Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of normal temperature NTC thermistor thin film and preparation method thereof

A technology of thermistor and thin film, which is applied in the field of normal temperature NTC thermistor thin film and its preparation, can solve the problems of affecting the performance of the thin film, reducing the TCR value, and cannot be directly applied to the field of infrared measurement, etc., and achieves a good crystallization state and a simple thin film Effect

Active Publication Date: 2022-03-01
SHANGHAI JIAO TONG UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

plus VO 2 The film itself has a phase change thermal hysteresis of about 3°C, so it cannot be directly applied to the field of infrared measurement
Although doping other metal elements can adjust the phase transition temperature and adjust the phase transition temperature close to room temperature, but at the same time it will greatly reduce the TCR value and affect the performance of the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of normal temperature NTC thermistor thin film and preparation method thereof
  • A kind of normal temperature NTC thermistor thin film and preparation method thereof
  • A kind of normal temperature NTC thermistor thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In this embodiment, an ordinary P-type (100) silicon wafer is used as a substrate, and an NTC film is prepared on its surface, such as figure 1 shown; the specific steps are as follows.

[0040] 1. Clean the substrate: soak the silicon wafer in dilute hydrochloric acid (10% HCL) for 5 minutes to remove metal ions. After rinsing, soak in acetone and isopropanol for 5 minutes to remove oil stains, then rinse and dry in a nitrogen oven.

[0041] 2. Equipment and target selection: The sputtering equipment is denton multi-target magnetron sputtering coating machine, the target is 3 inches in diameter, 5 mm thick, metal magnesium with a purity of 99.999% and vanadium pentoxide ceramic target with a purity of 99.999% .

[0042] 3. Thin film deposition: put the substrate on the water-cooled workpiece table, close the chamber, and pump the vacuum to 3*10 -4 After Pa, set the argon gas flow rate to 30 sccm, the working pressure to 0.6 pa, the magnesium target power to 100 W, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
phase transition temperatureaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a normal temperature NTC thermistor film and a preparation method thereof; the film is made of VO 2 , MgV 2 o 5 A glassy multi-hybrid material as the main component. During the preparation, the reducing metal target and the vanadium pentoxide target are co-sputtered to deposit the thin film on the substrate under high vacuum condition. In particular, the invention utilizes the excellent reduction performance of magnesium atoms to reduce the +5-valent vanadium in the vanadium pentoxide to reduce the +4-valent vanadium to prepare an NTC thin film. By changing the power applied to the magnesium target and the vanadium pentoxide target, the ratio of different components in the film can be adjusted, and at the same time, the thermal hysteresis of the film resistance, temperature rise and fall, and resistivity can also be adjusted. Compared with the traditional method for preparing NTC thin films, the preparation of thin films by the present invention is simpler, faster, more efficient, and compatible with various substrates; the prepared NTC thin films do not require high-temperature annealing, and have good crystallization conditions; and have a high temperature coefficient of resistance at room temperature , small thermal hysteresis width, low film resistivity, high material constant and so on.

Description

technical field [0001] The invention relates to the field of functional materials, in particular to a normal temperature NTC thermistor film and a preparation method thereof; especially to a VO 2 , MgV 2 o 5 A normal-temperature NTC thermistor film as a main component and a preparation method thereof. Background technique [0002] NTC thermistor is a thermistor with a negative temperature coefficient, and the resistance value characteristic is that it decreases with the increase of temperature. Since 1940, it has been found that some transition metal oxides are mixed according to a certain proportion, and after molding and sintering, semiconductors with a large negative temperature coefficient of resistance can be obtained. The temperature coefficient of resistance of such oxide semiconductors is - (1-6)% / °C range. [0003] In recent years, there are many studies on NTC materials, some with zinc oxide as the main material, and some with manganese oxide as the main mater...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04H01C17/12H01C17/14C23C14/10C23C14/35C23C14/46
CPCH01C7/047H01C7/043H01C17/12H01C17/14C23C14/10C23C14/352C23C14/46
Inventor 付学成程秀兰王英乌李瑛权雪玲
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com