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Method for preparing modified infrared detecting material - amorphous SiGe film

A thin film and modification technology, which is applied in the field of preparation of infrared thermal detection materials, can solve the problems of difficult to accurately measure infrared radiation power, and the infrared spectral characteristics of thermistors are not flat enough.

Inactive Publication Date: 2007-12-12
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the infrared spectral characteristics of the thermistor are not flat enough, and the temperature change and the resistance change are not linear, it is difficult to accurately measure the infrared radiation power.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Example 1: Samples were prepared in a H44500-3 ultra-high vacuum coating machine, and the film was deposited on a common glass substrate. The purity of the matrix polycrystalline silicon germanium is 99.999%, and the atomic percentage of germanium is selected as 20%. Put the ordinary glass substrate into the ultra-high vacuum electron beam evaporation chamber, and wait until the background vacuum is better than 5×10 -5 After Pa, the molybdenum filament voltage was adjusted to 6V, the filament current was 4.2A, the electron beam current was 60mA, and the electron beam voltage was 7.5KV to conduct evaporation. When coating the film, choose the appropriate molybdenum filament voltage and the appropriate electron beam voltage to control the deposition speed of the film, so as to make the film deposition uniform. During film deposition, the substrate temperature is controlled at 300°C, the film thickness is between 1 μm and 2.5 μm, and the vacuum degree of the system is 5×1...

Embodiment 2

[0012] Example 2: Samples were prepared in a H44500-3 ultra-high vacuum coating machine, and the film was deposited on a common glass substrate. The purity of the host polycrystalline silicon germanium is 99.999%, and the atomic percentage of germanium is selected as 30%. Put the ordinary glass substrate into the ultra-high vacuum electron beam evaporation chamber, and wait until the background vacuum is better than 5×10 -5 After Pa, the molybdenum filament voltage was adjusted to 6.5V, the filament current was 4.5A, the electron beam current was 62mA, and the electron beam voltage was 7KV to conduct evaporation. When coating the film, choose the appropriate molybdenum filament voltage and the appropriate electron beam voltage to control the deposition speed of the film, so as to make the film deposition uniform. During film deposition, the substrate temperature is controlled at 300°C, the film thickness is between 1 μm and 2.5 μm, and the vacuum degree of the system is 5×10 ...

Embodiment 3

[0013] Example 3: Samples were prepared in a H44500-3 ultra-high vacuum coating machine, and the film was deposited on a common glass substrate. The purity of the host polycrystalline silicon germanium is 99.999%, and the atomic percentage of germanium is selected as 30%. Put the ordinary glass substrate into the high-vacuum electron beam evaporation chamber, and wait until the background vacuum is better than 5×10 -5 After Pa, the molybdenum filament voltage was adjusted to 7V, the filament current was 4.5A, the electron beam current was 62mA, and the electron beam voltage was 7.5KV to conduct evaporation. When coating the film, choose the appropriate molybdenum filament voltage and the appropriate electron beam voltage to control the deposition speed of the film, so as to make the film deposition uniform. During film deposition, the substrate temperature is controlled at 400°C, the film thickness is between 1 μm and 2.5 μm, and the vacuum degree of the system is 5×10 -4 Ab...

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Abstract

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.

Description

technical field [0001] The invention belongs to a preparation method of an infrared thermal detection material, in particular to a method for optimizing and modifying an amorphous SiGe alloy thin film. technical background [0002] The detection principle of infrared heat detection material is to use the heating effect of infrared radiation on the material, so as to change its electrical parameters, and realize photoelectric exchange by measuring the change of electrical parameters of the material. The amorphous SiGe alloy thin film has good application value as an infrared heat detection material. The amorphous SiGe alloy thin film is used as the material for the thermistor type uncooled infrared detector chip, and the most important thing is to have a high temperature coefficient of resistance (TCR). The reported α-SiGe thin film materials can only be formed from the gas phase, and the main methods used are sputtering, glow discharge, chemical vapor deposition and other m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/20
CPCY02P70/50
Inventor 杨宇王光科杨瑞东马铁英刘焕林陈刚
Owner YUNNAN UNIV
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