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Low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and preparation method thereof

A thin film material, temperature coefficient technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of rare reports of vanadium trioxide thin film resistance temperature coefficient, achieve good thermal characteristics, eliminate Thermal hysteresis loop, effect of high temperature coefficient of resistance

Active Publication Date: 2014-01-29
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no report to eliminate the thermal hysteresis loop of vanadium trioxide thin film by doping
In addition, there are few reports on the research on the temperature coefficient of resistance in the low temperature region of the vanadium trioxide film.

Method used

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  • Low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and preparation method thereof
  • Low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and preparation method thereof
  • Low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0044] The substrate is plated with a layer of SiN x The Si sheet is used as the substrate, and the SiNx layer is mainly an insulating layer to avoid the leakage of the film in the electrical test, and is cleaned by standard ultrasonic cleaning with acetone, ethanol and deionized water. Using a multifunctional magnetron sputtering system, high-purity metal vanadium (purity: 99.99%), metal Ti (purity: 99.99%), and metal W (purity: 99.99%) are used as targets. The target diameter is 2 inches and the thickness is 5mm. , the background vacuum is 3×10 -5 Pa, the deposition temperature is 300-500°C, the Ar gas flow rate is 40 sccm, the sputtering power is 60w, 5w, 5w respectively, the sputtering time is 150min, and the oxygen flow rate is 0.4sccm (that is, the oxygen partial pressure is 1.0 %).

[0045] X-ray diffractometer analysis (XRD) was used to test the crystalline phase of the film as figure 1 As shown, the film exhibits V 2 o 3 Pure crystalline phase, no impurity phase ...

Embodiment 2

[0047] The steps of Example 1 were basically repeated, except that the sputtering powers of V, Ti, and W were 80W, 8W, and 10W, respectively, and the oxygen flow rate was 0.48 sccm, that is, the oxygen partial pressure was 1.2%. X-ray diffractometer analysis (XRD) test shows that the prepared film presents V 2 o 3 Pure crystalline phase, no impurity phase formation. From heating up to cooling down, the resistance temperature curve has no thermal hysteresis and no sudden change. In the low temperature range (80K-225K), it has a high temperature coefficient of resistance (-3% / K~-8% / K).

Embodiment 3

[0049] The steps of Example 1 were basically repeated, except that the sputtering powers of V, Ti, and W were 100 W, 10 W, and 15 W, respectively, and the oxygen flow rate was 0.6 sccm, that is, the oxygen partial pressure was 1.5%. X-ray diffractometer analysis (XRD) test shows that the prepared film presents V 2 o 3 Pure crystalline phase, no impurity phase formation. From heating up to cooling down, the resistance temperature curve has no thermal hysteresis and no sudden change. In the low temperature range (80K-225K), it has a high temperature coefficient of resistance (-3% / K~-8% / K).

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Abstract

The invention relates to a low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and a preparation method thereof. The thin-film material is a V2-x-yMxNyO3 thin film formed on a substrate by using metal vanadium, metal M and metal N as targets, argon serving as a sputtering gas and oxygen serving as a reactant gas and carrying out magnetron sputtering on the targets, wherein x and y are less than 0.2 and greater than 0, the doping element M is W, Mo, Mg, Sb, Bb and / or Al, and the doping element N is Ti, Cr and / or Zn; the thin-film material has a non-heat stagnation resistance-temperature loop in the range from 80K to 225K. The thin-film material is based on a low-cost vanadium trioxide-based thin-film material; the purpose of eliminating a heat stagnation loop of the V2O3 thin film is achieved by adjusting the doping content of the elements on the condition that the thermochromic properties of the thin film are unchanged; the low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material is expected to be applied to a katathermometer or low-temperature space infrared detection.

Description

technical field [0001] The invention relates to a low-temperature high-resistance temperature coefficient non-thermal hysteresis thin film material and a preparation method thereof, specifically refers to the preparation of a V 2-x-y m x N y o 3 (M is W, Mo, Mg, Sb, Nb, Al, etc., N is Ti, Cr, Zn, etc., x=0~0.2, y=0~0.2) thin film, which is expected to be used in high-sensitivity low-temperature thermometers or low-temperature spaces Infrared detection belongs to the field of new intelligent materials. Background technique [0002] Practical thermometers are also called electric thermometers, because this type of thermometer mainly uses the temperature relationship of the electrical properties of certain materials to measure temperature. Determining these temperature relationships is known as "temperature calibration". Due to the in-depth research on the resistivity-temperature relationship of metals, certain alloys and semiconductor materials, resistance thermometers ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
Inventor 金平实曹逊周怀娟姜萌罗宏杰
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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