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Normal-temperature NTC thermistor film and preparation method thereof

A thermistor and film technology, applied in the field of NTC thermistor film and its preparation at room temperature, can solve the problems that cannot be directly applied to the field of infrared measurement, reduce the TCR value, affect the performance of the film, etc., and achieve good crystallization, simple film, The effect of high temperature coefficient of resistance

Active Publication Date: 2020-09-01
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

plus VO 2 The film itself has a phase change thermal hysteresis of about 3°C, so it cannot be directly applied to the field of infrared measurement
Although doping other metal elements can adjust the phase transition temperature and adjust the phase transition temperature close to room temperature, but at the same time it will greatly reduce the TCR value and affect the performance of the film

Method used

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  • Normal-temperature NTC thermistor film and preparation method thereof
  • Normal-temperature NTC thermistor film and preparation method thereof
  • Normal-temperature NTC thermistor film and preparation method thereof

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Embodiment 1

[0039] In this embodiment, an ordinary P-type (100) silicon wafer is used as a substrate, and an NTC film is prepared on its surface, such as figure 1 As shown; the specific steps are as follows.

[0040] 1. Cleaning the substrate: Soak the silicon wafer in dilute hydrochloric acid (10% HCL) for 5 minutes to remove metal ions. After rinsing, put them in acetone and isopropanol to soak for 5 minutes to remove oil stains, then rinse them and dry them in a nitrogen oven.

[0041] 2. Equipment and target selection: the sputtering equipment is a denton multi-target magnetron sputtering coating machine, the target is 3 inches in diameter, 5 mm in thickness, 99.999% purity of metallic magnesium and 99.999% purity of vanadium pentoxide ceramic target .

[0042] 3. Film deposition: Put the substrate on the water-cooled workpiece table, close the chamber, and pump the vacuum to 3*10 -4 After Pa, set the argon flow rate to 30 sccm, the working pressure to 0.6 pa, the magnesium target power to ...

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Abstract

The invention discloses a normal-temperature NTC thermistor film and a preparation method thereof. The film is a glassy state multi-mixed material taking VO2 and Mg2V2O5 as main components. During preparation, under a high vacuum condition, a reductive metal target and a vanadium pentoxide target are subjected to co-sputtering deposition on a substrate to form a thin film. According to the presentinvention, the NTC film is prepared by reducing + 5 valence vanadium in vanadium pentoxide into + 4 valence vanadium by particularly utilizing the excellent reducing property of magnesium atoms. By changing the power added to the magnesium target and the vanadium pentoxide target, the proportion of different components in the film is adjusted, and meanwhile, the temperature rising and falling hysteresis and resistivity of a film resistor can be adjusted. Compared with a traditional NTC film preparation method, the film preparation method of the present invention is simpler, faster and more efficient, and is compatible with various substrates. The prepared NTC film does not need the high-temperature annealing, is good in crystallization condition, and has the characteristics of high resistance temperature coefficient, small heat hysteresis width, low film resistivity, high material constant and the like at room temperature.

Description

Technical field [0001] The invention relates to the field of functional materials, in particular to a normal temperature NTC thermistor film and a preparation method thereof; in particular, it relates to a VO 2 , Mg 2 V 2 O 5 NTC thermistor film at room temperature as the main component and its preparation method. Background technique [0002] NTC thermistor is a thermistor with a negative temperature coefficient, and this resistance value characteristic is realized to decrease with the increase of temperature. Since 1940, it has been discovered that mixing certain transition metal oxides in a certain proportion, after molding and sintering, can obtain semiconductors with a large negative temperature coefficient of resistance. Such oxide semiconductors have a temperature coefficient of resistance of -(1-6)% / °C range. [0003] In recent years, there have been many researches on NTC materials, including zinc oxide as the main material and manganese oxide as the main material. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/04H01C17/12H01C17/14C23C14/10C23C14/35C23C14/46
CPCH01C7/047H01C7/043H01C17/12H01C17/14C23C14/10C23C14/352C23C14/46
Inventor 付学成程秀兰王英乌李瑛权雪玲
Owner SHANGHAI JIAO TONG UNIV
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