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High-resistance temperature coefficient vanadium dioxide film and low-temperature deposition method thereof

A technology of vanadium dioxide and temperature coefficient, which is applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the difficulty in controlling the composition of mixed vanadium oxide thin films, and the easy generation of impurity and oxidation in the thin film preparation process. Vanadium polycrystalline thin film complex phase diagram and other problems, to achieve the effect of improving the temperature coefficient of resistance, easy spontaneous crystallization, and a wide range of deposition temperature

Active Publication Date: 2018-05-25
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes the preparation of vanadium oxide film a difficult point in the development of thermal devices. Because of the many and complex phases, it will inevitably lead to great difficulty in controlling the composition of the mixed vanadium oxide film, thus affecting the stability of the device.
Vanadium dioxide thin films have the characteristics of high melting point, phase transition temperature close to room temperature, and good stability. Vanadium oxide film, while eliminating thermal hysteresis, making full use of the ultra-high sensitivity of resistance near the phase transition region, is expected to obtain high temperature coefficient of resistance and high stability of VO 2 Pure phase thin film will significantly improve the detection performance and stability of the device
Reactive magnetron sputtering is currently one of the most common methods for preparing vanadium oxide thermosensitive thin films, but this method has low controllability and repeatability due to the use of metal as the target material
[0005] The phase diagram of vanadium oxide polycrystalline film is complex, so VO 2 The thin film preparation process is prone to impurity phases and has a thermal hysteresis loop

Method used

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  • High-resistance temperature coefficient vanadium dioxide film and low-temperature deposition method thereof
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  • High-resistance temperature coefficient vanadium dioxide film and low-temperature deposition method thereof

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Experimental program
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Effect test

Embodiment 1

[0052] (a) Vanadium trioxide (V 2 o 3 ) target compression: to analyze the pure V 2 o 3 Powder is the main raw material, put it into an automatic mortar and grind it fully for more than 12 hours; put the ground powder into a mold for pre-pressing, the shape is cylindrical, the diameter is 5cm, and the thickness is 0.5cm; it is pressed by cold isostatic pressing into V 2 o 3 Target material, pressure 260MPa, holding time 15min;

[0053] (b) W, Ti co-doped VO 2 Compression of target material: to analyze pure WO 3 、TiO 2 and VO 2 Nano powder is the main raw material, according to W 0.05 Ti 0.1 V 0.85 o 2 The stoichiometric ratio is weighed, mixed and put into an automatic mortar for full grinding for more than 12 hours; the ground powder is put into a mold, and hot-pressed and sintered through a hot-press furnace at a sintering temperature of 620°C and a pressure of 30MPa. The diameter is 5-5.2cm, and the thickness is 0.5cm;

[0054] (c) Preparation and cleaning of ...

Embodiment 2

[0059] (a) Vanadium trioxide (V 2 o 3 ) The pressing of target material: with embodiment 1.

[0060] (b) W, Ti co-doped VO 2 Compression of target material: to analyze pure WO 3 、TiO 2 and VO 2 Nano powder is the main raw material, according to W 0.01 Ti 0.1 V 0.89 o 2 The stoichiometric ratio is weighed, mixed and put into an automatic mortar for full grinding for more than 12 hours; the ground powder is put into a mold, and hot-pressed and sintered through a hot-press furnace at a sintering temperature of 640 ° C and a pressure of 20 MPa. The diameter is 5-5.2cm, and the thickness is 0.5cm;

[0061] (c) Preparation and cleaning of the substrate: using SiN plated x The Si wafer used as the growth substrate was ultrasonically cleaned with organic solvents such as acetone and isopropanol in sequence for 5 minutes, and finally dried with a nitrogen gun;

[0062] (d)V 2 o 3 Growth of seed layer: using magnetron sputtering method, vacuum pumping to 1*10 -5 Pa, fill w...

Embodiment 3

[0066] (a) Vanadium trioxide (V 2 o 3 ) The pressing of target material: with embodiment 1.

[0067] (b) W, Ti co-doped VO 2 Compression of target material: to analyze pure WO 3 、TiO 2 and VO 2 Nano powder is the main raw material, according to W 0.01 Ti 0.1 V 0.89 o 2 The stoichiometric ratio is weighed, mixed and put into an automatic mortar for full grinding for more than 12 hours; the ground powder is put into a mold, and hot-pressed and sintered in a hot-press furnace at a sintering temperature of 600°C and a pressure of 40MPa. The diameter is 15cm, the thickness is 0.5cm;

[0068] (c) Preparation and cleaning of the substrate: using SiN plated x The Si wafer used as the growth substrate was ultrasonically cleaned with organic solvents such as acetone and isopropanol in sequence for 5 minutes, and finally dried with a nitrogen gun;

[0069] (d)V 2 o 3 Growth of seed layer: using magnetron sputtering method, vacuum pumping to 4*10 -5 Pa, fill with high-purity...

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Abstract

The invention relates to a high-resistance temperature coefficient vanadium dioxide film and a low-temperature deposition method thereof. The thin film is composed of a vanadium trioxide seed crystallayer and a vanadium dioxide doped thin film layer, the vanadium trioxide seed crystal layer and the vanadium dioxide doped thin film layer are sequentially formed on a substrate through magnetron sputtering, wherein a chemical composition of the vanadium dioxide doped thin film layer is WxTiyV1-x-yO2, x is greater than 0 and less than 0.1, y is greater than 0 and less than 0.2, and the ratio of xto y is 0.1-0.5 to 1. The vanadium dioxide film prepared by the method is high in crystallization quality, and completely free of an impurity phase, and has a high resistance temperature coefficient.

Description

technical field [0001] The invention relates to the technical field of detectors and sensors, in particular to a vanadium dioxide film with a high temperature coefficient of resistance and a method for preparing a vanadium dioxide film with a high temperature coefficient of resistance under low temperature conditions, which can be used for uncooled infrared detectors, The preparation technology of sensitive thin film materials such as sensors based on the principle of thermal sensitivity. Background technique [0002] As a thermosensitive film, vanadium oxide film has the advantages of high response rate, high temperature coefficient of resistance, good MENS process compatibility and integrated circuit process compatibility, etc. Therefore, vanadium oxide film is widely used as a thermosensitive film to prepare Microbolometer type uncooled focal plane array and corresponding uncooled infrared detector (Wei Liangzhong, Zhu Wanglong, Liu Yan, Chen Liming, A method for preparin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/083C23C14/352
Inventor 曹逊金平实孙光耀李荣
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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