Method for preparing modified infrared detecting material - amorphous SiGe film
A thin film and modification technology, which is applied in the field of preparation of infrared thermal detection materials, can solve the problems of difficult to accurately measure infrared radiation power, and the infrared spectral characteristics of thermistors are not flat enough.
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Embodiment 1
[0011] Example 1: Samples were prepared in a H44500-3 ultra-high vacuum coating machine, and the film was deposited on a common glass substrate. The purity of the matrix polycrystalline silicon germanium is 99.999%, and the atomic percentage of germanium is selected as 20%. Put the ordinary glass substrate into the ultra-high vacuum electron beam evaporation chamber, and wait until the background vacuum is better than 5×10 -5 After Pa, the molybdenum filament voltage was adjusted to 6V, the filament current was 4.2A, the electron beam current was 60mA, and the electron beam voltage was 7.5KV to conduct evaporation. When coating the film, choose the appropriate molybdenum filament voltage and the appropriate electron beam voltage to control the deposition speed of the film, so as to make the film deposition uniform. During film deposition, the substrate temperature is controlled at 300°C, the film thickness is between 1 μm and 2.5 μm, and the vacuum degree of the system is 5×1...
Embodiment 2
[0012] Example 2: Samples were prepared in a H44500-3 ultra-high vacuum coating machine, and the film was deposited on a common glass substrate. The purity of the host polycrystalline silicon germanium is 99.999%, and the atomic percentage of germanium is selected as 30%. Put the ordinary glass substrate into the ultra-high vacuum electron beam evaporation chamber, and wait until the background vacuum is better than 5×10 -5 After Pa, the molybdenum filament voltage was adjusted to 6.5V, the filament current was 4.5A, the electron beam current was 62mA, and the electron beam voltage was 7KV to conduct evaporation. When coating the film, choose the appropriate molybdenum filament voltage and the appropriate electron beam voltage to control the deposition speed of the film, so as to make the film deposition uniform. During film deposition, the substrate temperature is controlled at 300°C, the film thickness is between 1 μm and 2.5 μm, and the vacuum degree of the system is 5×10 ...
Embodiment 3
[0013] Example 3: Samples were prepared in a H44500-3 ultra-high vacuum coating machine, and the film was deposited on a common glass substrate. The purity of the host polycrystalline silicon germanium is 99.999%, and the atomic percentage of germanium is selected as 30%. Put the ordinary glass substrate into the high-vacuum electron beam evaporation chamber, and wait until the background vacuum is better than 5×10 -5 After Pa, the molybdenum filament voltage was adjusted to 7V, the filament current was 4.5A, the electron beam current was 62mA, and the electron beam voltage was 7.5KV to conduct evaporation. When coating the film, choose the appropriate molybdenum filament voltage and the appropriate electron beam voltage to control the deposition speed of the film, so as to make the film deposition uniform. During film deposition, the substrate temperature is controlled at 400°C, the film thickness is between 1 μm and 2.5 μm, and the vacuum degree of the system is 5×10 -4 Ab...
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