 99.999% is used as the working gas. Take the background vacuum as 5×10 -4 Pa, the sputtering working pressure is 2Pa, the sputtering time is 10min, the Ar gas flow rate is 48ml / min, and the metal vanadium thin film is prepared.

[0031] (3) the metal vanad...

Embodiment 3

[0035] (1) Preparation of Si 3 N 4 Process conditions: Body vacuum: 4.5×10 -1 Pa; working gas: NH 4 and with N 2 Diluted SiH 4 ; Working pressure: 4.3Pa; NH 4 and with N 2 Flow rate: 12ml / min and 38ml / min; substrate temperature: 100°C, deposition for 12 minutes. Si 3 N 4 Approx. Si was grown on the surface 3 N 4 The first-layer silicon wafer is cut into a rectangular substrate with a size of 2cm×1cm for plating metal vanadium thin film;

[0036] (2) Si obtained by step (1) 3 N 4The substrate is placed in the vacuum chamber of the DPS-III type ultra-high vacuum target magnetron sputtering equipment. Metal vanadium with a mass purity of 99.9% is used as the target material, and argon gas with a mass purity of 99.999% is used as the working gas. Take the background vacuum as 5×10 -4 Pa, the sputtering working pressure is 2Pa, the sputtering time is 20min, the Ar gas flow rate is 48ml / min, and the metal vanadium thin film is prepared.

[0037] (3) the metal vanadi...

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Abstract

The invention discloses a method for preparing a vanadium oxide film by a metal oxidation method, which comprises the following steps of: (1) preparation of a silicon wafer with an Si3N4 layer; (2) preparation of a pure metal vanadium film, wherein the vacuum degree is (5-6)X 10Pa, the sputtering working pressure is between 1 and 2.0 Pa, and the sputtering time is between 10 and 20 min; and (3) annealing oxidation, wherein the annealing temperature is between 400 and 500 DEG C, and the annealing oxidation time is between 1and 2 hours. The invention provides the method for preparing the vanadium oxide film by the metal oxidation method with easy control and simple process, the resistance temperature coefficient of products reaches more than -3X10K, and preparation methods of the vanadium oxide film are developed. The vanadium oxide film is an ideal material for producing heat-sensitive sensors, infrared detectors and infrared imaging devices.

Description

technical field [0001] The invention relates to a vanadium oxide film thermistor, in particular to a method for preparing a vanadium oxide film by a metal oxidation method. Background technique [0002] Vanadium oxide film VOx has a high temperature coefficient of resistance at room temperature, which can reach -3×10 -2 K -1 The above is 5 to 10 times that of ordinary metal thin films, and is currently an ideal material for making thermal sensors, infrared detectors and infrared imaging devices. At present, the main method for preparing vanadium oxide thin films is the reactive sputtering coating method, that is, in a vacuum chamber, argon and oxygen are introduced at the same time, argon is used as a protective gas, and oxygen is used as a reactive gas. While sputtering metal vanadium, oxygen and vanadium react directly to form a vanadium oxide film. This preparation method requires very strict conditions, and needs to control many parameters at the same time, which is re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/54
Inventor 胡明陈涛梁继然逯家宁杨海波
Owner TIANJIN UNIV
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