A kind of vanadium dioxide film with high temperature coefficient of resistance and its low-temperature deposition method
A technology of vanadium dioxide and temperature coefficient, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the difficulty of controlling the composition of mixed vanadium oxide films, complex phase diagram of vanadium oxide polycrystalline films, The thin film preparation process is prone to impurity phase problems, to achieve the effect of improving the temperature coefficient of resistance, easy spontaneous crystallization, and eliminating thermal hysteresis loops
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Embodiment 1
[0052] (a) Vanadium trioxide (V 2 o 3 ) target compression: to analyze the pure V 2 o 3 Powder is the main raw material, put it into an automatic mortar and grind it fully for more than 12 hours; put the ground powder into a mold for pre-pressing, the shape is cylindrical, the diameter is 5cm, and the thickness is 0.5cm; it is pressed by cold isostatic pressing into V 2 o 3 Target material, pressure 260MPa, holding time 15min;
[0053] (b) W, Ti co-doped VO 2 Compression of target material: to analyze pure WO 3 、TiO 2 and VO 2 Nano powder is the main raw material, according to W 0.05 Ti 0.1 V 0.85 o 2 The stoichiometric ratio is weighed, mixed and put into an automatic mortar for full grinding for more than 12 hours; the ground powder is put into a mold, and hot-pressed and sintered through a hot-press furnace. The sintering temperature is 620°C and the pressure is 30MPa. The diameter is 5-5.2cm, and the thickness is 0.5cm;
[0054] (c) Preparation and cleaning o...
Embodiment 2
[0059] (a) Vanadium trioxide (V 2 o 3 ) The pressing of target material: with embodiment 1.
[0060] (b) W, Ti co-doped VO 2 Compression of target material: to analyze pure WO 3 、TiO 2 and VO 2 Nano powder is the main raw material, according to W 0.01 Ti 0.1 V 0.89 o 2 The stoichiometric ratio is weighed, mixed and put into an automatic mortar for full grinding for more than 12 hours; the ground powder is put into a mold, and hot-pressed and sintered through a hot-press furnace at a sintering temperature of 640 ° C and a pressure of 20 MPa. The diameter is 5-5.2cm, and the thickness is 0.5cm;
[0061] (c) Preparation and cleaning of the substrate: using SiN plated x The Si wafer used as the growth substrate was ultrasonically cleaned with organic solvents such as acetone and isopropanol in sequence for 5 minutes, and finally dried with a nitrogen gun;
[0062] (d)V 2 o 3 Growth of seed layer: using magnetron sputtering method, vacuum pumping to 1*10 -5 Pa, fill w...
Embodiment 3
[0066] (a) Vanadium trioxide (V 2 o 3 ) The pressing of target material: with embodiment 1.
[0067] (b) W, Ti co-doped VO 2 Compression of target material: to analyze pure WO 3 、TiO 2 and VO 2 Nano powder is the main raw material, according to W 0.01 Ti 0.1 V 0.89 o 2 The stoichiometric ratio is weighed, mixed and put into an automatic mortar for full grinding for more than 12 hours; the ground powder is put into a mold, and hot-pressed and sintered in a hot-press furnace at a sintering temperature of 600°C and a pressure of 40MPa. The diameter is 15cm, the thickness is 0.5cm;
[0068] (c) Preparation and cleaning of the substrate: using SiN plated x The Si wafer used as the growth substrate was ultrasonically cleaned with organic solvents such as acetone and isopropanol in sequence for 5 minutes, and finally dried with a nitrogen gun;
[0069] (d)V 2 o 3 Growth of seed layer: using magnetron sputtering method, vacuum pumping to 4*10 -5 Pa, fill with high-purity...
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